NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 100W (PEP) Minimum Gain = 10dB Efficiency = 40% D Intermodulation Distortion @ 100W (PEP): IMD = –30dB Min D 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Withstand Current (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.66W/°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit V(BR)CEO IC = 50mA, IB = 0 20 – – V V(BR)CES IC = 200mA, VBE = 0 45 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 200mA, IE = 0 45 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10mA, IC = 0 3 – – V – – 10 mA OFF Characteristics Collector–Emitter Breakdown Voltage Collector Cutoff Current ICES VCE = 16V, VBE = 0, TC = +25°C Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain hFE IC = 5A, VCE = 5V 10 30 – Cob VCB = 12.5V, IE = 0, f = 1MHz – 650 800 pF GPE VCC = 12.5V, Pout = 100W, IC(max) = 10A, ICQ = 150mA, f = 30, 30.001MHz 10 12 – dB 40 – – % – –33 –30 dB Dynamic Characteristics Output Capacitance Functional Tests Common–Emitter Amplifier Power Gain η Collector Efficiency Intermodulation Distortion (Note 1) IMD Note 1. To proposed EIA method of measurement. Reference peak envelope power. .725 (18.42) .127 (3.17) Dia (2 Holes) E C B E .250 (6.35) .225 (5.72) 1.061 (26.95) Ceramic Cap .480 (12.1) Dia .260 (6.6) .065 (1.68) .975 (24.77) .095 (2.42)