NTE NTE458

NTE458
N–Channel Silicon JFET
General Purpose, Low Noise, Audio Frequency Amplifier
Features:
D Very Low Noise
D Low Gate Current
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Gate–Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Gate–Source Voltage, VGSO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50V
Drain–Source Voltage (VDS = –2V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +125°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Reverse Current
IGSS
VGS = –20V, VDS = 0
–
–
–1
nA
Zero–Gate Voltage Drain Current
IDSS
VDS = 10V, VGS = 0
0.5
3.0
12
mA
Gate–Source Voltage
Forward Transconductance
VGS(off) VDS = 10V, ID = 10µA
gfs
–0.13 –0.5 –1.5
V
VDS = 10V, ID = 0.5mA, f = 1kHz
4.0
5.2
–
mhos
VDS = 10V, VGS = 0, f = 1MHz
4.0
12
–
mhos
Input Capacitance
Ciss
VDS = 10V, VGS = 0, f = 1MHz
–
13
–
pF
Reverse Transfer Capacitance
Crss
VDS = 10V, VGS = 0, f = 1MHz
–
2.6
–
pF
Noise Frequency
NF
VDS = 10V, VGS = 0, RG = 1kΩ,
f = 10Hz
–
5.0
10
dB
VDS = 10V, VGS = 0, RG = 1kΩ,
f = 100Hz
–
1.0
3.0
dB
VDS = 10V, VGS = 0, RG = 1kΩ,
f = 1kHz
–
0.6
1.5
dB
ID = 0.5mA, RG = 1kΩ,
f = 10Hz to 1kHz (at VG = –3dB)
–
15
20
mV
Noise Voltage
NV
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D G S
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max