NTE377 (NPN) & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A D Fast Switching Speeds D Complementary Pairs Simplifies Designs Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RΘJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W Thermal Resistance, Junction–to–Ambient, RΘJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75°C/W Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +275°C Note 1. Pulse Width ≤ 6ms, Duty Cycle ≤ 50%. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Cutoff Current ICES VCE = 80V, VBE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 5V – – 100 µA hFE VCE = 1V, IC = 2A, TJ = +25°C 60 – – VCE = 1V, IC = 4A, TJ = +25°C 40 – – ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA – – 1.0 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, Ib = 800mA – – 1.5 V VCB = 10V, ftest = 1MHz – 130 – pF – 230 – pF – 50 – MHz – 40 – MHz – 300 – ns – 135 – ns – 500 – ns – 140 – ns – 100 – ns Dynamic Characteristics Collector Capacitance NTE377 Ccb NTE378 Gain Bandwidth Product NTE377 fT IC = 500mA, VCE = 10V, f = 20MHz NTE378 Switching Times Delay and Rise Time NTE377 td + tr IC = 5A, IB1 = 500mA NTE378 Storage Time ts Fall Time NTE377 tf IC = 5A, IB1 = IB2 = 500mA NTE378 .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab