75

NTE75
Silicon NPN Transistor
High Power Amplifier, Switch
(Stud Mount)
Description:
The NTE75 is a silicon NPN transistor in a TO111 type stud mount package that provides a unique
combination of low saturation voltage, high gain, and fast switching. This device is ideally suited for
power supply, pulse amplifier, and similar high efficiency power switching applications.
Features:
D Fast Switching: tr, tf = 300ns (Max)
D Low Saturation Voltage: 250mV max @ 1A
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Power Dissipation, PD
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.33°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA
110
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 100mA, Note 1
80
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA
8
–
–
V
ICEO
VCE = 60V
–
–
100
µA
ICEX
VCE = 110V, VEB = 500mV
–
–
10
µA
Collector–Base Cutoff Current
ICBO
VCB = 80V
–
–
0.4
µA
Emitter–Base Cutoff Current
IEBO
VEB = 6V
–
–
0.4
µA
Collector–Emitter Cutoff Current
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
DC Current Gain (Note 1)
hFE
Collector Saturation Voltage
VCE(sat)
Test Conditions
Min
Typ
Max
Unit
VCE = 5V, IC = 50mA
40
–
–
VCE = 5V, IC = 1A
40
–
120
VCE = 5V, IC = 1A, TA = –65°C
15
–
–
VCE = 5V, IC = 5A
15
–
–
IC = 1A, IB = 100mA, Note 1
–
–
0.25
V
IC = 5A, IB = 500mA, Note 1
–
–
1.5
V
Base Saturation Voltage
VBE(sat)
IC = 1A, IB = 100mA, Note 1
–
–
1.2
V
Base ON Voltage
VBE(on)
VCE = 2V, IC = 1A, Note 1
–
–
1.2
V
AC Current Gain
hFE
VCE = 5V, IC = 50mA, f = 1kHz
40
–
120
fT
VCE = 10V, IC = 1A, f = 10MHz
20
–
120
MHz
VCE = 10V, IE = 0, f = 1MHz
–
–
150
pF
VCC = 20V, IC = 1A,
IB1 = –IB2 = 100mA,
Pulse Width = 2µs,
Duty Cycle ≤ 2%,
Source Impedance = 50Ω
Ω
–
–
60
ns
–
–
300
ns
–
–
1.7
µs
–
–
300
ns
Current Gain–Bandwidth Product
Output Capacitance
Cob
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 1. Pulse Width = 300µs, Duty Cycle ≤ 2%.
Base
.190
(4.82)
Dia
.432
(10.95)
Emitter
Collector/
Stud
.347 (8.82)
Dia
.760
(19.3)
Max
.370
(9.39)
.115 (2.92)
10–32 NF–2A
.078
(1.97)
Max
.420
(10.66)