NTE2511 (NPN) & NTE2512 (PNP) Silicon Complementary Transistors High Frequency Video Output for HDTV Features: D High Gain Bandwidth Product: fT = 800MHz Typ. D Low Reverse Transfer Capacitance and Excellent HF Response: NTE2511: Cre = 2.9pF NTE2512: Cre = 4.6pF Applications: D Very High–Definition CRT Display D Video Output D Color TV Chroma Output D Wide–Band Amp Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 60V, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VEB = 2V, IC = 0 – – 1.0 µA DC Current Gain hFE VCE = 10V, IC = 50mA 100 – 320 VCE = 10V, IC = 400mA 20 – – VCE = 10V, IC = 100mA – 800 – Gain Bandwidth Product fT MHz Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Collector Emitter Saturation Voltage NTE2511 VCE(sat) Test Conditions Min Typ Max Unit – – 0.6 V – – 0.8 V – – 1.0 V IC = 100mA, IB = 10mA NTE2512 Base Emitter Saturation Voltage VBE(sat) IC = 100mA, IB = 10mA Collector Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 80 – – V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 60 – – V Emitter Base Breakdown Voltage V(BR)EBO IE = 100µA, IC = 0 4 – – V – 3.4 – pF – 5.2 – pF – 2.9 – pF – 4.6 – pF Output Capacitance NTE2511 Cob VCB = 30V, f = 1MHz NTE2512 Reverse Transfer Capacitance NTE2511 Cre VCB = 30V, f = 1MHz NTE2512 .330 (8.38) Max .175 (4.45) Max .450 (11.4) Max .118 (3.0) Dia .655 (16.6) Max .030 (.762) Dia E C B .090 (2.28) .130 (3.3) Max