2N6294 Silicon NPN Transistor Darlington Power Amplifier, Switch

2N6294
Silicon NPN Transistor
Darlington Power Amplifier, Switch
TO−66 Type Package
Description:
The 2N6294 silicon NPN Darlington transistor is a TO−66 type case designed for general purpose
amplifier, low−frequency switching and hammer driver applications.
Features:
D High DC Current Gain: hFE = 3000 Typ @ IC = 2A
D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 2A
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V Min
D Monolithic Construction with Built−In Base−Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mA
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.286W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.5C/W
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
60
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 50mA, IB = 0
ICEO
VCE = 30V, IB = 0
−
−
0.5
mA
ICEX
VCE = 60V, VEB(off) = 1.5V
−
−
0.5
mA
VCE = 60V, VEB(off) = 1.5V, TA = +150C
−
−
5.0
mA
VBE = 5V, IC = 0
−
−
2.0
mA
IEBO
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 3V, IC = 2A
750
−
18000
VCE = 3V, IC = 4A
100
−
−
IC = 2A, IB = 8mA
−
−
2.0
V
IC = 4A, IB = 40mA
−
−
3.0
V
ON Characteristics
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 40mA
−
−
4.0
V
Base−Emitter ON Voltage
VBE(on)
VCE = 3V, IC = 2A
−
−
2.8
V
4.0
−
−
Dynamic Characteristics
Magnitude of Common Emitter
Small−Signal Short−Circuit
Forward Current Transfer Ratio
|hfe|
IC = 1.5A, VCE = 3V, f = 1MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 0.1MHz
Small−Signal Current Gain
hfe
IC = 1.5A, VCE = 3V, f = 1kHz
120
300
C
B
E
.485 (12.3)
Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.960 (24.3)
.360 (9.14)
Min
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.200
(5.08)
.145 (3.7) R Max
Collector/Case
Emitter
−
−
pF