2917

NTE2917
MOSFET
Silicon N−Channel JFET Transistor
w/Internal Diode for ECM Impedance
Converter Applications
TO92S Type Package
Features:
D Compact Package
D High Forward Transfer Admittance
D Low Capacitance
D Includes Diode and High Resistance at G − S
D
G
S
Absolute Maximum Ratings:
Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Gate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1255C
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Zero Gate Voltage Drain Cutoff Current
IDSS
VGS(off)
Gate Cutoff Voltage
Forward Transfer Admittance
|yfs|
Test Conditions
Min
Typ
Max
Unit
VDS = 5V, VGS = 0V
60
−
500
mA
VGS = 5V, ID = 1.0mA
−
−
−1.0
V
VDS = 5V, ID = 30mA, f = 1kHz
150
−
−
ms
VDS = 5V, VGS = 0V, f = 1kHz
150
1200
−
ms
VGS = 0V, VDS = 5V, f = 1MHz
−
4.5
6.0
pF
Input Capacitance
Ciss
Output Capacitance
Coss
−
1.5
3.0
pF
Reverse Transfer Capacitance
Crss
−
1.2
3.0
pF
Noise Voltage
NV
−
1.0
3.0
mV
.157 (4.0)
.118
(3.0)
.063
(1.6)
.492
(12.5)
Min
D
G
S
.050 (1.27)
.050 (1.27)
.079
(2.0)
.053 (1.35)