NTE NTE3096

NTE3096
Optoisolator
Low LED Drive NPN Transistor Output
Description:
The NTE3096 is a gallium arsenide, infrared emitting diode optically coupled to a silicon phototransistor
in a 6–Lead DIP type package. This device is designed for applications requiring low LED drive current,
high electrical isolation, small package size and low cost such as interfacing and coupling systems,
phase feedback controls, solid–state relays and general purpose switching circuits.
Features:
D High Transfer Ratio with Low LED Drive
D High Electrical Isolation
D Low Collector–Emitter Saturation Voltage
Absolute Maximum Ratings: (TA = +25°C, unless otherwise specified)
Infrared Emitting Diode
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Forward Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
Peak (Pulse Width 1µsec, 2% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3mW/°C
Phototransistor
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current (Continuous), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Total Device
Power Dissipation (Negligible Power in Transistor), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above 25°C ambient . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Surge Isolation Voltage (60Hz, Peak AC, 5sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7500V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
0.7
1.1
1.4
V
Infrared Emitting Diode
Forward Voltage
VF
IF = 1mA, TA = 0° to +70°C
Reverse Leakage Current
IR
VR = 6V
–
0.05
10
µA
Capacitance
CJ
V = 0, f = 1MHZ
–
150
–
pf
Phototransistor (IF = 0 unless otherwise specified)
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA
30
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA
70
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 100µA
7
–
–
V
VCE = 5V, Base Open
–
1.0
25
nA
VCE = 30V, Base Open, TA = +70°C
–
–
50
µA
ICBO
VCB = 5V, Emitter Open
–
–
10
nA
IC/IF
IF = 1mA, VCE = 5V
50
–
–
%
30
–
–
%
–
–
0.5
V
–
–
Ω
Collector–Emitter Dark Current
ICEO
Collector–Base Dark Current
Coupled Characteristics
DC Current Transfer Ratio
TA = 0° to +70°C
Collector–Emitter Saturation Voltage
VCE(sat)
IF = 1mA, IC = 100µA
Isolation Resistance
R(I–O)
V(I–O) = 500VDC, Note 1
1011
Isolation Surge Voltage
VISO
60Hz, Peak AC, 5sec, Note 1
7500
–
–
V
Isolation Capacitance
C(I–O)
V(I–O) = 0, f = 1MHZ
–
1.3
2.5
pF
VCE = 10V, V, RL = 100Ω
–
–
20
µs
–
–
20
µs
Switching Characteristics
Turn–On Time
ton
Turn–Off Time
toff
Note 1. For this test, LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6
are common.
6
1
Pin Connection Diagram
Anode
1
6 Base
Cathode
2
5 Collector
N.C.
3
4 Emitter
5
4
2
3
.260
(6.6)
Max
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.54)