TI TPS54310QPWPRQ1

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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
!"
FEATURES
D Qualification in Accordance With AEC-Q100(1)
D Qualified for Automotive Applications
D Customer-Specific Configuration Control Can
D
D
D
D
D
D
D
Be Supported Along With Major-Change
Approval
60-mΩ MOSFET Switches for High Efficiency
at 3-A Continuous Output Source or Sink
Current
0.9-V to 3.3-V Adjustable Output Voltage With
1% Accuracy
Externally Compensated for Design Flexibility
Fast Transient Response
Wide PWM Frequency: Fixed 350 kHz,
550 kHz, or Adjustable 280 kHz to 700 kHz
Load Protected by Peak Current Limit and
Thermal Shutdown
Integrated Solution Reduces Board Area and
Total Cost
DESCRIPTION
As members of the SWIFT family of dc/dc regulators,
the TPS54310 low-input-voltage high-output-current
synchronous-buck PWM converter integrates all
required active components. Included on the substrate
with the listed features are a true, high-performance,
voltage error amplifier that provides high performance
under transient conditions, an undervoltage-lockout
circuit to prevent start up until the input voltage reaches
3 V, an internally and externally set slow-start circuit to
limit in-rush currents, and a power good output useful
for processor/logic reset, fault signaling, and supply
sequencing.
The TPS54310 device is available in a thermally
enhanced 20-pin TSSOP (PWP) PowerPAD
package, which eliminates bulky heatsinks. Texas
Instruments provides evaluation modules and the
SWIFT designer software tool to aid in quickly achieving
high-performance power supply designs to meet
aggressive equipment development cycles.
(1) Contact Texas Instruments for details. Q100 qualification data
available on request.
APPLICATIONS
D Point of Load Regulation for High
D
D
Performance DSPs, FPGAs, ASICs, and
Microprocessors
Automotive Systems
− Navigation Units
− Entertainment Modules
− Satellite Radio
Industrial High-Density Systems With Power
Distributed at 5 V or 3.3 V
ORDERING INFORMATION
TJ
OUTPUT VOLTAGE
PACKAGED DEVICES
PLASTIC HTSSOP
(PWP)(1)
−40°C to 125°C
0.9 V to 3.3 V
TPS54310QPWPRQ1
(1) The PWP package is taped and reeled as indicated by the R suffix to the device type (i.e., TPS54310QPWPRQ1). See the Application section
of the data sheet for PowerPAD drawing and layout information.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD and SWIFT are trademarks of Texas Instruments.
#$%&'()*#&$ # +,''-$* ) &% .,/0#+)*#&$ 1)*-2 '&1,+*
+&$%&'( *& .-+#%#+)*#&$ .-' *3- *-'( &% -4) $*',(-$* *)$1)'1 5)'')$*62
'&1,+*#&$ .'&+-#$7 1&- $&* $-+-)'#06 #$+0,1- *-*#$7 &% )00 .)')(-*-'2
Copyright  2007, Texas Instruments Incorporated
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
EFFICIENCY
vs
LOAD CURRENT
Simplified Schematic
Input
VIN
Output
PH
96
TPS54310
94
BOOT
92
Efficiency − %
PGND
COMP
VBIAS
VSENSE
90
88
86
84
AGND
Compensation
Network
TA = 25°C
VI = 5 V
VO = 3.3 V
82
80
0
0.5
1
1.5
2
2.5
3
Load Current − A
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
Input voltage range, VI
Output voltage range, VO
TPS54310-Q1
UNIT
VIN, SS/ENA, FSEL
−0.3 to 7
V
RT
−0.3 to 6
V
VSENSE
−0.3 to 4
V
BOOT
−0.3 to 17
V
VBIAS, PWRGD, COMP
−0.3 to 7
V
PH
−0.6 to 10
V
PH
Source current, IO
Sink current
COMP, VBIAS
6
PH
6
A
COMP
6
mA
10
mA
±0.3
V
SS/ENA,PWRGD
Voltage differential
Internally Limited
AGND to PGND
mA
Continuous power dissipation
See Power Dissipation
Rating Table
Operating virtual junction temperature range, TJ
−40 to 150
°C
Storage temperature, Tstg
−65 to 150
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
300
°C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
RECOMMENDED OPERATING CONDITIONS
MIN
Input voltage range, VI
Operating junction temperature, TJ
NOM
MAX
UNIT
3
6
V
−40
125
°C
PACKAGE DISSIPATION RATINGS(1) (2)
20-pin PWP with solder
26°C/W
TA = 25°C
POWER RATING
3.85 W(3)
20-pin PWP without solder
57.5°C/W
1.73 W
PACKAGE
THERMAL IMPEDANCE
JUNCTION-TO-AMBIENT
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
2.12 W
1.54 W
0.96 W
0.69 W
(1) For more information on the PWP package, see the Texas Instruments technical brief (SLMA002).
