ETC TPS54672PWPR

TPS54672
Typical Size
(6,4 mm X 9,7 mm )
SLVS397A – JULY 2001 – REVISED AUGUST 2001
TRACKING/TERMINATION SYNCHRONOUS PWM
SWITCHER WITH INTEGRATED FETs (SWIFT)
FEATURES
D Tracks Externally Applied Reference Voltage
D 30-mΩ, 12-A Peak MOSFET Switches for High
D
D
D
D
Efficiency at 6-A Continuous Output Source
or Sink Current
6% to 90% VIN Output Tracking Range
PWM Frequency Range:
Fixed 350 kHz or Adjustable 280 to 700 kHz
Load Protected by Peak Current Limit and
Thermal Shutdown
Integrated Solution Reduces Board Area and
Component Count
As a member of the SWIFT family of dc/dc regulators,
the TPS54672 tracking/termination synchronous PWM
converter integrates all required active components.
Included on the substrate with the listed features are a
true, high performance, voltage error amplifier that
enables maximum performance and flexibility in
choosing the output filter L and C components; an
under-voltage-lockout circuit to prevent start-up until
the input voltage reaches 3 V; a slow-start control to limit
in-rush currents; and a status output to indicate valid
operating conditions.
The TPS54672 is available in a thermally enhanced
28-pin TSSOP (PWP) PowerPAD package, which
eliminates bulky heatsinks. TI provides evaluation
modules and the SWIFT designer software tool to aid
in quickly achieving high-performance power supply
designs to meet aggressive equipment development
cycles.
APPLICATIONS
D DDR Memory Termination Voltage
D Active Termination of GTL and STL
D
D
DESCRIPTION
High-Speed Logic Families
DAC Controlled High Current Output Stage
Precision Point of Load Power Supply
Typical DDR Memory Termination Regulator Circuit
Input Voltage
3V–6V
0.56 µH
VIN
CIN
CIN
VTTQ
PH
ENA
LOAD TRANSIENT RESPONSE
Output Voltage
(50 mV/div AC Coupled)
COUT
BOOT
CBOOT
PGND
VDDQ
TPS54672
Output Current
(2A/div)
REFIN
VBIAS VSENSE
AGND COMP
CBIAS
10 µs/div
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD and SWIFT are trademarks of Texas Instruments.
Copyright  2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
PWP PACKAGE
(TOP VIEW)
AGND
VSENSE
COMP
STATUS
BOOT
PH
PH
PH
PH
PH
PH
PH
PH
PH
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
THERMAL 22
PAD
21
20
19
18
17
16
15
RT
ENA
REFIN
VBIAS
VIN
VIN
VIN
VIN
VIN
PGND
PGND
PGND
PGND
PGND
AVAILABLE OPTIONS
PACKAGE
TA
PLASTIC HTSSOP
(PWP)†
– 40°C to 85°C
TPS54672PWP
† The PWP package is also available taped and reeled. Add an R
suffix to the device type (i.e., TPS54672PWPR). See the application
section of the data sheet for PowerPAD drawing and layout
information.
absolute maximum ratings over operating free-air temperature (unless otherwise noted)‡
Input voltage range, VI: VIN, ENA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
RT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
VSENSE, REFIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 4 V
BOOT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 17 V
Output voltage range, VO: VBIAS, COMP, STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 7 V
PH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 10 V
Source current, IO: PH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internally Limited
COMP, VBIAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 mA
Sink current, IS:
PH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 A
COMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 mA
STATUS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Voltage differential, AGND to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±0.6 V
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
Storage temperature, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
‡ Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
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TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
PACKAGE
DISSIPATION RATING TABLE
TA ≤ 25°C
DERATING FACTOR†
POWER RATING
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
28 Pin PWP with solder
3.58 W
0.0358 mW/°C
1.96 W
1.43 W
28 Pin PWP without solder
1.78 W
0.0178 mW/°C
0.98 W
0.71 W
† Test Board Conditions:
1. Thickness: 0.062”
2. 3” x 3”
3. 2 oz. Copper traces located on the top and bottom of the PCB for soldering
4. Copper areas located on the top and bottom of the PCB for soldering
5. Power and ground planes, 1 oz. Copper (0.036 mm thick)
6. Thermal vias, 0,33 mm diameter, 1,5 mm pitch (See applications section in this datasheet)
7. Thermal isolation of power plane
For more information on the PWP package, refer to TI technical brief, literature number SLMA002.
