TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK ● DECEMBER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP145, TIP146 and TIP147 ● 125 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 5 A SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP140 Collector-base voltage (IE = 0) TIP141 Emitter-base voltage Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V 60 VCEO TIP142 Continuous collector current 80 100 TIP140 TIP141 UNIT 60 VCBO TIP142 Collector-emitter voltage (IB = 0) VALUE 80 V 100 V EBO 5 V IC 10 A ICM 15 A IB 0.5 A Ptot 125 W Ptot 3.5 W ½LIC 2 100 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER V (BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE VEC TEST CONDITIONS Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current MIN TIP140 IC = 30 mA IB = 0 (see Note 5) TYP MAX TIP141 80 TIP142 100 V VCE = 30 V IB = 0 TIP140 2 V CE = 40 V IB = 0 TIP141 2 V CE = 50 V IB = 0 TIP142 2 VCB = 60 V IE = 0 TIP140 1 V CB = 80 V IE = 0 TIP141 1 V CB = 100 V IE = 0 TIP142 1 VEB = IC = 0 5V UNIT 60 2 mA mA mA Forward current VCE = 4V IC = 5 A transfer ratio V CE = 4V IC = 10 A Collector-emitter IB = 10 mA IC = 5 A saturation voltage IB = 40 mA IC = 10 A 4V IC = 10 A (see Notes 5 and 6) 3 V IB = 0 (see Notes 5 and 6) 3.5 V MAX UNIT Base-emitter voltage Parallel diode forward voltage VCE = IE = 10 A (see Notes 5 and 6) 1000 500 2 (see Notes 5 and 6) 3 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25°C case temperature PARAMETER † † MIN TYP ton Turn-on time IC = 10 A IB(on) = 40 mA IB(off) = -40 mA 0.9 µs toff Turn-off time V BE(off) = -4.2 V RL = 3 Ω tp = 20 µs, dc ≤ 2% 11 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS140AA 70000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 VCE = 4 V tp = 300 µs, duty cycle < 2% 100 0·5 1·0 10 TCS140AB 2·0 tp = 300 µs, duty cycle < 2% IB = IC / 100 1·5 1·0 0·5 20 TC = -40°C TC = 25°C TC = 100°C 0 0·5 1·0 IC - Collector Current - A 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS140AC VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 TC = -40°C TC = 25°C 2·5 TC = 100°C 2·0 1·5 1·0 0·5 0 0·5 IB = IC / 100 tp = 300 µs, duty cycle < 2% 1·0 10 20 IC - Collector Current - A Figure 3. PRODUCT INFORMATION 3 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS140AA 10 1·0 TIP140 TIP141 TIP142 0·1 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS140AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 TC - Case Temperature - °C Figure 5. PRODUCT 4 INFORMATION 125 150 TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 5 INFORMATION MDXXAW TIP140, TIP141, TIP142 NPN SILICON POWER DARLINGTONS DECEMBER 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION