NJRC NJG1107KB2

NJG1107KB2
1.5/1.9GHz LNA GaAs MMIC
nGENERAL DESCRIPTION
NJG1107KB2 is a Low Noise Amplifier GaAs MMIC
designed for 1.5GHz and 1.9GHz band digital cellular phone
and Japanese PHS handsets. This amplifier provides low
noise figure, high gain and high IP3 operated by single low
positive power supply.
This amplifier includes internal self-bias circuit and input
DC blocking capacitor.
An ultra small and thin package of FLP6 is adopted.
nFEATURES
lLow voltage operation
lLow current consumption
lHigh small signal gain
nPACKAGE OUTLINE
NJG1107KB2
+2.7V typ.
3.0mA typ.
17dB typ. @f=1.49GHz
15dB typ. @f=1.96GHz
1.2dB typ. @f=1.49GHz
1.2dB typ. @f=1.96GHz
-4.0dBm typ. @f=1.4900+1.4901GHz
-2.0dBm typ. @f=1.9600+1.9601GHz
FLP6-B2 (Mount Size: 2.1x2.0x0.75mm)
lLow noise figure
lHigh Input IP3
lUltra small & ultra thin package
l This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band)
nPIN CONFIGURATION
KB2 Type
(Top View)
4
5
6
3
AMP
2
PIN Connection
1.RFout
2.GND
3.EXTCAP
4.GND
5.GND
6.RFin
1
Orientation Mark
Note: Specifications and description listed in this catalog are subject to change without prior notice.
-1-
NJG1107KB2
nABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain Voltage
Input Power
VDD
Pin
Power Dissipation
Operating Temp.
Storage Temp.
(Ta=+25°C, Zs=Zl=50Ω)
RATINGS
UNIT
CONDITIONS
6.0
+15
V
dBm
PD
Topr
450
-40~+85
mW
°C
Tstg
-55~+125
°C
VDD=2.7V
nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band)
(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
Drain Voltage
freq1
VDD
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB Gain
Compression point
Input 3rd Order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
IDD
Gain
Gflat
NF
RF OFF
f=1.47~1.51GHz
P-1dB
IIP3
f=1.49+1.4901GHz
RFin=-35dBm
VSWRi
1.47
2.5
1.49
2.7
1.51
5.5
GHz
V
15.0
-
3.0
17.0
0.5
1.2
3.8
19.0
1.0
1.4
mA
dB
dB
dB
-6.0
-2.0
-
dBm
-6.0
-4.0
-
dBm
-
1.6
2.2
1.6
2.2
VSWRo
nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band)
(VDD=2.7V, f=1.96GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq2
1.89
1.96
1.99
GHz
Drain Voltage
Operating Current
Small Signal Gain
Gain Flatness
Noise Figure
Pout at 1dB Gain
Compression point
Input 3rd order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
-2-
VDD
IDD
Gain
Gflat
2.5
13.0
-
2.7
3.0
15.0
0.5
5.5
3.8
17.0
1.0
V
mA
dB
dB
NF
-
1.2
1.4
dB
P-1dB
-3.0
+1.0
-
dBm
-6.0
-2.0
-
dBm
VSWRi
-
1.6
2.2
VSWRo
-
1.6
2.2
IIP3
RF OFF
f=1.89~1.99GHz
f=1.96+1.9601GHz
RFin=-30dBm
NJG1107KB2
nELECTRICAL CHARACTERISTICS 3 (1.8GHz Band)
(VDD=2.7V, f=1.76GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
Drain Voltage
freq3
VDD
1.75
2.5
1.76
2.7
1.78
5.5
GHz
V
Operating Current
Small Signal Gain
IDD
Gain
RF OFF
-
3.0
16.0
3.8
-
mA
dB
Gain Flatness
Noise Figure
Pout at 1dB
Compression point
Input 3rd order
Intercept Point
RF Input Port
VSWR
RF Output Port
VSWR
Gflat
NF
f=1.75~1.78GHz
-
0.5
1.2
-
dB
dB
-
1.1
-
dBm
-
-2.0
-
dBm
VSWRi
-
1.6
-
-
VSWRo
-
1.6
-
-
P-1dB
IIP3
f=1.76+1.7601GHz
RFin=-35dBm
nELECTRICAL CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version)
(VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT2)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Operating Frequency
freq4
1.47
1.49
1.51
GHz
Drain Voltage
VDD
2.5
2.7
5.5
V
Operating Current
IDD
RF OFF
3.0
3.8
mA
Small Signal Gain
Gain
14.0
dB
Gain Flatness
Gflat
f=1.47~1.51GHz
0.5
dB
Noise Figure
NF
1.2
dB
Pout at 1dB
P-1dB
0.0
dBm
Compression point
f=1.49+1.4901GHz
Input 3rd order
IIP3
-3.0
dBm
Intercept Point
RFin=-35dBm
RF Input Port
VSWRi
1.6
VSWR
RF Output Port
VSWRo
1.6
VSWR
-3-
NJG1107KB2
nPIN CONFIGURATION
Pin
1
Function
RFout
2,4,5 GND
3
EXTCAP
6
RFin
-4-
Description
RF output and voltage supply pin. External matching circuits and a bypass capacitor
is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These
elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer
to “TEST CIRCUIT”)
Ground pin. To keep good RF grounding performance, please use multiple via holes
to connect with ground plane and this pin.