ADDITIONAL 6A SWIFT DEVICES, (REFER TO SLVS398 AND SLVS400)
DEVICE
OUTPUT VOLTAGE
DEVICE
OUTPUT VOLTAGE
DEVICE
OUTPUT VOLTAGE
TPS54610
Adjustable
TPS54611
0.9 V
TPS54614
1.8 V
TPS54612
1.2 V
TPS54615
2.5 V
TPS54613
1.5 V
TPS54616
3.3 V
electrical characteristics, TJ = –40°C to +125°C, VI = 3 V to 6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
Input voltage range, VIN
VID
I(Q)
Differential voltage, AGND to PGND
Quiescent current
MIN
TYP
MAX
UNIT
3.0
6.0
V
–0.30
0.30
V
Switching freq. = 350 kHz, RT open
10
Switching freq. = 500 kHz, RT = 100 kΩ
16
24
1
1.4
2.95
3.00
Shutdown, SS/ENA = 0 V
Start threshold voltage, UVLO
16
mA
V
Stop threshold voltage, UVLO
2.70
2.80
V
Hysteresis voltage, UVLO
0.14
0.16
V
2.70
2.80
Rising and falling edge deglitch, UVLO
See Note 1
Output voltage, VBIAS
I(VBIAS) = 0
See Note 2
Output current, VBIAS
µs
2.5
Cumulative regulation accuracy (relative to
REFIN)
IO = – 6A to 6A,
Switching freq. = 350 kHz,
REFIN = 1.25 V (see Note 1)
Internally set—free running frequency
RT open
280
Externally set—free running frequency range
RT = 68 kΩ to 180 kΩ
280
Externally set—free running frequency accuracy
RT = 100 kΩ (1% resistor to AGND)
460
–1.5%
Ramp valley
2.90
V
100
µA
1.5%
350
500
420
kHz
700
kHz
540
kHz
0.75
Ramp amplitude (peak-to-peak)
V
1
Minimum controllable on time
See Note 1
Maximum duty cycle
See Note 1
Error amplifier open loop voltage gain
1 kΩ COMP to AGND (see Note 1)
Error amplifier unity gain bandwidth
Parallel 10 kΩ, 160 pF COMP to AGND
(see Note 1)
V
200
ns
90%
90
110
3
5
dB
MHz
NOTE 1: Ensured by design
2. Static resistive loads only
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3
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
electrical characteristics, TJ = –40°C to +125°C, VI = 3 V to 6 V (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MAX
UNIT
Error amplifier common mode rejection ratio
See Note 1
65
Input bias current, VSENSE
VSENSE = REFIN = 1 V
60
250
nA
Input bias current, REFIN
VSENSE = REFIN = 1.25 V
60
250
nA
Input offset voltage, REFIN
VSENSE = REFIN = 1.25 V
–1.5
1.5
mV
Input voltage range, REFIN
See Note 1
0
1.8
0
1
Common mode output voltage range,
range COMP
IO = 3 mA
IO = –3 mA
PWM comparator propagation delay time, PWM
comparator input to PH pin (excluding deadtime)
10-mV overdrive (see Note 1)
Enable threshold voltage, ENA
2.85
V
dB
1.4
V
V/µs
2.65
V
0.2
0.95
70
85
ns
1.20
1.40
V
Enable hysteresis voltage, ENA
See Note 1
0.03
V
Falling edge deglitch, ENA
See Note 1
2.5
µs
Leakage current, ENA
VI= 5.5 V
I(sink) = 2.5 mA
Output saturation voltage, STATUS
Leakage current, STATUS
Current limit trip point
0.18
VI = 5.5 V
VIN = 3 V, (see Note 1)
7
10
VIN = 6 V, (see Note 1)
10
12
Current limit leading edge blanking time
100
Current limit total response time
200
150
µA
V
1
µA
A
ns
ns
See Note 1
Thermal shutdown hysteresis
See Note 1
10
26
47
Low/high side N-MOSFET
Low/high-side
N MOSFET
IO = 6A, VI = 6 V (see Note 3)
IO = 6A, VI = 3 V (see Note 3)
36
65
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135
1
0.3
Thermal shutdown trip point
NOTES: 1: Ensured by design
2. Static resistive loads only
3. Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) ensured by design
4
TYP
See Note 1
Output voltage slew rate (symmetric), COMP
rDS(on)
MIN
Error amplifier common mode input voltage
range
165
_C
_C
mΩ
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
Terminal Functions
TERMINAL
NAME
NO.
