NTE NTE452

NTE452
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Description:
The NTE452 is a silicon, N–channel junction field effect tranistor (JFET) in a TO72 type package designed to be used in the depletion mode in VHF/UHF amplifiers.
Absolute Maximum Ratings:
Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.71mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
30
–
–
V
VGS = 20V, VDS = 0
–
–
100
pA
VGS = 20V, VDS = 0, TA = +150°C
–
–
200
pA
ID = 1nA, VDS = 15V
–
–
6
V
1.0
–
5.5
V
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
Gate–Source Voltage
Gate–Source Forward Voltage
V(BR)GSS IG = 1µs, VDS = 0
IGSS
VGS(off)
VGS
ID = 0.5mA, VDS = 15V
VGS(f)
IG = 1mA, VDS = 0
–
–
1.0
V
IDSS
VDS = 15V, VGS = 0
5
–
15
mA
Forward Transfer Admittance
|Yfs|
VDS = 15V, VGS = 0, f = 1kHz, Note 1
4500
–
Real Part of Forward Transfer
Admittance
Yfs(real)
VDS = 15V, VGS = 0, f = 400MHz
4000
–
ON Characteristics (Note 1)
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.
7500 µmhos
–
µmhos
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VDS = 15V, VGS = 0, f = 100MHz
–
–
100
µmhos
VDS = 15V, VGS = 0, f = 400MHz
–
–
1000 µmhos
VDS = 15V, VGS = 0, f = 1kHz
–
–
50
µmhos
VDS = 15V, VGS = 0, f = 100MHz
–
–
75
µmhos
VDS = 15V, VGS = 0, f = 400MHz
–
–
100
µmhos
VDS = 15V, VGS = 0, f = 100MHz
–
–
2500 µmhos
VDS = 15V, VGS = 0, f = 400MHz
–
–
VDS = 15V, VGS = 0, f = 100MHz
–
–
1000 µmhos
VDS = 15V, VGS = 0, f = 400MHz
–
–
4000 µmhos
Small–Signal Characteristics (Cont’d)
Real Part of Input Admittance
Output Admittance
Real Part of Output Admittance
Imaginary Part of Input Admittance
Imaginary Part of Output
Admittance
Yis(real)
|Yos|
Yos(real)
Yis(imag)
Yos(imag)
10k
µmhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
–
–
4.0
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
–
–
0.8
pF
Common–Source Output
Capacitance
Coss
VDS = 15V, VGS = 0, f = 1MHz
–
–
2.0
pF
NF
VDS = 15V, ID = 5mA, Rg ∼ 1000Ω,
f = 100MHz
–
–
2.0
dB
VDS = 15V, ID = 5mA, Rg ∼ 1000Ω,
f = 400MHz
–
–
4.0
dB
VDS = 15V, ID = 5mA, f = 100MHz
18
–
–
dB
VDS = 15V, ID = 5mA, f = 400MHz
10
–
–
dB
Functional Characteristics
Noise Figure
Small–Signal Power Gain
Common–Source
Gps
.220 (5.58) Dia
.185 (4.7) Dia
.190
(4.82)
.030 (.762)
.500
(12.7)
Min
.018 (0.45) Dia
Drain
Source
Gate
45°
Case
.040 (1.02)