NTE2332 Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc. Features: D High DC Current Gain D Large Current Capacity and Wide ASO D Contains 60 ±10V Avalanche Diode Between Collector and Base D Uniformity in Collector–to–Base Breakdown Voltage Due to Adoption of Accurate Impurity Diffusion Process D 25mJ Reverse Energy Rating Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified) Collector to Base Voltage, VCBO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Collector to Emitter Voltage, VCEO, . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak Collector Current, icp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4A Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICEO VCB = 40V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 2 mA Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified) Parameter Symbol DC Current Gain Test Conditions Min Typ Max hFE VCE = 5V, IC = 1A fT VCE = 5V, IC = 1A – 180 – MHZ Collector–Emitter Saturation Voltage VCE(sat) IC = 1A, IB = 4mA – 1.0 1.5 V Base–Emitter Saturation Voltage VBE(sat) IC = 1A, IB = 4mA – – 2.0 V V(BR)CBO IC = 0.1mA, IE = 0 50 60 70 V Collector–Emitter Breakdown V(BR)CEO IC = 1mA, RBE = ∞ Voltage 50 60 70 V Unclamped Inductive Load Energy Es/b L = 100mH, RBE = 100Ω 25 – – mJ Turn–On Time ton VCC = 20V, IC = 1A – 0.2 – µs Storage Time tstg IB1 = –IB2 = 4mA – 3.5 – µs tf IB1 = –IB2 = 4mA – 0.5 – µs Gain Bandwidth Product Collector–Base Breakdown Voltage Fall Time 1000 4000 Unit – .420 (10.67) Max .110 (2.79) C .147 (3.75) Dia Max B .500 (12.7) Max E .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab