isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage: V(BR)CEO = 100V(Min.) ·Complement to Type 2SB913 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT 110 V 100 V 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A Collector Power Dissipation @Ta=25℃ 2.5 PC Tj Tstg n c . i m e W Collector Power Dissipation @TC=25℃ 60 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1230 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1230 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 110 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A, IB= 8mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A, IB= 8mA 2.0 V ICBO Collector Cutoff current VCB= 80V, IE= 0 0.1 mA IEBO Emitter Cutoff Current 3.0 mA fT hFE w ton Turn-On Time tstg Storage Time Fall Time isc Website：www.iscsemi.cn TYP. B n c . i m e s c is . w w DC Current Gain MIN B Current-Gain—Bandwidth Product Switching Times tf CONDITIONS VEB= 5V; IC= 0 IC= 4A; VCE= 5V IC= 4A; VCE= 3V IC = 4A, IB1 = -IB2= 8mA; RL= 12.5Ω; VCC= 50V MAX UNIT 20 MHz 0.6 μs 4.8 μs 1.6 μs 1500