NTE NTE2585

NTE2585
Silicon NPN Transistor
High Voltage Amplifier
Features:
D High Breakdown Voltage
D Low Output Capacitance
D High Reliability
D Intended for High–Density Mounting (Suitable for Sets Whose Height is Restricted)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 800V, IE = 0
–
–
1
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
1
µA
DC Current Gain
hFE
VCE = 5V, IC = 2mA
20
–
50
VCE = 5V, IC = 10mA
10
–
–
fT
VCE = 10V, IC = 2mA
–
40
–
MHz
Cob
VCB = 100V, f = 1MHz
–
1.6
–
pF
Collector Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 2mA
–
–
1.0
V
Base Emitter Saturation Voltage
VBE(sat)
IC = 10mA, IB = 2mA
–
–
1.5
V
Collector Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0
800
–
–
V
Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞
800
–
–
V
7
–
–
V
Gain–Bandwidth Product
Output Capacitance
Emitter Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
.402 (10.2)
.035
(0.9)
.177 (4.5)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
.100 (2.54)