DESCRIPTION
AGND
1
Analog ground. Return for compensation network/output divider, slow-start capacitor, VBIAS capacitor, RT resistor and
SYNC pin. Connect PowerPAD to AGND.
BOOT
5
Bootstrap output. 0.022 µF to 0.1 µF low-ESR capacitor connected from BOOT to PH generates floating drive for the
high-side FET driver.
COMP
3
Error amplifier output. Connect frequency compensation network from COMP to VSENSE
ENA
27
Enable input. Logic high enables oscillator, PWM control and MOSFET driver circuits. Logic low disables operation and
places device in low quiescent current state.
PGND
15–19
Power ground. High current return for the low-side driver and power MOSFET. Connect PGND with large copper areas
to the input and output supply returns, and negative terminals of the input and output capacitors. A single point
connection to AGND is recommended.
PH
6–14
Phase output. Junction of the internal high-side and low-side power MOSFETs, and output inductor.
REFIN
26
External reference input. High impedance input to slow-start and error amplifier circuits.
RT
28
Frequency setting resistor input. Connect a resistor from RT to AGND to set the switching frequency. When using the
SYNC pin, set the RT value for a frequency at or slightly lower than the external oscillator frequency.
STATUS
4
Open drain output. Asserted low when VIN < UVLO threshold, VBIAS and internal reference are not settled or thermal
shutdown active. Otherwise STATUS is high.
VBIAS
25
Internal bias regulator output. Supplies regulated voltage to internal circuitry. Bypass VBIAS pin to AGND pin with a
high-quality, low-ESR 0.1-µF to 1.0-µF ceramic capacitor.
20–24
Input supply for the power MOSFET switches and internal bias regulator. Bypass VIN pins to PGND pins close to device
package with a high-quality, low-ESR 10-µF ceramic capacitor.
VIN
VSENSE
2
Error amplifier inverting input. Connect to output voltage through compensation network/output divider.
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5
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
internal block diagram
VBIAS
AGND
Enable
Comparator
Falling
Edge
Deglitch
ENA
1.2 V
Hysteresis: 0.03 V
2.5 µs
VIN UVLO
Comparator
2.95 V
Hysteresis: 0.16 V
VDDQ
VIN
ILIM
Comparator
Thermal
Shutdown
150°C
VIN
Leading
Edge
Blanking
Falling
and
Rising
Edge
Deglitch
VIN
REG
VBIAS
SHUTDOWN
100 ns
BOOT
Sense Fet
30 mΩ
2.5 µs
SS_DIS
SHUTDOWN
PH
REFIN
Slow-start
(0.25 V/ms minimum)
+
–
R Q
Error
Amplifier
S
PWM
Comparator
LOUT
CO
Adaptive Dead-Time
and
Control Logic
25 ns Adaptive
Dead Time
VIN
30 mΩ
PGND
OSC
TPS54672
STATUS
SS_DIS
VSENSE
6
COMP
RT
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Vtt
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
detailed description
under voltage lock out (UVLO)
The TPS54672 incorporates an under voltage lockout circuit to keep the device disabled when the input voltage
(VIN) is insufficient. During power up, internal circuits are held inactive until VIN exceeds the nominal UVLO
threshold voltage of 2.95 V. Once the UVLO start threshold is reached, device start-up begins. The device
operates until VIN falls below the nominal UVLO stop threshold of 2.8 V. Note that hysteresis in the UVLO
comparator and a 2.5-µs rising and falling edge deglitch circuit reduce the likelihood of shutting the device down
due to noise on VIN.
enable (ENA)
The enable pin, ENA, provides a digital control to enable or disable (shutdown) the TPS54672. An input voltage
of 1.4 V or greater ensures that the TPS54672 is enabled. An input of 0.9 V or less ensures that device operation
is disabled. These are not standard logic thresholds, even though they are compatible with TTL outputs.
When ENA is low, the oscillator, slow-start, PWM control and MOSFET drivers are disabled and held in an initial
state ready for device start-up. On an ENA transition from low to high, device start-up begins with the output
starting from 0 V.
slow-start
The slow-start circuit provides start-up slope control of the output voltage to limit in-rush currents. The nominal
internal slow-start rate is 0.25 V/ms with the maximum rate being 0.35 V/ms. When the voltage on REFIN rises
faster than the internal slope or is present when device operation is enabled, the output rises at the internal rate.
If the reference voltage on REFIN rises more slowly, then the output rises at about the same rate as REFIN.
VBIAS regulator (VBIAS)
The VBIAS regulator provides internal analog and digital blocks with a stable supply voltage over variations in
junction temperature and input voltage. A high quality, low-ESR, ceramic bypass capacitor is required on the
VBIAS pin. X7R or X5R grade dielectrics are recommended because their values are more stable over
temperature. The bypass capacitor should be placed close to the VBIAS pin and returned to AGND.
External loading on VBIAS is allowed, with the caution that internal circuits require a minimum VBIAS of 2.7 V,
and that loads with ac or digital switching noise may degrade performance. The VBIAS pin may be useful as
a reference voltage for external circuits.
oscillator frequency (RT)
The oscillator frequency can be set to an internally fixed value of 350 kHz by leaving the RT pin unconnected
(floating). If a different frequency of operation is required for the application, the oscillator frequency can be
externally adjusted from 280 kHz to 700 kHz by connecting a resistor to the RT pin to ground. The operating
frequency is approximated by the following equation, where R is the resistance from RT to AGND:
Switching Frequency + 100 kW
R
500 [kHz]
(1)
The following table summarizes the frequency selection configurations:
FREE RUNNING FREQUENCY
RT PIN
350 kHz, internally set
Float
Externally set 280 kHz to 700 kHz
R = 68 k to 180 k
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7
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
detailed description (continued)
error amplifier (REFIN, VSENSE, COMP)
The high performance voltage error amplifier, with wide 5MHz bandwidth, low 1.5 mV-max offset, 1.4 V/µs slew
rate, and ground rail input range differentiates the TPS54672 from most dc/dc converters. The user is given the
flexibility to use a wide range of output L and C filter components to suit the particular application needs. Type
2 or type 3 compensation can be employed using external compensation components.
The REFIN input range includes ground which allows 0% duty cycle during transient conditions. The user should
note that steady state regulation accuracy of voltages less than 0.84 V is limited by the minimum controllable
ON time.
PWM control
Signals from the error amplifier output, oscillator and current limit circuit are processed by the PWM control logic.
Referring to the internal block diagram, the control logic includes the PWM comparator, OR gate, PWM latch
and portions of the adaptive dead time and control logic block. During steady state operation below the current
limit threshold, the PWM comparator output and oscillator pulse train alternately reset and set the PWM latch.
Once the PWM latch is set, the low-side FET remains on for a minimum duration set by the oscillator pulse width.
During this period, the PWM ramp discharges rapidly to its valley voltage. When the ramp begins to charge back
up, the low-side FET turns off and high-side FET turns on. As the PWM ramp voltage exceeds the error amplifier
output voltage, the PWM comparator resets the latch, thus turning off the high-side FET and turning on the
low-side FET. The low-side FET remains on until the next oscillator pulse discharges the PWM ramp.
During transient conditions, the error amplifier output could be below the PWM ramp valley voltage or above
the PWM peak voltage. If the error amplifier is high, the PWM latch is never reset and the high-side FET remains
on until the oscillator pulse signals the control logic to turn the high-side FET off and the low-side FET on. The
device operates at its maximum duty cycle until the output voltage rises to the regulation set-point, setting
VSENSE to approximately the same voltage as REFIN. If the error amplifier output is low, the PWM latch is
continually reset and the high-side FET does not turn on. The low-side FET remains on until the VSENSE
voltage decreases to a range that allows the PWM comparator to change states. The TPS54672 is capable of
sinking current continuously until the output reaches the regulation set-point.
If the current limit comparator trips for longer than 100 ns, the PWM latch resets before the PWM ramp exceeds
the error amplifier output. The high-side FET turns off and low-side FET on to decrease the output current. This
process is repeated each cycle in which the current limit comparator is tripped.
dead-time control and MOSFET drivers
Adaptive dead-time control prevents shoot-through current from flowing in both N-channel power MOSFETs
during the switching transitions by actively controlling the turnon times of the MOSFET drivers. The high-side
driver does not turn on until the gate drive voltage to the low-side FET is below 2 V, while the low-side driver
does not turn on until the voltage at the junction of the power MOSFETs (PH pin) is below 2 V.
The high-side and low-side drivers are designed with 300-mA source and sink capability to quickly drive the
power MOSFETs gates. The low-side driver is supplied from VIN, while the high-side drive is supplied from the
BOOT pin. A bootstrap circuit uses an external BOOT capacitor and internal 2.5-Ω bootstrap switch connected
between the VIN and BOOT pins. The bootstrap switch is turned on when the low-side FET is on to charge the
BOOT capacitor. The low resistance of the bootstrap switch improves drive efficiency and reduces external
component count.
8
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TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
detailed description (continued)
overcurrent protection
The cycle by cycle current limiting is achieved using a sense-FET on the high-side MOSFET and differential
amplifier with preset overcurrent threshold. The high-side MOSFET is turned off within 200 ns of the voltage
on the sense-FET exceeding the current limit threshold. A 100-ns leading edge blanking circuit prevents false
tripping of the current limit when the high-side switch is turning on. Current limit detection occurs only when
current flows from VIN to PH when current is being sourced to the output filter. Load protection during current
sink operation is provided by thermal shutdown.
thermal shutdown
Thermal shutdown turns off the power MOSFETs and disables the control circuits if the junction temperature
exceeds the 150°C. The device is released from shutdown automatically when the junction temperature
decreases to 10°C, and starts up under control of the slow-start circuit.
status (STATUS)
The status pin is an open drain output that indicates when internal conditions are sufficient for proper operation.
STATUS can be coupled back to a system controller or monitor circuit to indicate that the termination or tracking
regulator is ready for start up. STATUS is high impedance when the TPS54672 is operating or ready to be
enabled.
STATUS is active low if any of the following occur:
•
•
•
VIN < UVLO threshold
VBIAS or internal reference have not settled.
Thermal shutdown is active.
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TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
TYPICAL CHARACTERISTICS
DRAIN-SOURCE
ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
IO = 6 A
50
40
IO = 3 A
30
20
10
0
25
85
TJ – Junction Temperature – °C
f – Internally Set Oscillator Frequency – kHz
VIN = 3.3 V
0
–40
VIN = 5 V
50
IO = 6 A
40
30
IO = 3 A
20
10
0
–40
125
0
25
85
TJ – Junction Temperature – °C
Figure 1
125
250
–40
0
600
500
400
300
1.255
1.250
1.245
85
0
125
1.251
1.250
1.249
1.248
1
2
3
4
5
3
6
3.5
Figure 5
SLOW-START TIME
vs
JUNCTION TEMPERATURE
0
–40
–60
80
Phase
–80
–100
60
–120
40
Gain
20
–140
9
Slow-Start Time – ms
100
10
–20
Phase – Degrees
120
–160
0
4
4.5
5
IO – Input Voltage – V
Figure 6
ERROR AMPLIFIER OPEN LOOP RESPONSE
RL = 10 kΩ,
CL = 160 pF,
TA = 25°C
8
7
6
–180
–20
1
10
100
1k
10 k 100 k 1 M
125
TA = 85°C
REFIN = 1.25 V,
IO = 3 A
1.252
IO – Output Current – A
Figure 4
140
85
