CM600HA-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 600 Amperes/600 Volts A C Y - THD (2 TYP.) M E E C P D B E U R G T Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. V - THD (2 TYP.) Q X - DIA. (4 TYP.) L N G Z J J S K H F Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking W E C E G Outline Drawing and Circuit Diagram Dimensions Inches A 4.33 Millimeters 110.0 Dimensions Inches Millimeters N 0.69 17.5 B 3.15 80.0 P 0.61 15.5 C 3.66±0.008 93.0±0.25 Q 0.51 13.0 D 2.44±0.008 62.0±0.25 R 0.49 12.5 E 1.57 40.0 S 0.45 11.5 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies F 1.42 Max. 36.0 Max. T 0.43 11.0 G 1.14 29.0 U 0.35 9.0 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM600HA-12H is a 600V (VCES), 600 Ampere Single IGBTMOD™ Power Module. H 1.00 Max. 25.5 Max. V M8 Metric M8 Type J 0.96 25.0 W 0.28 7.0 Current Rating Amperes VCES Volts (x 50) K 0.94 24.5 X 0.256 Dia. Dia. 6.50 CM 600 12 L 0.83 21.0 Y M4 Metric M4 M 0.71 18.0 Z 0.12 3.04 177 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-12H Single IGBTMOD™ H-Series Module 600 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HA-12H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage VGES ±20 Volts IC 600 Amperes ICM 1200* Amperes Collector Current Peak Collector Current Diode Forward Current IF 600 Amperes Diode Forward Surge Current IFM 1200* Amperes Power Dissipation Pd 2100 Watts – 95 in-lb Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (Typical) – 560 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 15V – 2.1 2.8** Volts IC = 600A, VGE = 15V, Tj = 150°C – 2.15 – Volts Total Gate Charge QG VCC = 600V, IC = 600A, VGS = 15V – 1800 – nC Diode Forward Voltage VFM IE = 600A, VGS = 0V – – 2.8 Volts Min. Typ. Max. Units – – 60 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz – – 21 nF – – 12 nF – – 350 ns tr VCC = 300V, IC = 600A, – – 700 ns td(off) VGE1 = VGE2 = 15V, RG = 1.0Ω – – 350 ns – – 300 ns tf Diode Reverse Recovery Time trr IE = 600A, diE/dt = –1200A/µs – – 110 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = –1200A/µs – 1.62 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 178 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.06 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.12 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.035 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-12H Single IGBTMOD™ H-Series Module 600 Amperes/600 Volts 1200 1000 15 800 11 600 10 400 9 200 7 VCE = 10V Tj = 25°C Tj = 125°C 1000 800 600 400 200 8 0 0 0 2 4 6 8 10 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 4 8 12 16 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 0 20 600 800 1000 1200 CAPACITANCE VS. VCE (TYPICAL) IC = 1200A 6 IC = 600A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 103 102 Cies 101 Coes VGE = 0V f = 1MHz IC = 240A 8 12 16 20 0 0.8 1.6 2.4 3.2 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, t rr, (ns) td(off) tf td(on) 102 tr VCC = 300V VGE = ±15V RG = 1.0 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 Irr 101 t rr di/dt = -1200A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 101 102 GATE CHARGE, VGE 102 102 Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 100 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 4 100 10-1 101 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 101 101 400 102 Tj = 25°C 0 200 COLLECTOR-CURRENT, IC, (AMPERES) 104 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 600A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 400 800 1200 1600 2000 2400 GATE CHARGE, QG, (nC) 179 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 180 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.06°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM600HA-12H Single IGBTMOD™ H-Series Module 600 Amperes/600 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.12°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3