NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors High Speed Switch Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible for them to be driven directly from integrated circuits. Features: D Very Small–Sized Package D High Breakdown Voltage: VCEO = 50V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mA Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. For PNP device (NTE2362), voltage and current values are negative. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40Vdc, IE = 0 – – 0.1 µA Emitter Cutoff Current IEBO VBE = 4Vdc – – 0.1 µA DC Current Gain hFE VCE = 5V, IC = 10mA 200 – 400 NTE2361 – 200 – MHz NTE2362 – 300 – MHz Gain Bandwidth Product fT VCE = 10V, IC = 50mA Electrical Characteristics (Cont’d): (TC = 25°C unless otherwise specified) Parameter Symbol Output Capacitance Cob Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Test Conditions Min Typ Max Unit VCB = 10Vdc, f = 1MHz NTE2361 – 5.6 – pF NTE2362 – 3.7 – pF IC = 100mA, IB = 10mA NTE2361 – 0.15 0.4 V NTE2362 – 0.1 0.3 V IC = 100mA, IB = 10mA – 0.8 1.2 V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100µA, RBE = ∞ 50 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = ∞ 5 – – V VCC = 20V, IC = 100mA, IB1 = 10mA, IB2 = 100mA – 70 – ns – 400 – ns NTE2361 – 50 – ns NTE2362 – 70 – ns Rise Time ton Storage Time tstg Fall Time tf Note 1. For PNP device (NTE2362), voltage and current values are negative. Note 2. Conditions apply to both except where noted. .165 (4.2) Max .126 (3.2) Max .071 (1.8) .500 (12.7) Max E C B .050 (1.27) .050 (1.27) .035 (0.9) .102 (2.6) Max