An external bypass capacitor is required. (Please refer to “TEST CIRCUIT”)
RF input pin. A DC blocking capacitor is not required. An external matching circuit is
required. (Please refer to “TEST CIRCUIT”)
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band)
NF,Gain vs. frequency
S21,S11,S22,S12 vs. frequency
DD
2.6
DD
20
25
20
8
1.4
S21,S11,S22 (dB)
NF (dB)
12
1.8
Gain (dB)
16
2.2
=2.7V,I =3mA)
DD
4
50
40
S21
15
30
10
20
10
5
S11
0
0
-10
-5
-10
1
DD
-15
-20
S22
-30
S12
-40
-20
0
0.6
1.4
1.44
1.48
1.52
frequency (GHz)
1.56
-50
-25
0.5
1.6
1
(V
(V =2.7V,f=1.49GHz)
DD
10
10
5
0
-5
-10
-10
-15
-20
-30
-30
-20
Pin (dBm)
Gain vs. V
2
2.5
-10
=2.7V,I =3mA,f=1.49+1.4901GHz)
DD
DD
Pout
-10
Pout,IM3 (dBm)
Pout (dBm)
10
0
P-1dB
+1.17dBm
-40
1.5
frequency (GHz)
Pout, IM3 vs. Pin
Pout vs. Pin
0
S12 (dB)
(V
(V =2.7V,I =3mA)
-20
-30
-40
IM3
-50
-20
-60
-25
-70
-30
-80
-40
0
IIP3
-3.15dBm
-30
-20
-10
0
Pin (dBm)
NF, I
DD
(f=1.49GHz)
19
18.5
DD
vs. V
DD
(f=1.49GHz)
1.3
3.4
1.2
3.3
1.1
3.2
1
3.1
17.5
17
0.9
16.5
16
2.5
3
0.8
3
3.5
4
VDD (V)
4.5
5
5.5
2.9
2.5
3
3.5
4
VDD (V)
4.5
5
5.5
-5-
IDD (mA)
NF (dB)
Gain (dB)
18
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band)
P-1dB vs. V
IIP3, OIP3 vs. V
DD
(f=1.49GHz)
DD
(f=1.49+1.4901GHz, Pin=-35dBm)
8
5
20
4
19
3
18
2
17
1
16
IIP3 (dBm)
2
0
-2
-4
-6
15
14
-2
13
-3
12
-4
11
10
-5
3
3.5
4
V
4.5
DD
Gain, I
DD
5
5.5
3
3.5
4
V
(V)
DD
4.5
5
5.5
(V)
NF, P-1dB vs. Temperature
vs. Temperature
(VDD=2.7V, f=1.49GHz)
20
3.25
(V DD=2.7V, f=1.49GHz)
2.4
NF (dB)
2.75
18
2
1
1.6
0
1.2
-1
0.8
-2
2.5
17
-20
0
20
40
60
80
2.25
100
0.4
-40
-20
0
20
40
60
80
-3
100
Temperature ( oC )
Temperature ( oC)
IIP3, OIP3 vs. Temperature
(V =2.7V, f=1.49+1.4901GHz, Pin=-35dBm)
DD
21
-1
20
-2
19
-3
18
-4
17
-5
16
-6
15
-7
14
-20
0
20
40
Temperature ( oC)
-6-
60
80
13
100
OIP3 (dBm)
IIP3 (dBm)
0
-8
-40
2
3
19
16
-40
2.5
IDD (mA)
2.5
Gain (dB)
0
-1
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
@ Pin=-35dBm
IIP3 = OIP3 - Gain
P-1dB (dBm)
P-1dB (dBm)
4
OIP3 (dBm)
6
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band)
S11 vs. frequency ( to 20GHz)
(V
(V
DD
25
20
20
15
15
10
10
S22 (dB)
S11 (dB)
25
S22 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
5
0
0
-5
-5
-10
-15
-15
-20
-20
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
S21 vs. frequency ( to 20GHz)
(V
25
4
6
8
10 12 14
frequency (GHz)
16
18
20
S12 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
