ISC 2SD1230

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V
·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.)
·Complement to Type 2SB913
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulator control applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
s
c
s
i
.
w
PARAMETER
w
w
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
VALUE
UNIT
110
V
100
V
6
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
12
A
Collector Power Dissipation
@Ta=25℃
2.5
PC
Tj
Tstg
n
c
.
i
m
e
W
Collector Power Dissipation
@TC=25℃
60
Junction Temperature
150
℃
-55~150
℃
Storage Temperature Range
isc Website:www.iscsemi.cn
2SD1230
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1230
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA; RBE= ∞
100
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
110
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4A, IB= 8mA
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4A, IB= 8mA
2.0
V
ICBO
Collector Cutoff current
VCB= 80V, IE= 0
0.1
mA
IEBO
Emitter Cutoff Current
3.0
mA
fT
hFE
w
ton
Turn-On Time
tstg
Storage Time
Fall Time
isc Website:www.iscsemi.cn
TYP.
B
n
c
.
i
m
e
s
c
is
.
w
w
DC Current Gain
MIN
B
Current-Gain—Bandwidth Product
Switching Times
tf
CONDITIONS
VEB= 5V; IC= 0
IC= 4A; VCE= 5V
IC= 4A; VCE= 3V
IC = 4A, IB1 = -IB2= 8mA;
RL= 12.5Ω; VCC= 50V
MAX
UNIT
20
MHz
0.6
μs
4.8
μs
1.6
μs
1500