NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5V, 470MHz Characteristics: Output Power: 45W Minimum Gain: 4.8dB Efficiency: 55% D Characterized with Series Equivalent Large–Signal Impedance Parameters D Built–In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16V High Line and 50% Overdrive Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 670mW/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction to Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 20mA, IB = 0 16 – – V V(BR)CES IC = 20mA, VBE= 0 36 – – V V(BR)EBO IE = 5mA, IC – 0 4 – – V – – 10 mA OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ICES VCE = 15V, VBE = 0, TC = +25°C Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 4A, VCE = 5V 20 70 150 Cob VCB = 12.5V, IE = 0, f = 1MHz – 90 125 pF Gpe VCC = 12.5V, PO = 45W, IC(Max) = 5.8A, f = 470MHz 4.8 5.4 – dB 55 60 – % 13 15 W Dynamic Characteristics Output Capacitance Functional Tests Common–Emitter Amplifier Power Gain η Collector Efficiency Input Power Pin VCC = 12.5V, PO = 45W, f = 470MHz – Load Mismatch Stress y VCC = 16V, f = 470MHz, VSWR = 20:1, All Phase Angles, Note 1, Note 2 No Degradation in Output Power Series Equivalent Input Impedance Zin – 1.4+j4.0 – Ω Series Equivalent Output Impedance ZOL VCC = 12.5V, PO = 45W, f = 470MHz – 1.2+j2.8 – Ω Note 1. Pin = 150% of Drive Requirement for 45W output @ 12.5V. Note 2. y = Mismatch stress factor – the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .215 (5.48) .205 (5.18) .122 (3.1) Dia E B .405 (10.3) Min C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78)