¡ Semiconductor MSM6690 ¡ Semiconductor MSM6690 ROM Interface IC GENERAL DESCRIPTION The MSM6690 can drive three devices of 131,072 x 8-bit EPROM or Mask ROM. The MSM6690 contains a built-in internal address generator circuit and one external clock input that enables contiued serial read operations. The internal address counter is automatically incremented by one each read operation. The external serial address input allows 1,024 words to be addressed in the X-direction, and 1,024 words in the Y-direction. * ROM is selected through CS1, CS2 and CS3 pins. FEATURES • Capable of driving three devices of 1 Mbit EPROM • Capable of driving three devices of 1 Mbit Mask ROM • Supply voltage : Single 5 V • Package options : 42-pin plastic DIP (DIP42-P-600) (Product name: MSM6690RS) 44-pin plastic QFP (QFP44-P-910-2K) (Product name: MSM6690GS-2K) * Available combinations MSM6388/6588 + MSM6389/6587/6586 + MSM6690 + ROM MSM6688/6788/6789A + (MSM6684/6685) + MSM6690 + ROM Note: When driving the MSM6690 with the MSM6388 or the MSM6588, a serial register (MSM6389, MSM6688 or MSM6586) is required. In the case of the MSM6688, MSM6788 and MSM6789A, a playback system can be constructed without a serial register (MSM6684 or MSM6685). 5 MSM6690 ¡ Semiconductor CE2 CE3 DOUT D7 D0 TEST TEST01 TEST02 VDD GND BLOCK DIAGRAM MULTIPLEXER A0 A6 A7 3 A16 CK CS1 CS CONTROLLER CS2 RDCK CS3 TAS SASY SADY SASX Y-ADDRESS REGISTER CK 10 Sin X-ADDRESS REGISTER CK Sin 10 LD CK Y-ADDRESS COUNTER LD X-ADDRESS COUNTER SADX 5 ¡ Semiconductor MSM6690 PIN CONFIGURATION (TOP VIEW) DOUT 1 42 VDD TEST01 2 41 SADX TEST02 3 40 SADY TEST 4 39 SASX TAS 5 38 SASY RDCK 6 37 CS3 A16 7 36 CS2 A15 8 35 CS1 A12 9 34 A14 A7 A6 10 11 33 32 A13 A8 A5 12 31 A9 A4 13 30 A11 A3 14 29 A10 A2 15 28 CE2 A1 16 27 CE3 A0 D0 17 18 26 25 D7 D6 D1 19 24 D5 D2 20 23 D4 GND 21 22 D3 42-Pin Plastic DIP 5 MSM6690 ¡ Semiconductor 34 SASY 35 SASX 36 SADY 37 SADX 38 VDD 39 VDD 40 DOUT 41 TEST01 42 TEST02 29 A13 A6 6 28 A8 A5 7 27 A9 A4 8 26 A11 A3 9 25 A10 A2 10 24 CE2 A1 11 23 CE3 44-Pin Plastic QFP D7 22 30 A14 5 D6 21 4 A7 D5 20 A12 D4 19 31 CS1 D3 18 32 CS2 3 VDD 17 2 A15 D2 15 A16 GND 16 33 CS3 D1 14 1 D0 13 RDCK A0 12 5 43 TEST 44 TAS PIN CONFIGURATION (TOP VIEW) (Continued) ¡ Semiconductor MSM6690 PIN DESCRIPTIONS Symbol Type Description VDD — Power Supply GND — Ground SADX I (SERIAL ADDRESS) Starting X address. 1024 words are addressed, and 1024 address data can be input as serial data of 10 bit (AX0 to AX9) via SADX pin. SADY I (SERIAL ADDRESS) Starting Y address. 1024 words are addressed, and 1024 address data can be input as serial data of 10 bit (AY0 to AY9) via SADY pin. SASX I (SERIAL ADDRESS STROBE) Clock to load X address's serial address data to internal register. SASY I (SERIAL ADDRESS STROBE) Clock to load Y address's serial address data to internal register. TAS I (TRANSFER ADDRESS STROBE) Serial address data loaded in address register, to internal address counter. X address and Y address data are loaded at fall of TAS pin. RDCK I (READ CLOCK) Clock to read data in data register. Internal operation starts on falling edge of RDCK, and data in the data register is output via DOUT pin. And internal address counter is automatically incremented by one due to the falling of RDCK. DOUT O (DATA OUT) In case CS1, CS2 and CS3 are all at "H" level, or RDCK is at "H" level data output pin is always at high impedance state. When "H" level data or "L" level data is read out, output pin is set to "H" level or "L" level and its read data is kept until RDCK turns to "H" level. CS1 I (CHIP SELECT) Three ROMS selection. CS2 CS3 CS1 CS2 CS3 CE2 CE3 L — — H H H L — L H H H L H L H H H H H When CS1, CS2 and CS3 are all set to "H" level, all input/output pins become disabled. By use of these pins, three ROM data output pins can be connected in parallel. CE2 O CE3 (CHIP ENABLE) ROM enable. Connect it to ROM's CE. A0 - A16 O (ADDRESS OUT) ROM address. D0 - D7 I (DATA IN) ROM data. TEST I IC test. Input "L" level data. TEST01 TEST02 O IC test. Set to open. 5 MSM6690 ¡ Semiconductor ABSOLUTE MAXIMUM RATINGS Parameter Power Supply Voltage Symbol Condition Rating VDD Unit –0.3 to +7.0 V Input Voltage VI Ta = 25°C –0.3 to VDD+0.3 V Output Voltage VO Typical: –0.3 to VDD+0.3 V Input Current II GND = 0 V –10 to +10 mA –20 to +20 mA — –55 to +150 °C Output Current Storage Temperature IO TSTG RECOMMENDED OPERATING CONDITIONS (GND = 0 V) Parameter 5 Symbol Range Unit Power Supply Voltage VDD +3.0 to +6.0 V Operating Temperature Top –40 to +85 °C ELECTRICAL CHARACTERISTICS DC Characteristics (VDD = 5.0 V ± 10%, GND = 0 V, Ta = –40 to +85°C) Parameter Condition Min. Typ.* Max. Unit "H" level Input Voltage VIH CMOS level input 3.5 — VDD+0.3 V "L" level Input Voltage VIL CMOS level input –0.3 — 1.5 V "H" level Input Current IIH VIH = VDD — 0.01 10 mA mA IIL VIL = GND –10 –0.01 — 3-state Output Leak Current IOZH VOH = VDD — 0.01 10 (with open drain output) IOZL VOL = GND –10 –0.01 — "H" level Output Voltage V OH IOH = –5.0 mA 2.4 4.2 VDD V "L" level Output Voltage V OL IOL = 5.0 mA GND 0.24 0.5 V — 0.1 100 mA — — 2 mA "L" level Input Current * Symbol Supply Current at Standby I DS Supply Current at Operating I DD Output open VIH = VDD VIL = GND — Typical operation is with VDD = 5.0 V, Ta = 25°C mA CS1 CS2 CS3 CS4 TAS RWCK WE DI/O SAS SAD GND DIN AU/D TEST TEST TEST TEST VDD MSM6388 MSM6588 VDD TAS TEST SAS WE CS DOUT GND RWCK MSM6389 CS1 CS2 CS3 DOUT SADX SADY SASX SASY TAS RDCK GND A16 TEST CE3 CE2 TEST02 VPP CE GND OE CE GND OE VPP CE GND OE A16 A16 27C1000 VCC PGM D0 A16 27C1000 VCC PGM D0 D7 A0 D7 A0 D7 A0 27C1000 PGM VPP D7 A0 VCC D0 D0 TEST01 MSM6690 VDD ¡ Semiconductor MSM6690 APPLICATION CIRCUITS 5 SAD Example of application circuit where MSM6388/6588,a 1-Mbit serial register, and three 1-Mbit EPROMs are connected. DOUT CS1 CS2 CS3 DROM CS1 CS2 CS3 CS4 MSM6688 MSM6789A GND TAS RWCK SADY SAS SADX SADY SASX SASY TAS RDCK SADX GND A16 D7 A0 D0 Example of application circuit where MSM6688/6789A and four 1-Mbit EPROMs are connected. TEST CE3 CE2 TEST02 TEST01 MSM6690 VDD A16 CE GNDOE CE GNDOE D7 A0 27C1000 VCC PGM VPP D0 A16 D7 A0 27C1000 VCC PGM VPP D0 5 VDD VPP CE GNDOE A16 D7 A0 27C1000 VCCPGM D0 CE GNDOE A16 D7 A0 27C1000 VCC PGM VPP D0 MSM6690 ¡ Semiconductor APPLICATION CIRCUITS (Continued)