NTE2917 MOSFET Silicon N−Channel JFET Transistor w/Internal Diode for ECM Impedance Converter Applications TO92S Type Package Features: D Compact Package D High Forward Transfer Admittance D Low Capacitance D Includes Diode and High Resistance at G − S D G S Absolute Maximum Ratings: Drain−to−Source Voltage (VGS = −1.0V), VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate−to−Drain Voltage, VGDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −20V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1255C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1255C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Zero Gate Voltage Drain Cutoff Current IDSS VGS(off) Gate Cutoff Voltage Forward Transfer Admittance |yfs| Test Conditions Min Typ Max Unit VDS = 5V, VGS = 0V 60 − 500 mA VGS = 5V, ID = 1.0mA − − −1.0 V VDS = 5V, ID = 30mA, f = 1kHz 150 − − ms VDS = 5V, VGS = 0V, f = 1kHz 150 1200 − ms VGS = 0V, VDS = 5V, f = 1MHz − 4.5 6.0 pF Input Capacitance Ciss Output Capacitance Coss − 1.5 3.0 pF Reverse Transfer Capacitance Crss − 1.2 3.0 pF Noise Voltage NV − 1.0 3.0 mV .157 (4.0) .118 (3.0) .063 (1.6) .492 (12.5) Min D G S .050 (1.27) .050 (1.27) .079 (2.0) .053 (1.35)