NTE NTE250

NTE249 (NPN) & NTE250 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for use as output devices in complementary general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 3500 Typ @ IC = 10A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.857W/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
100
–
–
V
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Emitter Leakage Current
Emitter Cutoff Current
V(BR)CEO IC = 100mA, IB = 0, Note 1
ICEO
VCE = 50V, IE = 0
–
–
3.0
mA
ICER
VCB = 100V, RBE = 1kΩ
–
–
1.0
mA
VCB = 100V, RBE = 1kΩ, TA = +150°C
–
–
5.0
mA
VBE = 5V, IC = 0
–
–
5.0
mA
IEBO
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Voltage
hFE
VCE = 3V, IC = 10A
1000
–
–
VCE(sat)
IC = 10A, IB = 40mA
–
–
2.5
V
IC = 16A, IB = 80mA
–
–
4.0
V
VCE = 3V, IC = 10A
–
–
3.0
V
VBE
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE249
C
B
.135 (3.45) Max
.875 (22.2)
Dia Max
.350 (8.89)
Seating
Plane
E
.312 (7.93) Min
.040 (1.02)
1.187 (30.16)
Emitter
NTE250
.665
(16.9)
.215 (5.45)
C
.430
(10.92)
.188 (4.8) R Max
B
Base
E
.525 (13.35) R Max
Collector/Case