NTE NTE312

NTE312
N–Channel Silicon Junction
Field Effect Transistor
Description:
The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The
NTE312 comes in a TO–92 package.
Features:
D High Power Gain: 10dB Min at 400MHz
D High Transconductance: 4000 µmho Min at 400MHz
D Low Crss: 1pF Max
D High (Yfs) / Ciss Ratio (High–Frequency Figure–of–Merit)
D Drain and Gate Leads Separated for High Maximum Stable Gain
D Cross–Modulation Minimized by Square–Law Transfer Characteristic
D For Use in VHF Amplifiers in FM, TV, and Mobile Communications Equipment
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –30V
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipation (TA = +25°C ), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.88mW/°C
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature, During Soldering (1/16 Inch from Case for 10sec), TL . . . . . . . . . . . . . . . +260°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V(BR)GSS
IG = –1.0µA, VDS = 0
–30
–
–
V
Gate Reverse Current
IGSS
VGS = –20V, VDS = 0
–
–
–1.0
nA
Gate 1 Leakage Current
IG1SS
VG1S = –20V, VDS = 0, TA = +100°C
–
–
–0.5
µA
VDS = 15V, ID = 10mA
–1.0
–
–6.0
V
IDSS
VDS = 15V, VGS = 0, Note 1
5.0
–
15
mA
|yfs|
VDS = 15V, VGS = 0, f = 1kHz
4500
–
7500
µmhos
Re(yis)
100MHz VDS = 15V, VGS = 0
–
–
100
µmhos
400MHz
–
–
1000
µmhos
|yos|
VDS = 15V, VGS = 0, f = 1kHz
–
–
50
µmhos
Re(yos)
100MHz VDS = 15V, VGS = 0
–
–
75
µmhos
400MHz
–
–
100
µmhos
Gate–Source Cutoff Voltage
VGS(off)
ON Characteristics
Zero–Gate Voltage Drain Current
Small–Signal Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
Re(yfs)
VDS = 15V, VGS = 0, f = 400MHz
4000
–
–
µmhos
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1.0MHz
–
–
4.5
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1.0MHz
–
–
1.0
pF
100MHz VDS = 15V, VGS = 0
–
–
3.0
mmho
400MHz
–
–
12.0
mmho
100MHz VDS = 15V, ID = 5mA,
Ω
RiiG = 1kΩ
400MHz
–
–
2.0
dB
–
–
4.0
dB
100MHz VDS = 15V, ID = 5mA,
Ω
RiiG = 1kΩ
400MHz
18
–
–
dB
10
–
–
dB
100MHz VDS = 15V, VGS = 0
–
–
1000
µmhos
400MHz
–
–
4000
µmhos
Forward Transconductance
Input Susceptance
IM(Yis)
Functional Characteristics
Noise Figure
Common Source Power Gain
Output Susceptance
NF
Gps
IM(Yos)
Note 1. tp = 100ms, Duty Cycle = 10%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
G S D
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
NOTE: Drain and Source are interchangeable.