(2) Test board conditions:
1. 3” × 3”, 2 layers, Thickness: 0.062”
2. 1.5 oz copper traces located on the top of the PCB
3. 1.5 oz copper ground plane on the bottom of the PCB
4. Ten thermal vias (see the recommended land pattern in application section of this data sheet)
(3) Maximum power dissipation may be limited by overcurrent protection.
3
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
ELECTRICAL CHARACTERISTICS
TJ = −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY VOLTAGE, VIN
VIN input voltage range
Quiescent current
3
6
fs = 350 kHz, FSEL ≤ 0.8 V, RT open, phase
pin open
6.2
9.6
fs = 550 kHz, FSEL ≥ 2.5 V, RT open, phase
pin open
8.4
12.8
1
1.4
2.95
3
Shutdown, SS/ENA = 0 V
V
mA
UNDER VOLTAGE LOCK OUT
Start threshold voltage, UVLO
Stop threshold voltage, UVLO
2.7
Hysteresis voltage, UVLO
Rising and falling edge deglitch, UVLO(1)
2.8
V
0.16
V
2.5
µs
BIAS VOLTAGE
VO
Output voltage, VBIAS
Output current, VBIAS(2)
I(VBIAS) = 0
2.7
CUMULATIVE REFERENCE
Vref
Accuracy(1)
0.882
2.8
0.891
2.95
V
100
µA
0.900
V
REGULATION
Line regulation(1) (3)
IL = 1.5 A, fs = 350 kHz, TJ = 125°C
IL = 1.5 A, fs = 550 kHz, TJ = 125°C
0.07
Load regulation (1) (3)
IL = 0 A to 3 A, fs = 350 kHz, TJ = 125°C
IL = 0 A to 3 A, fs = 550 kHz, TJ = 125°C
0.03
0.07
0.03
%/V
%/A
OSCILLATOR
Internally set free-running frequency range
Externally set free-running frequency range
High-level threshold voltage, FSEL
Low-level threshold voltage, FSEL
Pulse duration, FSEL(1)
Frequency range, FSEL(1) (4)
Ramp valley(1)
FSEL ≤ 0.8 V,
RT open
265
350
440
FSEL ≥ 2.5 V,
RT open
415
550
680
RT = 180 kΩ (1% resistor to AGND)(1)
252
280
308
RT = 160 kΩ (1% resistor to AGND)
RT = 68 kΩ (1% resistor to AGND)(1)
290
312
350
663
700
762
2.5
Maximum duty cycle(1)
50
V
ns
330
700
0.75
kHz
V
1
V
200
90%
(1) Specified by design
(2) Static resistive loads only
(3) Specified by the circuit used in Figure 10.
(4) To ensure proper operation when RC filter is used between external clock and FSEL pin, the recommended values are R ≤ 1kΩ and
C ≤ 120 pF.
