CM200TU-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Six IGBTMOD™ 200 Amperes/250 Volts A B F E G H E G E H R 4 - Mounting Holes S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N 5 - M5 NUTS E H E H K E J J 0.110 - 0.5 Tab P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.54±0.01 Millimeters Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters 107.0 K 0.15 90.0±0.25 L 0.67 17.0 3.75 102.0 M 1.91 48.5 80.0±0.25 N 0.03 0.8 C 4.02 D 3.15±0.01 E 0.43 11.0 P 0.32 8.1 F 0.91 23.0 Q 1.02 26.0 G 0.47 12.0 R 0.22 Dia. H 0.85 21.7 S 0.57 J 0.91 23.0 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-5F is a 250V (VCES), 200 Ampere SixIGBT IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 5 5.5 Dia. 14.4 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-5F Trench Gate Design Six IGBTMOD™ 200 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM200TU-5F Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 250 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 600 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Mounting Torque, M5 Main Terminal – 31 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 680 Grams Viso 2500 Volts Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. ICES VCE = VCES, VGE = 0V – – 1 Units mA IGES VGE = VCES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Voltage IC = 200A, VGE = 10V, Tj = 25°C – 1.2 1.7 Volts IC = 200A, VGE = 10V, Tj = 125°C – 1.1 – Volts Total Gate Charge QG VCC = 100V, IC = 200A, VGE = 10V – Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V – – – Min. Typ. Max. – – 66 – – 3.0 nf – – 2.3 nf 2.0 nC Volts Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Units Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 100V, IC = 200A, – – 700 Load Rise Time tr VGE1 = VGE2 = 10V, – – 1800 ns Switch Turn-off Delay Time td(off) RG = 13V, Resistive – – 700 ns Times Fall Time tf Load Switching Operation – – 500 ns Diode Reverse Recovery Time** trr IE = 200A, diE/dt = -400A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 200A, diE/dt = -400A/µs – – µC VCE = 10V, VGE = 0V nf ns Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c)R Per Free-Wheel Diode 1/6 Module – – 0.47 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.09 – °C/W Contact Thermal Resistance * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Max. Units Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TU-5F Trench Gate Design Six IGBTMOD™ 200 Amperes/250 Volts OUTPUT CHARACTERISTICS (TYPICAL) 8 6 400 Tj = 25oC 5.75 VGE = 15V 5.5 300 200 5.25 100 5 4.75 4.5 0 0 1 2 3 300 200 100 1.0 0.5 0 0 5 VGE = 10V Tj = 25°C Tj = 125°C 1.5 0 4 2 4 6 8 0 10 80 160 240 320 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 5 102 IC = 400A IC = 200A 1 IC = 80A 101 Coes 100 Cres VGE = 0V f = 1MHz 101 0.6 0 5 102 Cies 10 15 0.8 1.0 1.2 1.4 1.6 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) SWITCHING TIME, (ns) REVERSE RECOVERY TIME, trr, (ns) 103 trr 102 Irr COLLECTOR CURRENT, IC, (AMPERES) 102 101 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 101 102 GATE CHARGE, VGE di/dt = -400A/µsec Tj = 25°C 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 103 101 101 10-1 10-1 1.8 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 2 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 3 CAPACITANCE, Cies, Coes, Cres, (nF) 4 0 400 Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 2.0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 10 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 200A 15 VCC = 50V VCC = 100V 10 5 0 0 0.5 1.0 1.5 2.0 GATE CHARGE, QG, (mC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.21°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM200TU-5F Trench Gate Design Six IGBTMOD™ 200 Amperes/250 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3