NTE NTE454

NTE454
MOSFET, N–Ch, Dual Gate,
TV UHF/RF Amp, Gate Protected
Description:
The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer
applications.
Features:
D Low Reverse Transfer Capacitance – Crss = 0.03pf (Max)
D High Forward Transfer Admittance – |yfe| = 0–20 mmhos
D Diode Protected Gates
Absolute Maximum Ratings:
1
Drain
2
Gate 2
3
Gate 1
4
Source
Drain Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Vdc
Drain–Gate Voltage, VDG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc
Gate Current, IG1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
IG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mAdc
Drain Current–Continuous, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mAdc
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2Watt
Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Storage Channel Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to +200°C
Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to +175°C
Lead Temperature, 1/16” from Seated Surface for 10 Seconds, TL . . . . . . . . . . . . . . . . . . . . . . 300°C
Electrical Characteristics: (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Test Conditions
Min
Typ
Max
Unit
20
–
–
Vdc
OFF CHARACTERISTICS
Drain–Source Breakdown
Voltage
V(BR)DSX
ID = 10µAdc, V5 = 0,
VGIS = VG25 = 5.0Vdc
Gate 1= Source Breakdown
Voltage (Note 1)
V(BR)G1SO IG1 = ±10mAdc, VGIS = VDS = 0
±6.0
±12
±30
Vdc
Gate 2–Source Breakdown
Voltage (Note 1)
V(BR)G2SO IG2 = ±10mAdc, VG15 = VD5 = 0
±5.0
±12
±30
Vdc
Gate 1 to Source Cutoff Voltage
VGIS(off)
VDS = 15Vdc, VG2S = 4.0Vdc,
ID = 20µAdc
–0.5
–1.5
–5.0
Vdc
Gate 2 to Source Cutoff Voltage
VG2S(off)
VDS = 15Vdc, VG15 = 0,
ID = 20µAdc
–0.2
–1.4
–5.0
Vdc
VGIS = ±5.0Vdc, VG2S = VDS = 0
–
±0.04
±10
nAdc
VG2S = –5.0Vdc, VG2S = VDS = 0,
TA = 150°C
–
–
–10
µAdc
VG2S = ±5.0Vdc, VGIS = VDS = 0
–
±0.05
±10
nAdc
VG2S = –5.0Vdc, VGIS = VDS = 0,
TA = 150°C
–
–
–10
µAdc
VDS = 15Vdc, VGIS = 0,
VG25 = 4.0Vdc
6.0
13
30
mAdc
Gate 1 Leakage Current
IG1SS
Gate 2 Leakage Current
IG2SS
ON CHARACTERISTICS
Zero–Gate Voltage Drain
Current (Note 2)
IDSS
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
(Note 3)
|yfe|
VDS = 15Vdc, VG2S = 4.0Vdc,
VGIS = 0, f = 1.0kHZ
8.0
12.8
20
mmhos
Input Capacitance
Ciss
VDS = 15Vdc, VG2S = 4.0Vdc,
ID = IDSS, f = 1.0MHZ
–
3.3
–
pF
Output Capacitance
Coss
VDS = 15Vdc, VG2S = 4.0Vdc,
ID = IDSS, f = 1.0MHZ
–
1.7
–
pF
Reverse Transfer Capacitance
Crss
VDS = 15Vdc, VG2S = 4.0Vdc,
ID = 10mAdc, f = 1.0MHZ
0.005
0.014
0.03
pF
Noise Figure
NF
VDD = 18Vdc, VGG = 7.0Vdc,
f = 200MHZ
–
1.8
4.5
dB
Common Source Power Gain
Gps
VDD = 18Vdc, VGG = 7.0Vdc,
f = 200MHZ
15
20
25
dB
Bandwidth
BW
VDD = 18Vdc, VGG = 7.0Vdc,
f = 200MHZ
5.0
–
9.0
MHZ
VGG(GC)
VDD = 18Vdc, ∆Gps = –30dB,
f = 200MHZ
0
–1.0
–3.0
Vdc
FUNCTIONAL CHARACTERISTICS
Gain Control Gate Supply
Voltage (Note 4)
Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures
that the gate–voltage limiting network is functioning properly.
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating.
Note 4. ∆Gps is defined as the change in Gpe from the values at VGG = 7.0V power gain conversion
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Gate 2
Drain
Gate 1
45°
Source/Case
.040 (1.02)