4
kHz
V
0.8
Ramp amplitude (peak-to-peak)(1)
Minimum controllable on time(1)
kHz
ns
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
ELECTRICAL CHARACTERISTICS (continued)
TJ = −40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ERROR AMPLIFIER
Error amplifier open loop voltage gain
1-kΩ COMP to AGND(1)
90
110
Error amplifier unity gain bandwidth
Parallel 10 kΩ, 160 pF COMP to AGND (1)
3
5
Powered by internal LDO(1)
0
IIB
Error amplifier common-mode input voltage
range
Input bias current, VSENSE(1)
VO
Output voltage slew rate (symmetric),
COMP(1)
VSENSE = Vref
60
1
dB
MHz
VBIAS
V
250
nA
1.4
V/µs
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
dead time)
10-mV overdrive(1)
70
85
ns
1.2
1.4
V
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
0.82
Enable hysteresis voltage, SS/ENA(1)
Falling edge deglitch, SS/ENA(1)
Internal slow-start time(1)
0.03
V
2.5
µs
2.6
3.35
4.1
Charge current, SS/ENA
SS/ENA = 0 V
2.5
5
8
ms
µA
Discharge current, SS/ENA
SS/ENA = 0.2 V, VI = 2.7 V
1.2
2.3
4
mA
POWER GOOD
Power good threshold voltage
VSENSE falling
90
Power good hysteresis voltage(1)
Power good falling edge deglitch(1)
Output saturation voltage, PWRGD
Leakage current, PWRGD
%Vref
%Vref
3
µs
35
I(sink) = 2.5 mA
VI = 5.5 V
0.18
0.3
1
V
µA
CURRENT LIMIT
Current limit trip point
VI = 3 V, output shorted(1)
VI = 6 V, output shorted(1)
4
6.5
4.5
7.5
A
Current limit leading edge blanking time
100
ns
Current limit total response time
200
ns
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
Thermal shutdown hysteresis(1)
135
150
165
°C
°C
10
OUTPUT POWER MOSFETS
rDS(on)
Power MOSFET switches
IO = 3 A,
IO = 3 A,
VI = 6 V(2)
VI = 3 V(2)
59
88
85
136
mΩ
(1) Specified by design
(2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design
5
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
PIN ASSIGNMENTS
PWP PACKAGE
(TOP VIEW)
AGND
VSENSE
COMP
PWRGD
BOOT
PH
PH
PH
PH
PH
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
RT
FSEL
SS/ENA
VBIAS
VIN
VIN
VIN
PGND
PGND
PGND
Terminal Functions
TERMINAL
NAME
DESCRIPTION
NO.
AGND
1
Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor, and
FSEL pin. Make PowerPAD connection to AGND.
BOOT
5
Bootstrap input. A 0.022-µF to 0.1-µF low-ESR capacitor connected from BOOT to PH generates floating drive for the
high-side FET driver.
COMP
3
Error amplifier output. Connect the compensation network from COMP to VSENSE.
PGND
11−13
Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas to the
input and output supply returns and negative terminals of the input and output capacitors.
PH
6−10
Phase input/output. Junction of the internal high and low-side power MOSFETs and output inductor.
PWRGD
4
Power good open drain output. High when VSENSE ≥ 90% Vref, otherwise PWRGD is low. Note that output is low when
SS/ENA is low or internal shutdown signal active.
RT
20
Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency, fs.
SS/ENA
18
Slow-start/enable input/output. Dual function pin which provides logic input to enable/disable device operation and capacitor
input to externally set the start-up time.
FSEL
19
Synchronization input. Dual function pin which provides logic input to synchronize to an external oscillator or pin select
between two internally set switching frequencies. When used to synchronize to an external signal, a resistor must be
connected to the RT pin.
VBIAS
17
Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a high
quality, low ESR 0.1-µF to 1-µF ceramic capacitor.
14−16
Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to the device
package with a high quality, low ESR 1-µF to 10-µF ceramic capacitor.
VIN
VSENSE
6
2
Error amplifier inverting input.
