NTE2320 Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair) Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation (TA = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.18mW/°C Total Device Dissipation (TA = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 1.25W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C Total Device Dissipation (TC = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Total Device Dissipation (TC = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 3.0W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Reistance, Junction–to–Ambient, RthJA Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193°C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W Thermal Reistance, Junction–to–Case, RthJC Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6°C/W Coupling Factors, Junction–to–Ambient Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60% Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24% Coupling Factors, Junction–to–Case Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30% Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20% Note 1. Voltage and current are negative for PNP transistors. Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 2 30 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 30 nA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 – – 30 nA hFE VCE = 10V, IC = 1mA 50 – – VCE = 10V, IC = 10mA 75 – – VCE = 10V, IC = 150mA 100 – – VCE = 10V, IC = 300mA 20 – – IC = 150mA, IB = 15mA – – 0.4 V IC = 300mA, IB = 30mA – – 01.4 V IC = 150mA, IB = 15mA – – 1.3 V IC = 300mA, IB = 30mA – – 2.0 V 200 350 – MHz – 6.0 8.0 pF – 4.5 8.0 pF – 20 30 pF – 17 30 pF ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance NPN fT Cobo VCE = 20V, IC = 50mA, f = 100MHz, Note 3 VCB = 10V, IE = 0, f = 1MHz PNP Input Capacitance NPN Cibo VEB = 2V, IC = 0, f = 1MHz PNP Switching Characteristics Turn–On Time ton VCC = 30V, VEB = 0.5V, IC = 150mA, IB1 = 15mA – 30 – ns Turn–Off Time toff VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA – 225 – ns Note 1. Voltage and current are negative for PNP transistors. Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Pin Connection Diagram Q1 (NPN) Collector 1 14 Q4 (NPN) Collector Q1 (NPN) Base 2 13 Q4 (NPN) Base Q1 (NPN) Emitter 3 12 Q4 (NPN) Emitter N.C. 4 11 Q2 (PNP) Emitter 5 10 Q3 (PNP) Emitter Q2 (PNP) Base 6 9 Q3 (PNP) Base Q2 (PNP) Collector 7 8 Q3 (PNP) Collector 14 8 1 7 N.C. .300 (7.62) .785 (19.95) Max .200 (5.08) Max .100 (2.45) .600 (15.24) .099 (2.5) Min