NTE NTE331

NTE331 (NPN) & NTE332 (PNP)
Silicon Complementary Transistors
Audio Power Amp, Switch
Description:
The NTE331 (NPN) and NTE332 (PNP) are silicon epitaxial–base complementary power transistors
in a TO–220 plastic package intended for use in power linear and switching applications.
Absolute Maximum Ratings:
Collector–Base Voltage (IE = 0), VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage (IC = 0), VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Total Power Dissipation (TC ≤ +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W Max
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Symbol
ICBO
Test Conditions
Min
Typ
Max
Unit
IE = 0, VCB = 100V
–
–
500
µA
IE = 0, VCB = 100V, TC = +150°C
–
–
5
mA
Collector Cutoff Current
ICEO
IB = 0, VCE = 50V
–
–
1
mA
Emitter Cutoff Current
IEBO
IC = 0, VEB = 5V
–
–
1
mA
VCEO(sus) IB = 0, IC = 100mA, Note 1
100
–
–
V
IC = 5A, IB = 0.5A, Note 1
–
–
1
V
IC = 10A, IB = 2.5A, Note 1
–
–
3
V
Collector–Emitter Sustaining
Voltage
Collector–Emitter Saturation
Voltage
VCE(sat)
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Base–Emitter Saturation Voltage
Test Conditions
Min
Typ
Max
Unit
VBE(sat)
IC = 10A, IB = 2.5A, Note 1
–
–
2.5
V
Base–Emitter Voltage
VBE
IC = 5A, VCE = 4V, Note 1
–
–
1.5
V
DC Current Gain
hFE
IC = 0.5A, VCE = 4V, Note 1
40
–
250
IC = 5A, VCE = 4V, Note 1
15
–
150
IC = 10A, VCE = 4V, Note 1
5
–
–
IC = 0.5A, VCE = 4V
3
–
–
Transistion Frequency
fT
Note 1. Pulsed; Pulse Duration = 300µs, Duty Cycle = 1.5%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab
MHz