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
FUNCTIONAL BLOCK DIAGRAM
VBIAS
AGND
VIN
Enable
Comparator
SS/ENA
Falling
Edge
Deglitch
1.2 V
Hysteresis: 0.03
V
2.5 µs
VIN UVLO
Comparator
2.95 V
Hysteresis: 0.16
V
VIN
ILIM
Comparator
Thermal
Shutdown
150°C
3−6V
Leading
Edge
Blanking
Falling
and
Rising
Edge
Deglitch
VIN
REG
VBIAS
SHUTDOWN
100 ns
BOOT
30 mΩ
2.5 µs
SS_DIS
SHUTDOWN
Internal/External
Slow-start
(Internal Slow-start Time = 3.35 ms
PH
+
−
R Q
S
Error
Amplifier
Reference
VREF = 0.891 V
PWM
Comparator
LOUT
VO
CO
Adaptive Dead-Time
and
Control Logic
VIN
30 mΩ
OSC
PGND
Powergood
Comparator
PWRGD
VSENSE
Falling
Edge
Deglitch
0.90 Vref
TPS54310
Hysteresis: 0.03 Vref
VSENSE
COMP
RT
SHUTDOWN
35 µs
FSEL
ADDITIONAL 3-A SWIFT DEVICES
DEVICE
OUTPUT VOLTAGE
DEVICE
OUTPUT VOLTAGE
DEVICE
OUTPUT VOLTAGE
TPS54311
0.9 V
TPS54313
1.5 V
TPS54315
2.5 V
TPS54312
1.2 V
TPS54314
1.8 V
TPS54316
3.3 V
RELATED DC/DC PRODUCTS
D UCC3585—dc/dc controller
D PT5500 series—3-A plug-in modules
D TPS757XX—3-A low dropout regulator
7
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
TYPICAL CHARACTERISTICS
DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
100
IO = 3 A
80
60
40
20
VI = 5 V
0
25
85
IO = 3 A
80
60
40
20
0
−40
0
−40
125
TJ − Junction Temperature − °C
0
25
800
600
RT = 100 k
500
400
RT = 180 k
300
0.893
0.891
0.889
0.887
−80
−120
40
Gain
20
−140
−160
0
−180
−20
−200
10 k 100 k 1 M 10 M
0
10
100
1k
f − Frequency − Hz
Figure 7
Internal Slow-Start Time − ms
−40
−100
60
f = 350 kHz
0.8870
0
25
85
3
125
4
5
VI − Input Voltage − V
6
Figure 6
DEVICE POWER LOSSES
vs
LOAD CURRENT
3.80
2.25
3.65
2
−20
−60
Phase
0.8890
INTERNAL SLOW-START TIME
vs
JUNCTION TEMPERATURE
Phase − Degrees
RL= 10 kΩ,
CL = 160 pF,
TA = 25°C
125
0.8910
Figure 5
0
140
85
0.8930
TJ − Junction Temperature − °C
ERROR AMPLIFIER
OPEN LOOP RESPONSE
25
0.8850
0.885
−40
125
Figure 4
80
0
TA = 85°C
Device Power Losses − W
85
100
250
−40
0.8950
TJ − Junction Temperature − °C
120
350
OUTPUT VOLTAGE REGULATION
vs
INPUT VOLTAGE
VO − Output Voltage Regulation − V
700
25
FSEL ≤ 0.8 V
Figure 3
0.895
0
450
TJ − Junction Temperature − °C
RT = 68 k
200
−40
FSEL ≥ 2.5 V
550
VOLTAGE REFERENCE
vs
JUNCTION TEMPERATURE
Vref − Voltage Reference − V
f − Externally Set Oscillator Frequency − kHz
125
650
Figure 2
EXTERNALLY SET OSCILLATOR
FREQUENCY
vs
JUNCTION TEMPERATURE
Gain − dB
85
750
TJ − Junction Temperature − °C
Figure 1
8
f − Internally Set Oscillator Frequency −kHz
100
Drain-Source On-State Resistance − Ω
Drain-Source On-State Resistance − Ω
120
VI = 3.3 V
INTERNALLY SET OSCILLATOR
FREQUENCY
vs
JUNCTION TEMPERATURE
DRAIN-SOURCE ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
3.50
3.35
3.20
3.05
TJ − 125°C
fs = 700 kHz
1.75
1.5
VI = 3.3 V
1.25
1
VI = 5 V
0.75
0.5
2.90
0.25
2.75
−40
0
25
85
TJ − Junction Temperature − °C
Figure 8
125
0
0
1
2
3
IL − Load Current − A
Figure 9
4
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
APPLICATION INFORMATION
Figure 10 shows the schematic diagram for a typical
TPS54310 application. The TPS54310 (U1) can provide
up to 3 A of output current at a nominal output voltage of
J1
VI
GND
3.3 V. For proper thermal performance, the power pad
underneath the TPS54310 integrated circuit needs to be
soldered well to the printed circuit board.
