NTE NTE451

NTE451
Silicon N–Channel JFET Transistor
VHF/UHF Amplifier
Absolute Maximum Ratings:
Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–25
–
–
V
VGS = –20V, VDS = 0
–
–
–1.0
nA
VGS = –20V, VDS = 0, TA = +100°C
–
–
–0.2
nA
–0.5
–
–4.0
V
4
–
20
mA
3500
–
7000
µmho
VDS = 15V, VGS = 0, f = 400MHz
–
–
1000
µmho
VDS = 15V, VGS = 0, f = 1kHz
–
–
60
µmho
Re(yos)
VDS = 15V, VGS = 0, f = 400MHz
–
–
100
µmho
Forward Transconductance
gfs
VDS = 15V, VGS = 0, f = 400MHz
3000
–
–
µmho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
–
–
5
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
–
–
1
pF
Output Capacitance
Coss
VDS = 15V, VGS = 0, f = 1MHz
–
–
2
pF
OFF Characteristics
Gate–Source Breakdown Voltage
Gate Reverse Current
Gate–Source Cutoff Voltage
V(BR)GSS IG = –1µA, VDS = 0
IGSS
VGS(off)
ID = 10nA, VDS = 15V
ON Characteristics
Zero–Gate–Voltage Drain Current
IDSS
VDS = 15V, VGS = 0
Small Signal Characteristics Characteristics
Forward Transfer Admittance
Input Admittance
Output Admittance
Output Conductance
|yfs|
Re(yis)
|yos|
VDS = 15V, VGS = 0, f = 1kHz
Electrical Characteristics Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Functional Characteristics
Noise Figure
NF
Common Source Power Gain
Gps
VDS = 15V, ID = 4mA,
RG 1kΩ
Ω
f = 100MHz
–
–
2
dB
f = 400MHz
–
–
4
dB
VDS = 15V, ID = 4mA
f = 100MHz
18
–
30
dB
f = 400MHz
10
–
20
dB
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
D S G
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max