NTE NTE367

NTE367
Silicon NPN Transistor
RF Power Amplifier
PO = 45W @ 512MHz
Description:
The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF
large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.
Features:
D Specified 12.5V, 470MHz Characteristics:
Output Power: 45W
Minimum Gain: 4.8dB
Efficiency: 55%
D Characterized with Series Equivalent Large–Signal Impedance Parameters
D Built–In Matching Network for Broadband Operation
D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and
50% Overdrive
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V(BR)CEO IC = 20mA, IB = 0
16
–
–
V
V(BR)CES IC = 20mA, VBE= 0
36
–
–
V
V(BR)EBO IE = 5mA, IC – 0
4
–
–
V
–
–
10
mA
OFF Characteristics
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
ICES
VCE = 15V, VBE = 0, TC = +25°C
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
ON Characteristics
DC Current Gain
hFE
IC = 4A, VCE = 5V
20
70
150
Cob
VCB = 12.5V, IE = 0, f = 1MHz
–
90
125
pF
Gpe
VCC = 12.5V, PO = 45W,
IC(Max) = 5.8A, f = 470MHz
4.8
5.4
–
dB
55
60
–
%
13
15
W
Dynamic Characteristics
Output Capacitance
Functional Tests
Common–Emitter Amplifier Power Gain
η
Collector Efficiency
Input Power
Pin
VCC = 12.5V, PO = 45W,
f = 470MHz
–
Load Mismatch Stress
y
VCC = 16V, f = 470MHz,
VSWR = 20:1, All Phase Angles,
Note 1, Note 2
No Degradation in
Output Power
Series Equivalent Input Impedance
Zin
–
1.4+j4.0
–
Ω
Series Equivalent Output Impedance
ZOL
VCC = 12.5V, PO = 45W,
f = 470MHz
–
1.2+j2.8
–
Ω
Note 1. Pin = 150% of Drive Requirement for 45W output @ 12.5V.
Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance
to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture
terminated in a 20:1 minimum load mismatch at all phase angles.
.215 (5.48)
.205 (5.18)
.122 (3.1) Dia
E
B
.405
(10.3)
Min
C
E
.155 (3.94)
.500 (12.7) Dia
.005 (0.15)
.270
(6.85)
.160 (4.06)
.725 (18.43)
.975 (24.78)