isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44H Series DESCRIPTION ·Low Saturation Voltage ·Fast Switching Speeds ·Complement to Type D45H Series APPLICATIONS ·Designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,converters and power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEO VEBO PARAMETER Collector-Emitter Voltage VALUE D44H8 UNIT 60 V D44H10,11 80 Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A PC Collector Power Dissipation @TC=25℃ 50 W Tj Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 75 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors D44H Series ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCE(sat) PARAMETER Collector-Emitter Saturation Voltage CONDITIONS D44H10 IC= 8A ;IB= 0.8 A D44H8,11 IC= 8A ;IB= 0.4 A MIN TYP MAX UNIT 1 V Base-Emitter Saturation Voltage IC= 8A ;IB= 0.8 A 1.5 V ICES Collector Cutoff Current VCE=Rated VCEO; 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain VBE(sat) D44H10 35 IC= 2A ; VCE= 1V D44H8,11 60 D44H10 hFE-2 DC Current Gain 20 IC= 4A ; VCE= 1V D44H8,11 COB fT 40 Output Capacitance VCB= 10V,f= 0.1MHz 130 pF Current-Gain—Bandwidth Product IC= 0.5A;VCE= 10V;ftest=20MHz 50 MHz 0.5 μs 0.14 μs Switching Times ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 0.5A VCC= 20V INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Website：www.iscsemi.cn isc Product Specification D44H Series