NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation @ TA = +25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/°C Total Device Dissipation @ TC = +25°C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200°C/mW Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3°C/mW Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 1 300 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 300 – – V Emitter–Base Breakdown Voltage NTE287 V(BR)EBO 6 – – V 5 – – V – – 0.1 µA – – 0.25 µA VEB = 6V, IC = 0 – – 0.1 µA VEB = 3V, IC = 0 – – 0.1 µA IE = 100µA, IC = 0 NTE288 Collector Cutoff Current NTE287 ICBO VCB = 200V, IE = 0 NTE288 Emitter Cutoff Current NTE287 NTE288 IEBO Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288 hFE NTE287 IC = 1mA, VCE = 10V 25 – – IC = 10mA, VCE = 10V 40 – – IC = 30mA, VCE = 10V 40 – – 25 – – NTE288 Collector–Emitter Saturation Voltage VCE(sat) IC = 20mA, IB = 2mA – – 0.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 20mA, IB = 2mA – – 0.9 V IC = 10mA, VCE = 20V, f = 100MHz 50 – – MHz VCB = 20V, IE = 0, f = 1MHz – – 3 pF – – 6 pF Small–Signal Characteristics Current Gain – Bandwidth Product Collector–Base Capacitance NTE287 fT Ccb NTE288 Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min E B C .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max