NTE NTE2358

NTE2357 (NPN) & NTE2358 (PNP)
Silicon Complementary Transistors
Digital w/2 Built–In 22k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 22kΩ, R2 = 22kΩ)
D Small–Sized Package (TO92 type)
Applications:
D Switching Circuit
D Inverter
D Interface Circuit
D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector to Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter to Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +160°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ICBO
VCB = 40V, IE = 0
–
–
0.1
µA
ICEO
VCE = 40V, IB = 0
–
–
0.5
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
70
113
150
µA
DC Current Gain
hFE
VCE = 5V, IC = 5mA
50
–
–
fT
VCE = 10V, IC = 5mA
–
250
–
MHz
–
200
–
MHz
–
3.7
–
pF
–
5.5
–
pF
Collector Cutoff Current
Gain Band–width Product
NTE2357
NTE2358
Output Capacitance
NTE2357
NTE2358
Cob
VCB = 10V, f = 1MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector–Emitter Saturation Voltage
VCE(sat)
Test Conditions
IC = 10mA, IB = 0.5mA
Min
Typ
Max
Unit
–
0.1
0.3
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
50
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100µA, RBE = ∞
50
–
–
V
Input OFF Voltage
VI(off)
VCE = 5V, IC = 100µA
0.8
1.1
1.5
V
Input ON Voltage
VI(on)
VCE = 200mV, IC = 5mA
1.0
1.9
3.0
V
Input Resistance
R1
15
22
29
kΩ
R1/R2
0.9
1.0
1.1
Input Resistance Ratio
Schematic Diagram
Collector
(Output)
Collector
(Output)
R1
R1
Base
(Input)
Base
(Input)
R2
R2
Emitter
(GND)
Emitter
(GND)
NPN
PNP
.165 (4.2)
Max
.126
(3.2)
Max
.071
(1.8)
.500
(12.7)
Max
E C B
.050 (1.27)
.050 (1.27)
.035 (0.9)
.102
(2.6)
Max