VIN
2
1
C2
+
R3
1
R1
10 kΩ
71.5 kΩ
U1
TPS54310PWP
20
19
18
17
C3
0.1 µF
4
PWRGD
RT
VIN
SS/ENA
2
PH
C5
3900 pF
C4
100 pF
R2
3.74 kΩ
9
PH
3 COMP
6
5
BOOT
13
PGND
AGND
PGND
GND
C11
1000 pF
C7
0.047 µF
11
PGND
PwrPAD
2700 pF
R5
C9
180 µF
4V
VO
12
C6
R4
3.74 kΩ
J3
2
+
8
7
PH
VSENSE
1
10
PH
VBIAS
PWRGD
L1
1.2 µH
14
VIN
PH
1
15
VIN
FSEL
C8
10 µF
16
R6
R7
732 Ω
49.9 Ω
10 kΩ
1
Optional
Figure 10. TPS54310 Schematic
INPUT VOLTAGE
OUTPUT FILTER
The input to the circuit is a nominal 5 VDC, applied at J1.
The optional input filter (C2) is a 220-µF POSCAP
capacitor, with a maximum allowable ripple current of 3 A.
C8 is the decoupling capacitor for the TPS54310 and must
be located as close to the device as possible.
The output filter is composed of a 1.2-µH inductor and
180-µF capacitor. The inductor is a low dc-resistance
(0.017 Ω) type, Coilcraft DO1813P-122HC. The capacitor
used is a 4-V special polymer type with a maximum ESR
of 0.015 Ω. The feedback loop is compensated so that the
unity gain frequency is approximately 75 kHz.
FEEDBACK CIRCUIT
GROUNDING AND PowerPAD LAYOUT
The resistor divider network of R5 and R4 sets the output
voltage for the circuit at 3.3 V. R5, along with R2, R6, C4,
C5, and C6 forms the loop compensation network for the
circuit. For this design, a Type 3 topology is used.
The TPS54310 has two internal grounds (analog and
power). Inside the TPS54310, the analog ground ties to all
of the noise sensitive signals, while the power ground ties
to the noisier power signals. The PowerPAD must be tied
directly to AGND. Noise injected between the two grounds
can degrade the performance of the TPS54310,
particularly at higher output currents. However, ground
noise on an analog ground plane can also cause problems
with some of the control and bias signals. For these
reasons, separate analog and power ground planes are
recommended. These two planes should tie together
directly at the IC to reduce noise between the two grounds.
The only components that should tie directly to the power
ground plane are the input capacitor, the output capacitor,
the input voltage decoupling capacitor, and the PGND pins
of the TPS54310. The layout of the TPS54310 evaluation
module is representative of a recommended layout for a
OPERATING FREQUENCY
In the application circuit, the 350-kHz operation is selected
by leaving RT and FSEL open. Connecting a 68-kΩ to
180-kΩ resistor between RT (pin 20) and analog ground
can be used to set the switching frequency from 280 kHz
to 700 kHz. To calculate the RT resistor, use
equation 1:
R + 100 kW
ƒ
SW
500 kHz
(1)
9
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
2-layer board. Documentation for the TPS54310
evaluation module can be found on the Texas Instruments
web site under the TPS54310 product folder and in the
application note (SLVA109).
LAYOUT CONSIDERATIONS FOR THERMAL
PERFORMANCE
For operation at full rated load current, the analog ground
plane must provide adequate heat dissipating area. A
3 inch by 3 inch plane of 1 ounce copper is recommended,
though not mandatory, depending on ambient temperature
and airflow. Most applications have larger areas of internal
6 PL ∅ 0.0130
4 PL ∅ 0.0180
Connect Pin 1 to Analog Ground Plane
in This Area for Optimum Performance
0.0227
0.0600
0.0400
0.2560
0.2454
0.0400
0.0600
Minimum Recommended Top
Side Analog Ground Area
ground plane available and the PowerPAD should be
connected to the largest area available. Additional areas
on the top or bottom layers also help dissipate heat, and
any area available should be used when 3 A or greater
operation is desired. Connection from the exposed area of
the PowerPAD to the analog ground plane layer should be
made using 0.013 inch diameter vias to avoid solder
wicking through the vias. Six vias should be in the
PowerPAD area with four additional vias located under the
device package. The size of the vias under the package,
but not in the exposed thermal pad area, can be increased
to 0.018. Additional vias beyond the 10 recommended that
enhance thermal performance should be included in areas
not under the device package.
