NTE NTE2320

NTE2320
Silicon NPN/PNP Transistor
Quad, General Purpose Switch, Amp
(Complementary Pair)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TA = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.18mW/°C
Total Device Dissipation (TA = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 1.25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mW/°C
Total Device Dissipation (TC = +25°C, Each Die, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Total Device Dissipation (TC = +25°C, Four Die Equal Power, Note 1), PD . . . . . . . . . . . . . . . . 3.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Reistance, Junction–to–Ambient, RthJA
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100°C/W
Thermal Reistance, Junction–to–Case, RthJC
Each Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Effective, 4 Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41.6°C/W
Coupling Factors, Junction–to–Ambient
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24%
Coupling Factors, Junction–to–Case
Q1–Q4 or Q2–Q3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30%
Q1–Q2 or Q3–Q4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20%
Note 1. Voltage and current are negative for PNP transistors.
Electrical Characteristics: (TA = +25°C, Note 1 unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0, Note 2
30
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
–
–
V
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
–
–
30
nA
Emitter Cutoff Current
IEBO
VEB = 3V, IC = 0
–
–
30
nA
hFE
VCE = 10V, IC = 1mA
50
–
–
VCE = 10V, IC = 10mA
75
–
–
VCE = 10V, IC = 150mA
100
–
–
VCE = 10V, IC = 300mA
20
–
–
IC = 150mA, IB = 15mA
–
–
0.4
V
IC = 300mA, IB = 30mA
–
–
01.4
V
IC = 150mA, IB = 15mA
–
–
1.3
V
IC = 300mA, IB = 30mA
–
–
2.0
V
200
350
–
MHz
–
6.0
8.0
pF
–
4.5
8.0
pF
–
20
30
pF
–
17
30
pF
ON Characteristics (Note 3)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product
Output Capacitance
NPN
fT
Cobo
VCE = 20V, IC = 50mA, f = 100MHz,
Note 3
VCB = 10V, IE = 0, f = 1MHz
PNP
Input Capacitance
NPN
Cibo
VEB = 2V, IC = 0, f = 1MHz
PNP
Switching Characteristics
Turn–On Time
ton
VCC = 30V, VEB = 0.5V, IC = 150mA,
IB1 = 15mA
–
30
–
ns
Turn–Off Time
toff
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
–
225
–
ns
Note 1. Voltage and current are negative for PNP transistors.
Note 2. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating.
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Pin Connection Diagram
Q1 (NPN) Collector
1
14 Q4 (NPN) Collector
Q1 (NPN) Base
2
13 Q4 (NPN) Base
Q1 (NPN) Emitter
3
12 Q4 (NPN) Emitter
N.C.
4
11
Q2 (PNP) Emitter
5
10 Q3 (PNP) Emitter
Q2 (PNP) Base
6
9
Q3 (PNP) Base
Q2 (PNP) Collector
7
8
Q3 (PNP) Collector
14
8
1
7
N.C.
.300 (7.62)
.785 (19.95) Max
.200 (5.08)
Max
.100 (2.45)
.600 (15.24)
.099 (2.5) Min