NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Efficiency = 45% D Intermodulation Distortion @ 20W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatched at all Phase Angle with 30:1 VSWR Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Withstand Current (t = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.46W/°C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0 20 – – V V(BR)CES IC = 50mA, VBE = 0 40 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 50mA, IE = 0 40 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 4 – – V – – 5 mA OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current ICES VCE = 12.5V, VBE = 0 Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 1A, VCE = 5V 10 35 – Cob VCB = 12.5V, IE = 0, f = 1MHz – 15 200 pF Dynamic Characteristics Output Capacitance Functional Tests (VCC = 12.5V unless otherwise specified) Common–Emitter Amplifier Power Gain GPE Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz 12 15 – dB Power Output Pout VCE = 12.5V, f = 30MHz 20 – – W Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz 45 – – % VCE = 12.5V, Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz – –35 –30 dB η Collector Efficiency Intermodulation Distortion IMD Load Mismatch Pout = 20W (PEP), ICmax = 1.75A, ICQ = 25mA, f = 30, 30.001MHz .725 (18.42) > 30:1 All Phase Angles .122 (3.1) Dia (2 Holes) E C B E .250 (6.35) .225 (5.72) .860 (21.84) .378 (9.56) Dia .005 (0.15) .255 (6.5) .185 (4.7) .975 (24.77) .085 (2.14)