Minimum Recommended Thermal Vias: 6 × 0.013 dia.
Inside Powerpad Area 4 × 0.018 dia. Under Device as
Shown. Additional 0.018 dia. Vias May be Used if Top Side
Analog Ground Area is Extended.
ÓÓÓ
ÓÓÓ
ÓÓÓ
ÓÓÓ
ÓÓÓ
ÓÓÓ
ÓÓÓ
0.0150
0.06
0.1010
0.0256
0.1700
0.1340
0.0620
0.0400
Minimum Recommended Exposed
Copper Area For Powerpad. 5mm
Stencils may Require 10 Percent
Larger Area
Figure 11. Recommended Land Pattern for 20-Pin PWP PowerPAD
10
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SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
PERFORMANCE GRAPHS
OUTPUT VOLTAGE
vs
LOAD CURRENT
EFFICIENCY
vs
OUTPUT CURRENT
VI = 5 V
3.38
90
VI = 6 V
85
80
75
70
135
Phase
40
90
3.36
3.34
Gain − dB
VO − Output Voltage − %
95
3.32
3.3
45
20
Gain
0
0
TA = 25°C
3.28
−45
−20
3.26
0
1
2
3
4
−40
3.24
5
0
1
2
3
4
5
100
Figure 12
Figure 13
OUTPUT RIPPLE VOLTAGE
VI = 5 V
40 µs/div
10 k
100 k
−90
1M
Figure 14
LOAD TRANSIENT RESPONSE
VO (AC)
10 mV/div
1k
f − Frequency − Hz
IL − Load Current − A
IO − Output Current − A
SLOW-START TIMING
VO (AC)
50 mV/div
VI 2 V/div
VO 2 V/div
VPWRGD 5 V/div
IO
2 A/div
VI = 5 V
IO = 3 A
400 ns/div
1 ms/div
Figure 16
Figure 15
Figure 17
AMBIENT TEMPERATURE
vs
LOAD CURRENT
125
115
T A − Ambient Temperature − ° C
Efficiency − %
TA = 25°C
VI = 5 V
Phase − Degrees
VI = 4 V
65
LOOP RESPONSE
60
3.4
100
VI = 5 V
105
95
85
VI = 3.3 V
75
Safe Operating Area†
65
55
45
35
25
0
1
2
3
IL − Load Current − A
4
† The safe operating area is applicable to the test board
conditions listed in the Dissipation Rating Table section of
this data sheet.
Figure 18
11
www.ti.com
SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
DETAILED DESCRIPTION
Under Voltage Lock Out (UVLO)
The TPS54310 incorporates an under voltage lockout
circuit to keep the device disabled when the input voltage
(VIN) is insufficient. During power up, internal circuits are
held inactive until VIN exceeds the nominal UVLO
threshold voltage of 2.95 V. Once the UVLO start threshold
is reached, device start-up begins. The device operates
until VIN falls below the nominal UVLO stop threshold of
2.8 V. Hysteresis in the UVLO comparator and a 2.5-µs
rising and falling edge deglitch circuit reduce the likelihood
of shutting the device down due to noise on VIN.
Slow-Start/Enable (SS/ENA)
The slow-start/enable pin provides two functions; first, the
pin acts as an enable (shutdown) control by keeping the
device turned off until the voltage exceeds the start
threshold voltage of approximately 1.2 V. When SS/ENA
exceeds the enable threshold, device start up begins. The
reference voltage fed to the error amplifier is linearly
ramped up from 0 V to 0.891 V in 3.35 ms. Similarly, the
converter output voltage reaches regulation in
approximately 3.35 ms. Voltage hysteresis and a 2.5-µs
falling edge deglitch circuit reduce the likelihood of
triggering the enable due to noise.
The second function of the SS/ENA pin provides an
external means of extending the slow-start time with a
low-value capacitor connected between SS/ENA and
AGND. Adding a capacitor to the SS/ENA pin has two
effects on start-up. First, a delay occurs between release
of the SS/ENA pin and start up of the output. The delay is
proportional to the slow-start capacitor value and lasts until
the SS/ENA pin reaches the enable threshold. The
start-up delay is approximately:
td + C
(SS)
1.2 V
5 mA
(2)
Second, as the output becomes active, a brief ramp-up at
the internal slow-start rate may be observed before the
externally set slow-start rate takes control and the output
rises at a rate proportional to the slow-start capacitor. The
slow-start time set by the capacitor is approximately:
VBIAS pin. X7R or X5R grade dielectrics are
recommended because their values are more stable over
temperature. The bypass capacitor should be placed close
to the VBIAS pin and returned to AGND. External loading
on VBIAS is allowed, with the caution that internal circuits
require a minimum VBIAS of 2.7 V, and external loads on
VBIAS with ac or digital switching noise may degrade
performance. The VBIAS pin may be useful as a reference
voltage for external circuits.
Voltage Reference
The voltage reference system produces a precise Vref
signal by scaling the output of a temperature stable
bandgap circuit. During manufacture, the bandgap and
scaling circuits are trimmed to produce 0.891 V at the
output of the error amplifier, with the amplifier connected
as a voltage follower. The trim procedure adds to the high
precision regulation of the TPS54310, since it cancels
offset errors in the scale and error amplifier circuits.
Oscillator and PWM Ramp
The oscillator frequency can be set to internally fixed
values of 350 kHz or 550 kHz using the FSEL pin as a static
digital input. If a different frequency of operation is required
for the application, the oscillator frequency can be
externally adjusted from 280 kHz to 700 kHz by connecting
a resistor to the RT pin to ground and floating the FSEL pin.
The switching frequency is approximated by the following
equation, where R is the resistance from RT to AGND:
SWITCHING FREQUENCY + 100 kW
R
500 kHz
(4)
External synchronization of the PWM ramp is possible
over the frequency range of 330 kHz to 700 kHz by driving
a synchronization signal into FSEL and connecting a
resistor from RT to AGND. Choose an RT resistor that sets
the free-running frequency to 80% of the synchronization
signal. Table 1 summarizes the frequency selection
configurations.
Table 1. Summary of the Frequency Selection
Configurations
SWITCHING
FREQUENCY
FSEL PIN
RT PIN
350 kHz, internally
set
Float or AGND
Float
550 kHz, internally
set
≥ 2.5 V
Float
The actual slow-start is likely to be less than the above
approximation due to the brief ramp-up at the internal rate.
Externally set
280 kHz to 700 kHz
Float
R = 68 kΩ to 180 kΩ
VBIAS Regulator (VBIAS)
Externally
synchronized
frequency(1)
Synchronization
signal
R = RT value for 80% of
external synchronization
frequency
t
(SS)
+C
(SS)
0.7 V
5 mA
(3)
The VBIAS regulator provides internal analog and digital
blocks with a stable supply voltage over variations in
junction temperature and input voltage. A high quality,
low-ESR, ceramic bypass capacitor is required on the
12
(1) To ensure proper operation when RC filter is used between external
clock and FSEL pin, the recommended values are R ≤ 1 kΩ and
C ≤ 120 pF.
www.ti.com
SGLS280B − JANUARY 2005 − REVISED FEBRUARY 2007
Error Amplifier
The high performance, wide bandwidth, voltage error
amplifier sets the TPS54310 apart from most dc/dc
converters. The user is given the flexibility to use a wide
range of output L and C filter components to suit the
particular application needs. Type 2 or Type 3
compensation can be employed using external
compensation components.
PWM Control
Signals from the error amplifier output, oscillator, and
current limit circuit are processed by the PWM control
logic. Referring to the internal block diagram, the control
logic includes the PWM comparator, OR gate, PWM latch,
and portions of the adaptive dead-time and control logic
block. During steady-state operation below the current
limit threshold, the PWM comparator output and oscillator
pulse train alternately reset and set the PWM latch. Once
the PWM latch is set, the low-side FET remains on for a
minimum duration set by the oscillator pulse duration.
