NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain: hFE = 2000 (Typ) @ IC = 2A D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.23°C/W Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 80 – – V OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 50mA, IB = 0, Note 1 ICEO VCE = 80V, IB = 0 – – 100 µA ICBO VCE = 80V, IE = 0 – – 100 µA VCE = 80V, IE = 0, TC = +100°C – – 500 µA VBE = 5V, IC = 0 – – 2.0 mA IEBO Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 3V, IC = 1.5A 750 2000 – NTE254 VCE = 3V, IC = 2A 750 2000 – NTE253 & NTE253 VCE = 3V, IC = 4A 100 – – IC = 1.5A, IB = 30mA – – 2.5 V NTE254 IC = 2.0A, IB = 40mA – – 2.8 V NTE253 & NTE254 IC = 4.0A, IB = 40mA – – 3.0 V VCE = 3V, IC = 1.5A – – 2.5 V NTE254 VCE = 3V, IC = 2.0A – – 2.5 V NTE253 & NTE254 VCE = 3V, IC = 4.0A – – 3.0 V 1.0 – – ON Characteristics (Note 1) DC Current Gain NTE253 hFE Collector–Emitter Saturation Voltage NTE253 Base–Emitter ON Voltage NTE253 VCE(sat) VBE(on) Dynamic Characteristics Small–Signal Current Gain |hfe| VCE = 3V, IC = 1.5A, f = 1MHz Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP). .330 (8.38) Max NTE253 .175 (4.45) Max C .450 (11.4) Max B E .118 (3.0) Dia .655 (16.6) Max NTE254 .030 (.762) Dia C E C B B .090 (2.28) E .130 (3.3) Max