NTE188 (NPN) & NTE189 (PNP) Silicon Complementary Transistors High Voltage Amplifier & Driver Description: The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type package designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 2 80 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4 – – V VCB = 80V, IE = 0 – – 100 nA VCB = 60V, IE = 0 – – 100 nA Collector Cutoff Current NTE188 NTE189 ICBO Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit IC = 50mA, VCE = 1V 60 110 – IC = 250mA, VCE = 1V 30 65 – IC = 50mA, VCE = 1V – 33 – IC = 50mA, VCE = 1V 80 160 – IC = 50mA, VCE = 1V 50 130 – IC = 50mA, VCE = 1V – 8 – IC = 250mA, IB = 10mA – 0.18 0.4 V IC = 250mA, IB = 25mA – 0.1 – V IC = 250mA, IB = 10mA – 0.22 0.5 V IC = 250mA, IB = 25mA – 0.15 – V IC = 250mA, VCE = 5V – 0.76 1.2 V – 0.78 1.2 V IC = 250mA, VCE = 5V, f = 100MHz, Note 2 50 150 – MHz 50 100 – MHz VCB = 10V, IE = 0, f = 100MHz – 6 12 pF – 10 15 pF OFF Characteristics (Note 3) DC Current Gain NTE188 hFE NTE189 Collector–Emitter Saturation Voltage NTE188 VCE(sat) NTE189 Base–Emitter ON Voltage NTE188 VBE(on) NTE189 Small–Signal Characteristics Current Gain–Bandwidth Product NTE188 fT NTE189 Output Capacitance NTE188 Cob NTE189 Note 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) E B C .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab