189

NTE188 (NPN) & NTE189 (PNP)
Silicon Complementary Transistors
High Voltage Amplifier & Driver
Description:
The NTE188 (NPN) and NTE189 (PNP) are complementary silicon transistors in a TO202N type
package designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector−Emitter Breakdown Voltage: V(BR)CEO = 80V @ IC = 1mA
D High Power Dissipation: PD = 10W @ TC = +25°C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector−Base Voiltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W
Note 1. NTE188 is a discontinued device and is no longer available.
Note 2. RthJA is measured with the device soldered into a typical printed circuit board.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 3
80
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 100μA, IC = 0
4
−
−
V
VCB = 80V, IE = 0
−
−
100
nA
VCB = 60V, IE = 0
−
−
100
nA
Collector Cutoff Current
NTE188
NTE189
ICBO
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 50mA, VCE = 1V
60
110
−
IC = 250mA, VCE = 1V
30
65
−
IC = 50mA, VCE = 1V
−
33
−
IC = 50mA, VCE = 1V
80
160
−
IC = 250mA, VCE = 1V
50
130
−
IC = 50mA, VCE = 1V
−
8
−
IC = 250mA, IB = 10mA
−
0.18
0.4
V
IC = 250mA, IB = 25mA
−
0.1
−
V
IC = 250mA, IB = 10mA
−
0.22
0.5
V
IC = 250mA, IB = 25mA
−
0.15
−
V
IC = 250mA, VCE = 5V
−
0.76
1.2
V
−
0.78
1.2
V
IC = 250mA, VCE = 5V, f = 100MHz,
Note 2
50
150
−
MHz
50
100
−
MHz
VCB = 10V, IE = 0, f = 100MHz
−
6
12
pF
−
10
15
pF
OFF Characteristics (Note 3)
DC Current Gain
NTE188
hFE
NTE189
Collector−Emitter Saturation Voltage
NTE188
VCE(sat)
NTE189
Base−Emitter ON Voltage
NTE188
VBE(on)
NTE189
Small−Signal Characteristics
Current Gain−Bandwidth Product
NTE188
fT
NTE189
Output Capacitance
NTE188
Cob
NTE189
Note 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
.380 (9.65) Max
.050 (1.27)
.160
(4.06)
.280 (7.25) Max
.128 (3.28) Dia
.100 (2.54)
.218
(5.55)
E B C
.995
(25.3)
.475
(12.0)
Min
.100 (2.54)
.200 (5.08)
Collector Connected to Tab