NTE216 Silicon NPN Transistor High Speed Switch, Core Driver Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Maximum Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit µA Collector Cutoff Current ICBO VCB = 60V – – 1.7 DC Current Gain hFE IC = 10mA, VCE = 1V 30 – – IC = 150mA, VCE = 1V 60 – 150 IC = 300mA, VCE = 1V 40 – – IC = 500mA, VCE = 1V 35 – – IC = 800mA, VCE = 2V 20 – – IC = 1A, VCE = 5V 25 – – Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA – – 0.25 V Base–Emitter Saturation Voltage VBE(sat) IC = 10mA – – 0.76 V – – 10 pF – – 60 ns Capacitance Cob Turn–Off Time toff VCC = 30V, IC = 500mA, IB1 = IB2 = 50mA .200 (5.08) .180 (4.57) .100 (2.54) E B C .180 (4.57) .594 (15.09) .018 (0.46) .015 (0.38) 3.050 (1.27) .050 (1.27) .050 (1.27) .140 (3.55) .090 (2.28) R