NTE132 Silicon N–Channel JFET Transistor VHF Amplifier, Mixer Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25V Gate Current, IG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Lead Temperature (During Soldering, 1/16” from case for 10sec), TL . . . . . . . . . . . . . . . . . . . +260°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Min Typ Max Unit –25 – – V VGS = 15V, VDS = 0 – – –2 nA VGS = 15V, VDS = 0, TA = +100°C – – –2 nA VGS(off) ID = 2nA, VDS = 15V – – –8 V Gate–Source Voltage VGS ID = 50µA, VDS = 15V –0.5 – –7.5 V Zero–Gate–Voltage Drain Current IDSS VDS = 15V, VGS = 0 2 – 20 mA Gate–Source Breakdown Voltage Gate Reverse Current Gate–Source Cutoff Voltage Symbol Test Conditions V(BR)GSS IG = 1µA, VDS = 0 IGSS Forward Transconductance gfs VDS = 15V, VGS = 0, f = 1kHz 2500 – 7000 µmho Forward Transfer Admittance |yfs| VDS = 15V, VGS = 0, f = 100MHz 2000 – – µmho Output Admittance |yos| VDS = 15V, VGS = 0, f = 1kHz – – 50 µmho .207 (5.28) Dia .060 (1.52) Min .180 (4.57) .500 (12.7) Min Seating Plane .018 (0.45) .100 (2.54) Dia Drain Source Gate