NTE NTE186

NTE186 (NPN) & NTE187 (PNP)
Silicon Complementary Transistors
General Purpose Output & Driver for Audio Amplifier
Description:
The NTE186 (NPN) and NTE187 (PNP) are silicon complementary transistors in a TO202 type case
designed for use as output and driver stages of amplifiers operating at frequencies from DC to greater
than 1MHz, series, shunt, and switching regulators, low and high frequency inverters/converters, and
many other general purpose applications.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PT
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Lead Temperature (During Soldering, 1/16” from case for 10sec max), TL . . . . . . . . . . . . . . . +260°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
DC Current Gain
hFE
Test Conditions
Min
Typ
Max
VCE = 1V, IC = 200mA
100
–
220
VCE = 1V, IC = 2A
20
–
–
Unit
Collector Saturation Voltage
VCE(sat)
IC = 1A, IB = 50mA
–
–
0.5
V
Base Saturation Voltage
VBE(sat)
IC = 1A, IB = 100mA
–
–
1.3
V
Collector Cutoff Current
ICES
VCE = 70V, TJ = +25°C
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, TJ = +25°C
–
–
100
µA
Collector Capacitance
Ccbo
VCB = 10V, f = 1MHz
–
–
100
pF
Current Gain–Bandwidth Product
fT
VCE = 4V, IC = 20mA
–
50
–
MHz
Delay Time
td
IC = 1A, IB1 = IB2 = 100mA
–
100
–
ns
Rise Time
tr
–
100
–
ns
Storage Time
ts
–
500
–
ns
Fall Time
tf
75
–
–
ns
.380 (9.56)
.180 (4.57)
.132 (3.35) Dia
C
.500
(12.7)
.325
(9.52)
1.200
(30.48)
Ref
.070 (1.78) x 45°
Chamf
.300
(7.62)
.050 (1.27)
.400
(10.16)
Min
B
.100 (2.54)
C
E
.100 (2.54)