352

NTE352
Silicon NPN Transistor
RF Power Amp, Driver
Description:
The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed
primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability
under rated operating conditions. Internal impedance matching ensures optimum power gain and
efficiency over the 136−175MHz band.
Features:
D 175MHz
D 12.5 Volts
D POUT = 100 Watts
D GP = 6.0dB Minimum
D Common Emitter Configuration
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18V
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current (Peak), IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270W
Operatin Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.65°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector−Base Breakdown Voltage
V(BR)CBO IC = 50mA, IE = 0
36
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CES IC = 100mA, VBE = 0
36
−
−
V
V(BR)CEO IC = 100mA, IB = 0
18
−
−
V
V(BR)EBO IE = 10mA, IC = 0
4
−
−
V
mA
Emitter−Base Breakdown Voltage
Collector Cutoff Current
ICES
VCE = 15V, IE = 0
−
−
15
hFE
IC = 5A, VCE = 5V
10
75
150
ON Characteristics
DC Current Gain
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCC = 12.5V, f = 175MHz,
PIN = 25W
100
−
−
W
6.0
−
−
dB
−
−
390
pF
Dynamic Characteristics
Output Power
POUT
Power Gain
GPE
Output Capacitance
Cob
VCB = 12.5V, f = 1MHz
Input Impedance
ZIN
f = 175MHz
1.5 − j0.9
Ω
Clamping Impedance
ZCL
f = 175MHz
0.5 − j1.0
Ω
Impedance Data
.215 (5.48)
.205 (5.18)
E
.122 (3.1) Dia
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)