(V
DD
25
20
20
15
15
10
10
S12 (dB)
S21 (dB)
DD
5
-10
-25
=2.7V,I =3mA)
DD
5
0
DD
5
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
=2.7V,I =3mA)
DD
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
-7-
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.9GHz Band)
NF,Gain vs. frequency
S21,S11,S22,S12 vs. frequency
2.6
20
25
20
NF (dB)
8
1.4
S21,S11,S22 (dB)
12
1.8
Gain (dB)
16
2.2
=2.7V,I =3mA)
DD
DD
50
40
S21
15
30
10
20
10
5
S22
0
0
-10
-5
-20
-10
4
1
S11
-15
0
1.8
1.84
1.88
1.92
frequency (GHz)
1.96
-30
S12
-20
0.6
S12 (dB)
(V
(VDD=2.7V,IDD=3mA)
-40
-50
-25
2
1
1.5
2
frequency (GHz)
2.5
3
Pout, IM3 vs. Pin
Pout vs. Pin
(V =2.7V,f=1.96GHz)
(V
DD
10
10
0
=2.7V,I =3mA,f=1.96+1.9601GHz)
DD
DD
Pout
-10
P-1dB
+1.17dBm
-20
Pout,IM3 (dBm)
Pout (dBm)
0
-10
-30
-40
IM3
-50
-60
-20
IIP3
-70
-2.21dBm
-80
-90
-40
-30
-40
-30
-20
Pin (dBm)
Gain vs. V
-10
0
-30
-20
-10
0
Pin (dBm)
DD
NF, I
(f=1.96GHz)
17
16.5
DD
vs. V
DD
(f=1.96GHz)
1.3
3.4
1.2
3.3
1.1
3.2
1
3.1
15
0.9
14.5
14
2.5
3.5
4
V
DD
-8-
3
0.8
3
4.5
(V)
5
5.5
(mA)
DD
15.5
I
NF (dB)
Gain (dB)
16
2.9
2.5
3
3.5
4
V (V)
DD
4.5
5
5.5
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.9GHz Band)
IIP3, OIP3 vs. V
DD
8
6
IIP3 (dBm)
2
0
-2
-4
6
20
5
19
4
18
3
17
2
16
1
15
0
14
-1
13
-2
12
-3
11
10
-4
-6
2.5
3
3.5
4
V
4.5
DD
Gain, I
DD
5
3
3.5
4
4.5
VDD (V)
(V)
vs. Temperature
(V
18
5
5.5
NF, P-1dB vs. Temperature
(V
=2.7V, f=1.96GHz)
DD
3.25
=2.7V, f=1.96GHz)
DD
2.4
2
2
1
1.6
0
1.2
-1
0.8
-2
NF (dB)
2.75
16
IDD (mA)
3
17
2.5
15
14
-40
2.5
5.5
-20
0
20
40
60
80
0.4
2.25
100
-40
Temperature ( oC)
-20
0
20
40
60
80
-3
100
Temperature ( oC )
IIP3, OIP3 vs. Temperature
(V =2.7V, f=1.96+1.9601GHz, Pin=-30dBm)
DD
20
0
19
-1
18
-2
17
-3
16
-4
15
-5
14
-6
13
-7
-40
-20
0
20
40
60
80
12
100
OIP3 (dBm)
IIP3 (dBm)
1
Equations of OIP3 and IIP3
3 × Pout - IM3
OIP3 =
2
@ Pin=-30dBm
IIP3 = OIP3 - Gain
Temperature ( oC)
-9-
P-1dB (dB)
P-1dB (dBm)
4
Gain (dB)
DD
(f=1.96+1.9601GHz, Pin=-30dBm)
(f=1.96GHz)
OIP3 (dBm)
P-1dB vs. V
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.9GHz Band)
S11 vs. frequency ( to 20GHz)
(V
(V
DD
25
20
20
15
15
10
10
S22 (dB)
S11 (dB)
25
S22 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
5
0
0
-5
-5
-10
-15
-15
-20
-20
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
S21 vs. frequency ( to 20GHz)
(V
4
6
8
10 12 14
frequency (GHz)
16
18
20