1.247
1.240
25
25
1.253
VO – Output Voltage Regulation – V
VO – Output Voltage Regulation – V
700
Gain – dB
300
OUTPUT VOLTAGE REGULATION
vs
INPUT VOLTAGE
TA = 85°C
REFIN = 1.25 V
TJ – Junction Temperature – °C
–200
10 M
5
–40
f – Frequency – Hz
0
25
85
TJ – Junction Temperature – °C
Figure 7
10
350
Figure 3
1.260
0
400
TJ – Junction Temperature – °C
OUTPUT VOLTAGE REGULATION
vs
OUTPUT CURRENT
800
200
–40
450
Figure 2
EXTERNALLY SET OSCILLATOR
FREQUENCY
vs
JUNCTION TEMPERATURE
f – Externally Set Oscillator Frequency – kHz
INTERNALLY SET OSCILLATOR
FREQUENCY
vs
JUNCTION TEMPERATURE
60
60
Drain Source On-State Resistance – m Ω
Drain Source On-State Resistance – m Ω
DRAIN-SOURCE
ON-STATE RESISTANCE
vs
JUNCTION TEMPERATURE
Figure 8
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125
5.5
6
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
APPLICATION INFORMATION
Figure 9 shows the schematic diagram for a typical DDR memory or GTL bus termination application using the
TPS54672. The TPS54672 (U1) can provide greater than 6 A of output current. For proper operation, the
exposed thermal PowerPAD underneath the integrated circuit package needs to be soldered to the
printed-circuit board.
VI
C4
10 µF
U1
TPS54672
1
2
R2
3
4.75 kΩ
4
5
C2
2700 pF
6
C1
100 pF
C6
0.047 µF
7
8
9
10
R1
10 kΩ
R3
182 Ω
11
12
13
14
C3
0.01 µF
VDDQ
RT
AGND
28
R6
10 kΩ
27
VSENSE
ENA
26
REFIN
COMP
25
STATUS
VBIAS
24
BOOT
VIN
23
PH
VIN
22
PH
VIN
21
PH
VIN
20
PH
VIN
19
PH
PGND
18
PH
PGND
17
PGND
PH
16
PH
PGND
15
PH
PGND
PwrPad
L1
0.56 µH
C9
0.1 µF
R7
10 kΩ
C8
10 µF
VTTQ
+
C7
150 µF
+
C10
150 µF
C11
1 µF
Figure 9. Application Circuit Optimized For Size And Performance
component selection
The values for the components used in this design example were selected for best load transient and tracking
response. Additional design information is available at www.ti.com.
input voltage
The input voltage range is 3 to 5.5 VDC. The input filter (C4) is a 10-µF ceramic capacitor (Taiyo Yuden). C8,
also a 10-µF ceramic capacitor (Taiyo Yuden) that provides high frequency decoupling of the TPS54672 from
the input supply, must be located as close as possible to the device. Ripple current is carried in both C8 and
C4, and the return path to PGND should avoid the current circulating in the output capacitors C7 and C10.
feedback circuit
R1, R2, R3, C1, C2 and C3 form the loop compensation network for the circuit. For this design, a Type 3 topology
is used. The compensation network, along with the output filter inductor and capacitor delivers a crossover
frequency of 135 kHz with 50° of phase margin.
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11
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
APPLICATION INFORMATION
operating frequency
In the application circuit, RT is grounded through a 71.5-kΩ resistor to select the maximum frequency of
700 kHz. To set a different frequency, place a 68-kΩ to 180-kΩ resistor between RT (pin 28) and analog ground
or leave RT floating to select the default 350 kHz. The resistance can be calculated using the following equation:
R+
500 kHz
SwitchingFrequency
100 [kW]
(2)
output filter
The output filter is composed of a 0.56-µH Coilcraft inductor (D01813P–561HC) and two 150-µF Cornell Dublier
capacitors (ESRD151M06R). The inductor is a low dc resistance type. The capacitors used are 4 V POSCAP
types with a maximum ESR of 0.040 Ω.
grounding
Maintaining proper grounding is important for optimum circuit performance. For this design, separate analog
and power grounds, tied together at a single point, are used. The power ground is tied to the negative leads of
the input and output filter capacitors, as well as the PGND pins (15–19) of the TPS54672. All other ground pins
in the circuit are tied to the analog ground including the AGND pin and thermal PowerPAD of the TPS54672.
