US2A THRU US2M 50V-1000V 2.0A SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS Features • • • • • Plastic package has UL flammability Classification 94V-0 Glass Passivated chip junction Built in strain relief Fast switching speed for high efficiency High temperature soldering guaranteed: 250 /10 seconds Mechanical Data • • • • Case: JEDED DO-214AA transfer molded plastic Terminals: Solder plated, Solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.003 ounce, 0.093 gram Maximum Ratings & Thermal Characteristics Ratings at 25℃ ambient temperature unless otherwise specified. Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak forward surge current 8.3 ms single half sine-wave Typical thermal resistance Operating junction and storage temperature range Electrical Characteristics IF =2.0A TA= 25℃ TA= 125℃ IF=0.5A IR=1.0A IRR=0.25A MAX. Reverse Recovery Time VR = 4.0V, f = 1MHz E-mail: [email protected] Unit 50 100 200 400 600 800 1000 V VRMS 35 70 140 280 420 560 700 V VDC 50 100 200 400 600 800 1000 V IF(AV) 2.0 A IFSM 50 A RθJA 50 ℃/W ℃ -55 --- +150 Tj, TSTG Ratings at 25℃ ambient temperature unless otherwise specified. Maximum forward voltage Type junction capacitance US2K US2M VRRM Symbols Maximum reverse current US2A US2B US2D US2G US2J US2A US2B US2D US2G US2J VF 1.0 1.3 US2K US2M 1.7 10 500 IR trr 50 Cj 1 of 2 V μA 75 15 Unit nS pF Web Site: www.taychipst.com US2A THRU US2M 50V-1000V 2.0A SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS US2A thru US2D 2 1 US2G 0.2 US2J thru US2M 0.1 Tj = 25 °C 0.01 0.8 1.0 1.8 1.6 1.4 1.2 2.4 2.0 1.6 1.2 0.8 0.4 0 0 25 50 75 100 125 150 175 °C Tamb, ambient temperature (°C) F VF Instantaneous Forward Voltage (V) FIG.4-TYPICAL JUNCTION CAPACITANCE Fig.3 I -TYPICAL REVERSE CHARACTERISTICS 100 100 JUNCTION CAPACITANCE,(pF) INSTANTANEOUS REVERSE CURRENT, (μA) FORWARD CURRENT DERATING CURVE Fig.2 IF(A) Average Forward Rectified Current (A) IF Instantaneous Forward Current (A) F Fig.1 TYPICAL FORWARD CHARACTERISTIC 10 10 TJ =100 C 1.0 US 2A -U US 10 2 J -U S2 G S 2M TJ =25 C f=1MHz Vsig=50mVp-p TJ=25 1 0.1 0.1 0 20 40 60 80 100 120 1.0 10 100 140 REVERSE VOLTAGE,(V) PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) F1G.5-TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC Trr 50Ω 10Ω NONINDUCTIVE NONINDUCTIVE +0.5A (-) (+) 25 Vdc (approx.) (-) D.U.T. 1Ω NON INDUCTIVE PULSE GENERATIOR (NOTE 2) 0 -0.25A (+) OSCILLOSCOPE (NOTE 1) -1.0A 1cm NOTES : 1.Rise Time=7ns max. Input Impedance= 1 magohm. 22pF 2.Rise time=10ns max. Source Impedance= 50 ohms E-mail: [email protected] SET TIME BASE FOR 50/100ns/cm 2 of 2 Web Site: www.taychipst.com