S12 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
(V
DD
25
20
20
15
15
10
10
S12 (dB)
S21 (dB)
25
5
0
=2.7V,I =3mA)
DD
DD
5
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
-25
0
- 10 -
DD
5
-10
-25
=2.7V,I =3mA)
DD
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.8GHz Band)
NF,Gain vs. frequency
S21,S11,S22,S12 vs. frequency
DD
(V
DD
20
2.6
25
20
NF (dB)
8
1.4
S21,S11,S22 (dB)
12
1.8
Gain (dB)
16
2.2
=2.7V,I =3mA)
DD
4
1.7
1.75
frequency (GHz)
1.8
40
15
30
10
20
10
5
S22
0
0
-10
-5
-20
S11
-30
-15
-20
0.6
1.65
50
S21
-10
1
DD
0
1.85
-40
S12
-50
-25
1
1.5
2
frequency (GHz)
2.5
3
Pout, IM3 vs. Pin
Pout vs. Pin
(V =2.7V,f=1.76GHz)
(V
DD
10
10
0
=2.7V,I =3mA,f=1.76+1.7601GHz)
DD
DD
Pout
-10
P-1dB
+1.14dBm
-20
Pout,IM3 (dBm)
Pout (dBm)
0
-10
-30
-40
IM3
-50
-60
-20
IIP3
-70
-2.01dBm
-80
-30
-40
-30
-20
Pin (dBm)
-10
0
-90
-40
-30
-20
-10
0
Pin (dBm)
- 11 -
S12 (dB)
(V =2.7V,I =3mA)
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.8GHz Band)
S11 vs. frequency ( to 20GHz)
(V
(V
DD
25
50
40
15
15
30
10
10
20
5
10
0
0
5
0
-5
-5
-10
-10
-10
-20
-15
-15
-30
-20
-20
-40
-50
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
S21 vs. frequency ( to 20GHz)
(V
DD
20
15
30
15
10
20
10
5
10
0
0
S12 (dB)
40
-5
-10
-20
-10
-15
-30
-15
-20
-40
-20
-50
-25
-25
8
10 12 14
frequency (GHz)
16
18
20
18
20
=2.7V,I =3mA)
DD
DD
0
-10
6
16
5
-5
4
8
10 12 14
frequency (GHz)
(V
DD
20
2
6
S12 vs. frequency ( to 20GHz)
25
0
4
=2.7V,I =3mA)
50
25
S21 (dB)
DD
20
-25
- 12 -
=2.7V,I =3mA)
DD
20
S22 (dB)
S11 (dB)
25
S22 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
NF,Gain vs. frequency
S21,S11,S22,S12 vs. frequency
DD
2.6
DD
20
25
16
1.8
12
8
1.4
S21,S11,S22 (dB)
2.2
Gain (dB)
NF (dB)
20
4
DD
50
40
S21
15
30
10
20
5
10
S22
0
0
-10
-5
-10
1
=2.7V,I =3mA)
DD
-20
S11
-15
-30
S12
-40
-20
0
0.6
1.4
1.44
1.48
1.52
frequency (GHz)
1.56
-50
-25
0.5
1.6
1
1.5
frequency (GHz)
2
2.5
Pout, IM3 vs. Pin
Pout vs. Pin
(V
(V =2.7V,f=1.49GHz)
DD
10
10
0
5
=2.7V,I =3mA,f=1.49+1.4901GHz)
DD
DD
Pout
-10
0
P-1dB
+0.00dBm
-5
Pout,IM3 (dBm)
Pout (dBm)
S12 (dB)
(V
(V =2.7V,I =3mA)
-10
-15
-20
-30
-40
IM3
-50
-20
-60
-25
-70
-30
-40
-35
-30
-25
-20
-15
Pin (dBm)
-10
-5
0
-80
-40
IIP3
-2.89dBm
-35
-30
-25
-20
-15
-10
-5
0
Pin (dBm)
- 13 -
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
S11 vs. frequency ( to 20GHz)
(V
(V
DD
25
20
20
15
15
10
10
S22 (dB)
S11 (dB)
25
S22 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
DD
5
0
0
-5
-5
-10
-15
-15
-20
-20
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
S21 vs. frequency ( to 20GHz)
(V
25
4
6
DD
8
10 12 14
frequency (GHz)
16
18
20
S12 vs. frequency ( to 20GHz)
=2.7V,I =3mA)
(V
DD
25
20
20
15
15
10
10
S12 (dB)
S21 (dB)
DD
5
-10
-25
=2.7V,I =3mA)
DD
5
0
DD
5
0
-5
-5
-10
-10
-15
-15
-20
-20
-25
=2.7V,I =3mA)
DD
-25
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
0
2
4
6
8
10 12 14
frequency (GHz)
16
18
20
- 14 -
NJG1107KB2
nTYPICAL CHARACTERISTICS
Scattering Parameter Table
VDD=2.7V, IDD=3mA, Zo=50Ω
S11
S21
Freq
mag
ang
mag
ang
(GHz)
(units)
(deg)
(units)
(deg)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
1.000
0.986
0.986
0.972
0.965
0.957
0.943
0.929
0.910
0.903
0.894
0.879
0.864
0.852
0.843
0.826
0.818
0.810
0.801
0.794
0.783
0.782
0.770
0.772
0.760
0.761
0.757
0.756
0.757
0.752
-3.130
-4.217
-6.161
-8.026
-10.209
-12.032
-13.490
-15.249
-16.014
-16.960
-18.131
-18.645
-19.500
-21.338
-22.810
-24.483
-24.447
-26.509
-27.539
-29.642
-30.807
-33.473
-34.972
-35.870
-37.091
-38.975
-40.916
-41.260
-42.651
-42.892
2.094
2.074
2.046
2.012
1.991
1.943
1.909
1.851
1.793
1.765
1.710
1.673
1.636
1.627
1.578
1.541
1.513
1.503
1.489
1.452
1.453
1.421
1.426
1.391
1.397
1.376
1.359
1.322
1.294
1.267
S12
mag
(units)
176.987
171.002
165.318
159.545
153.712
147.933
143.180
138.232
133.807
129.856
125.443
121.935
118.442
114.415
110.659
107.013
104.077
100.734
97.286
93.725
90.359
86.597
83.223
79.970
76.578
73.069
68.921
65.450
62.030
58.521
4
0.012
0.002
0.007
0.003
0.005
0.004
0.005
0.008
0.006
0.009
0.009
0.010
0.011
0.012
0.014
0.014
0.015
0.016
0.018
0.019
0.020
0.022
0.022
0.026
0.027
0.030
0.031
0.034
0.035
0.036
S22
ang
(deg)
mag
(units)
-25.995
110.707
92.945
62.606
103.324
96.002
75.842
90.203
93.660
85.810
95.094
92.781
91.381
100.617
99.522
99.175
100.001
103.271
106.687
108.548
106.305
107.071
107.349
109.866
112.983
109.600
106.376
109.318
106.983
108.989
0.965
0.967
0.962
0.960
0.961
0.953
0.949
0.940
0.931
0.928
0.931
0.921
0.919
0.919
0.918
0.914
0.918
0.925
0.920
0.921
0.924
0.922
0.920
0.919
0.914
0.920
0.907
0.902
0.893
0.879
ang
(deg)
-1.855
-1.782
-3.088
-3.801
-5.113
-6.159
-7.623
-9.144
-9.943
-10.876
-12.170
-13.089
-14.156
-14.843
-16.259
-17.088
-18.228
-19.508
-20.507
-21.024
-22.491
-24.160
-25.779
-27.462
-29.724
-32.086
-35.211
-38.255
-41.787
-45.326
3
1000pF
S11
5
2
6
1
Ref.
S22
Ref.
Scattering Parameter
Measurement Circuit
- 15 -
NJG1107KB2
nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version)
Scattering Parameter Table
VDD=2.7V, IDD=3mA, Zo=50Ω
S11
S21
S12
Freq
mag
ang
mag
ang
mag
ang
(GHz)
(units)
(deg)
(units)
(deg)
(units)
(deg)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
1.011
1.023
1.027
1.036
1.029
1.027
1.007
0.996
0.978
0.961
0.940
0.923
0.905
0.889
0.877
0.860
0.849
0.834
0.822
0.814
0.801
0.791
0.784
0.773
0.766
0.756
0.753
0.748
0.745
0.744
-1.815
-4.177
-6.876
-10.171
-13.604
-17.041
-20.090
-22.496
-25.098
-27.178
-28.800
-30.761
-32.462
-33.815
-34.976
-36.777
-37.774
-39.260
-40.858
-42.312
-43.887
-45.820
-47.584
-49.825
-51.948
-54.101
-56.479
-59.220
-61.715
-64.848
0.619
1.049
1.402
1.681
1.843
1.967
1.997
1.994
1.967
1.925
1.857
1.825
1.785
1.719
1.679
1.610
1.568
1.534
1.490
1.464
1.435
1.393
1.365
1.332
1.311
1.285
1.260
1.229
1.213
1.189
4
-137.421
-141.929
-152.156
-164.509
-176.486
172.550
162.037
153.204
144.936
137.106
131.070
124.735
118.431
113.194
107.647
102.741
98.621
94.075
89.890
85.613
81.588
77.520
73.663
69.756
66.211
62.518
58.997
55.237
51.930
48.547
0.006
0.005
0.004
0.008
0.006
0.006
0.010
0.009
0.009
0.008
0.010
0.012
0.011
0.010
0.014
0.014
0.014
0.015
0.015
0.017
0.017
0.021
0.019
0.021
0.024
0.025
0.028
0.029
0.031
0.031
150.071
111.664
72.732
71.899
80.582
96.630
79.136
78.039
80.635
73.136
71.678
76.438
77.174
78.254
83.456
73.747
80.053
85.009
83.753
88.727
92.695
98.708
95.532
93.049
93.358
97.398
99.809
93.593
100.273
97.032
3
10pF
S11
5
2
6
1
Ref.
S22
Ref.
Scattering Parameter
Measurement Circuit
- 16 -
S22
mag
(units)
0.998
0.996
0.999
0.995
0.993
0.982
0.983
0.976
0.967
0.967
0.961
0.954
0.948
0.946
0.947
0.947
0.942
0.938
0.939
0.939
0.938
0.939
0.936
0.937
0.940
0.942
0.946
0.949
0.947
0.950
ang
(deg)
-1.269
-3.638
-4.808
-6.754
-8.514
-9.913
-12.453
-14.051
-15.603
-17.199
-17.813
-19.024
-21.016
-22.555
-24.779
-26.267
-27.354
-28.669
-29.677
-31.456
-32.776
-34.232
-35.915
-36.454
-38.089
-39.619
-40.798
-42.180
-43.117
-44.659
NJG1107KB2
nTEST CIRCUIT 1 (1.5/1.8/1.9GHz Band)
(Top View)
GND
EXTCAP
4
3
C3
GND
RF Input
5
AMP
2
GND
L4
L2
6
C1
1
L3
RF Output
VDD=2.7V
L1
C2
nTEST CIRCUIT 2 (1.5GHz Band, Low Gain Version)
(Top View)
GND
3
4
EXTCAP
C3
GND
RF Input
L1
5
AMP
2
GND
R1
L2
6
C1
1
L3
RF Output
VDD=2.7V
C2
- 17 -
NJG1107KB2
nRECOMMENDED PCB DESIGN
(Top View)
(Top View)
C3
C3
NJG1107
L2
RF IN
L4 L3 C1
L1
L2
RF OUT
RF IN
L1
NJG1107
L3 C1
R1
RF OUT
C2
C2
1.5/1.8/1.9GHz Band
1.5GHz Band, Low Gain Version
PCB: FR4 t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω)
PCB SIZE: 14.0 x 14.0mm
Parts List
Parts ID
- 18 -
Constant
1.9GHz
1.8GHz
Band
Band
5.6nH
6.8nH
Comment
1.5GHzBand
Low Gain
10nH
TAIYO-YUDEN HK1005 Series
L1
1.5GHz
Band
10nH
L2
12nH
5.6nH
8.2nH
12nH
TAIYO-YUDEN HK1005 Series
L3
5.6nH
3.9nH
6.8nH
6.8nH
TAIYO-YUDEN HK1005 Series
L4
15nH
10nH
12nH
-
C1
5pF
13pF
30pF
0.75pF
TAIYO-YUDEN HK1005 Series
MURATA GRM36 Series
C2
1000pF
1000pF
1000pF
1000pF
MURATA GRM36 Series
C3
1000pF
1000pF
1000pF
10pF
MURATA GRM36 Series
R1
-
-
-
36Ω
NJG1107KB2
nPACKAGE OUTLINE (FLP6-B2)
0.75±0.05
2.0±0.1
5
+0.1
0.15-0.05
4
2.1±0.1
0.2
1.7±0.1
0.2
6
1
2
3
0.65
0.1
0.1
0.65
Lead material
: Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT
: mm
Weight
: 6.5mg
+0.1
0.2-0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 19 -