During this period, the PWM ramp discharges rapidly to its
valley voltage. When the ramp begins to charge back up,
the low-side FET turns off and high-side FET turns on. As
the PWM ramp voltage exceeds the error amplifier output
voltage, the PWM comparator resets the latch, thus
turning off the high-side FET and turning on the low-side
FET. The low-side FET remains on until the next oscillator
pulse discharges the PWM ramp.
During transient conditions, the error amplifier output
could be below the PWM ramp valley voltage or above the
PWM peak voltage. If the error amplifier is high, the PWM
latch is never reset and the high-side FET remains on until
the oscillator pulse signals the control logic to turn the
high-side FET off and the low-side FET on. The device
operates at its maximum duty cycle until the output voltage
rises to the regulation set-point, setting VSENSE to
approximately the same voltage as Vref. If the error
amplifier output is low, the PWM latch is continually reset
and the high-side FET does not turn on. The low-side FET
remains on until the VSENSE voltage decreases to a
range that allows the PWM comparator to change states.
The TPS54310 is capable of sinking current continuously
until the output reaches the regulation set-point.
If the current limit comparator trips for longer than 100 ns,
the PWM latch resets before the PWM ramp exceeds the
error amplifier output. The high-side FET turns off and
low-side FET turns on to decrease the energy in the output
inductor and consequently the output current. This
process is repeated each cycle in which the current limit
comparator is tripped.
Dead-Time Control and MOSFET Drivers
Adaptive dead-time control prevents shoot-through
current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the
turn-on times of the MOSFET drivers. The high-side driver
does not turn on until the gate drive voltage to the low-side
FET is below 2 V. The low-side driver does not turn on until
the voltage at the gate of the high-side MOSFETs is below
2 V. The high-side and low-side drivers are designed with
300-mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is supplied
from VIN, while the high-side drive is supplied from the
BOOT pin. A bootstrap circuit uses an external BOOT
capacitor and an internal 2.5-Ω bootstrap switch
connected between the VIN and BOOT pins. The
integrated bootstrap switch improves drive efficiency and
reduces external component count.
Overcurrent Protection
The cycle by cycle current limiting is achieved by sensing
the current flowing through the high-side MOSFET and
differential amplifier and comparing it to the preset
overcurrent threshold. The high-side MOSFET is turned
off within 200 ns of reaching the current limit threshold. A
100-ns leading edge blanking circuit prevents false
tripping of the current limit. Current limit detection occurs
only when current flows from VIN to PH when sourcing
current to the output filter. Load protection during current
sink operation is provided by thermal shutdown.
Thermal Shutdown
The device uses the thermal shutdown to turn off the power
MOSFETs and disable the controller if the junction
temperature exceeds 150°C. The device is released from
shutdown when the junction temperature decreases to
10°C below the thermal shutdown trip point and starts up
under control of the slow-start circuit. Thermal shutdown
provides protection when an overload condition is
sustained for several milliseconds. With a persistent fault
condition, the device cycles continuously; starting up by
control of the soft-start circuit, heating up due to the fault,
and then shutting down upon reaching the thermal
shutdown point.
Power Good (PWRGD)
The power good circuit monitors for under voltage
conditions on VSENSE. If the voltage on VSENSE is 10%
below the reference voltage, the open-drain PWRGD
output is pulled low. PWRGD is also pulled low if VIN is
less than the UVLO threshold, or SS/ENA is low, or
thermal shutdown is asserted. When VIN = UVLO
threshold, SS/ENA = enable threshold, and VSENSE >
90% of Vref, the open drain output of the PWRGD pin is
high. A hysteresis voltage equal to 3% of Vref and a 35-µs
falling edge deglitch circuit prevent tripping of the power
good comparator due to high frequency noise.
13
PACKAGE OPTION ADDENDUM
www.ti.com
15-Feb-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
TPS54310QPWPRQ1
ACTIVE
HTSSOP
PWP
Pins Package Eco Plan (2)
Qty
20
2000 Green (RoHS &
no Sb/Br)
Lead/Ball Finish
CU NIPDAU
MSL Peak Temp (3)
Level-2-260C-1 YEAR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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