NTE NTE2636

NTE2636
Silicon NPN Transistor
Horizontal Deflection w/Internal Damper Diode
Features:
D High Breakdown Voltage: VCES = 1500V
D Built–In Damper Diode
D Isolated TO3PFM Type Package
Applications:
D TV/Character Display Horizontal Deflection Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Peak Current, IC(peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Collector Surge Current, IC(surge) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Collector–Emitter Diode Forward Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Emitter–Base Breakdown Voltage
Symbol
Test Conditions
V(BR)EBO IE = 500mA, IC = 0
Min
Typ
Max
Unit
6
–
–
V
µA
Collector Cutoff Current
ICES
VCE = 1500V, RBE = 0
–
–
500
DC Current Transfer Ratio
hFE
VCE = 5V, IC = 1A
–
–
25
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.2A
–
–
5
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.2A
–
–
1.5
V
IF = 8A
–
–
2.0
V
ICP = 6A, IB1 = 1.2A, IB2 ` –2.4A,
f H = 31.5kHz
–
–
0.5
µs
Collector–Emitter Diode Forward Voltage
Fall Time
VECF
tf
.217 (5.5)
.615 (15.62)
.197
(5.0)
Isol
.126
(3.22)
Dia
.783
(19.9)
.197
(5.0)
.126 (3.2)
.827
(21.0)
B
C
E
.215 (5.47)