The single connection point for the analog and power grounds can be made near the IC pins, or connection can
be made near the negative leads of the output filter capacitor to marginally improve output regulation accuracy.
In either case, the input ripple current return path should be strictly avoided. The voltage differential between
AGND pins or PowerPAD and the PGND pins should be limited to 300 mVPP to avoid spurious operation. Refer
to the layout examples in the user guides for the TPS54672 EVM, TPS54610 EVM (SLVU054) and TPS54614
EVM (SLVU053).
layout considerations for thermal performance
For operation at full rated load current, the analog ground plane must provide adequate heat dissipating area.
A 3 inch by 3 inch plane of 1 ounce copper is recommended, though not mandatory, depending on ambient
temperature and airflow. Most applications have larger areas of internal ground plane available, and the
PowerPAD should be connected to the largest area available. Additional areas on the top or bottom layers also
help dissipate heat, and any area available should be used when 6 A or greater operation is desired. Connection
from the exposed area of the PowerPAD to the analog ground plane layer should be made using 0.013 inch
diameter vias to avoid solder wicking through the vias. Eight vias should be in the PowerPAD area with four
additional vias located under the device package. The size of the vias under the package, but not in the exposed
thermal pad area, can be increased to 0.018. Additional vias beyond the twelve recommended that enhance
thermal performance should be included in areas not under the device package.
12
www.ti.com
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
APPLICATION INFORMATION
8 PL Ø 0.0130
4 PL
Ø 0.0180
Minimum Recommended Thermal Vias:
8 x 0.013 Diameter Inside PowerPAD Area
4 x 0.018 Diameter Under Device as Shown.
Additional 0.018 Diameter Vias May Be Used if Top Side Analog Ground
Area is Extended.
Connect Pin 1 to Analog Ground Plane
in This Area for Optimum Performance
0.0150
0.06
0.0339
0.0650
0.0500
0.3478 0.0500
0.1900
0.0500
0.0256
0.0650
0.0339
Exposed Copper Area
For PowerPAD
0.1700
0.1250
Minimum Recommended Top
Side Analog Ground Area
0.1000
0.0600
Figure 10. Recommended Land Pattern for 28-Pin PWP PowerPAD
EFFICIENCY
vs
OUTPUT CURRENT
LOAD TRANSIENT RESPONSE
95
VI = 3.3 V, VO = 1.25 V, L = 2.2 uH
Output Voltage
(50 mV/div AC Coupled)
90
Efficiency – %
85
Output Current
(2A/div)
80
75
VI = 3.3 V,
VO = 0.9 V,
L = 0.56 uH
70
65
VI = 5 V,
VO = 1.75 V,
L = 0.56 uH
60
55
50
0
1
2
3
4
5
6
7
IO – Output Current – A
10 µs/div
Figure 12
Figure 11
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13
TPS54672
SLVS397A – JULY 2001 – REVISED AUGUST 2001
MECHANICAL DATA
PWP (R-PDSO-G**)
PowerPAD PLASTIC SMALL-OUTLINE
20 PINS SHOWN
0,30
0,19
0,65
20
0,10 M
11
Thermal Pad
(See Note D)
4,50
4,30
0,15 NOM
6,60
6,20
Gage Plane
1
10
0,25
A
0°–ā8°
0,75
0,50
Seating Plane
0,15
0,05
1,20 MAX
PINS **
0,10
14
16
20
24
28
A MAX
5,10
5,10
6,60
7,90
9,80
A MIN
4,90
4,90
6,40
7,70
9,60
DIM
4073225/F 10/98
NOTES: A.
B.
C.
D.
All linear dimensions are in millimeters.
This drawing is subject to change without notice.
Body dimensions do not include mold flash or protrusions.
The package thermal performance may be enhanced by bonding the thermal pad to an external thermal plane.
This pad is electrically and thermally connected to the backside of the die and possibly selected leads.
E. Falls within JEDEC MO-153
PowerPAD is a trademark of Texas Instruments.
14
www.ti.com
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