NTE NTE2334

NTE2334
Silicon NPN Transistor
Darlington Driver w/Internal Damper
and Zener Diode
Description:
The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220
type package designed for use in applications such as the switching of the L load of a motor driver,
hammer driver, relay driver, etc.
Features:
D High DC Current Gain
D Large Current Capacity and Wide ASO
D Contains 60 ±10V Avalanche Diode between Collector and Base
D High 50mJ Reverse Energy Rating
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VBE = 40V, IE = 0
–
–
100
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
3
mA
DC Current Gain
hFE
VCE = 3V, IC = 2.5A
fT
VCE = 5V, IC = 2.5A
Gain Bandwidth Product
1000 4000
–
20
–
–
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Saturation Voltage
VCE(sat) IC = 2.5A, IB = 5mA
–
0.9
1.5
V
Base–Emitter Saturation Voltage
VBE(sat)
–
–
2.0
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 5mA, IE = 0
50
60
70
V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = ∞
50
60
70
V
Unclamped Inductive Load Energy
Es/b
L = 100mH, RBE = 100Ω
50
–
–
mJ
Turn–On Time
ton
–
0.6
–
µs
Storage Time
tstg
VCC = 20V, IC = 3A,
IB1 = –IB2 = 6mA
–
4.0
–
µs
–
1.5
–
µs
Fall Time
IC = 2.5A, IB = 5mA
tf
.420 (10.67)
Max
.110 (2.79)
C
.147 (3.75)
Dia Max
.500
(12.7)
Max
B
.250 (6.35)
Max
E
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab