CM600HA-5F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Single IGBTMOD™ 600 Amperes/250 Volts H E F G D J W - DIA. (4 TYP.) K y P Q E C E x N M L G C B R A U - THD. (2 TYP.) V -THD. (2 TYP.) S T Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diodes □ High Frequency Operation (20-25 kHz) □ Isolated Baseplate for Easy Heat Sinking C E E G Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 4.25 108.0 Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration, with a reverse connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Dimensions Inches Millimeters N 0.39 10.0 B 3.66 93.0 P 0.39 10.0 C 0.63 16.0 Q 0.51 13.0 D 0.30 7.5 R 0.33 8.5 E 0.69 17.5 S 1.42 36.0 1.02 25.8 Applications: □ DC Chopper □ Inverter □ UPS □ Forklift Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM600HA-5F is a 250V (VCES), 600 Ampere Single IGBTMOD™ Power Module. F 1.14 29.0 T G 0.79 20.0 U M6 Metric M6 H 0.94 24.0 V M4 Metric M4 J 0.31 7.9 W 0.22 5.5 K 0.24 6.0 X 0.79 20.0 Type Current Rating Amperes VCES Volts (x 50) L 2.44 62.0 Y 0.35 9.0 CM 600 5 M 1.89 48.0 369 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD™ 600 Amperes/250 Volts Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Characteristics Symbol CM600HA-5F Units Tj -40 to 150 °C Junction Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 250 Volts Gate-Emitter Voltage (C-E Short) VGES ±20 Volts IC 600 Amperes Peak Collector Current ICM 1200 Amperes Diode Forward Current IF 600 Amperes Diode Forward Surge Current IFM 1200 Amperes Power Dissipation Pd 960 Watts Storage Temperature Collector Current Maximum Mounting Torque, M6 Terminal Screws — 26 in-lb Maximum Mounting Torque, M6 Mounting Screws — 26 in-lb Maximum Mounting Torque, M4 (G, E) Terminal Screws — 13 in-lb Module Weight (Typical) — 400 Grams VRMS 2500 Volts Isolation Voltage, AC 1 minute, 60Hz Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 60mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 600A, VGE = 10V, — 1.2 1.7 Volts IC = 600A, VGE = 10V, Tj = 150°C — 1.1 — Volts Total Gate Charge QG VCC = 50V, IC = 600A, VGS = 10V — 2200 — nC Diode Forward Voltage VFM IE = 600A, VGS = 0V — — 2.0 Volts Min. Typ. Max. Units — — 165 nF Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Input Capacitance CIES Output Capacitance COES Reverse Transfer Capacitance CRES Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V — — 7.5 nF — — 5.6 nF — — 1000 ns — — 4000 ns tr VCC = 50V, IC = 600A, td(off) VGE1 = VGE2 = 10V, RG = 4.2Ω, — — 1000 ns tF Resistive Load — — 500 ns Diode Reverse Recovery Time trr IE = 600A, diE/dt = -1200A/ms — — 300 ns Diode Reverse Recovery Charge Qrr IE = 600A, diE/dt = -1200A/ms — 9.5 — µC Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified 370 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Rth(j-c) Per IGBT — — 0.13 °C/W Rth(j-c) Free Wheel Diode — — 0.19 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied — — 0.040 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD™ 600 Amperes/250 Volts 1200 10 8 6 1000 VGE = 15V 5.5 800 600 5.25 400 5.0 200 4.5 1000 800 600 400 200 4.75 0 1.5 1.0 0.5 1 2 3 4 5 0 0 2 4 6 8 0 10 200 400 600 800 1000 1200 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 5 103 IC = 1200A 1 IC = 240A 5 10 102 15 0.8 1.0 1.2 1.4 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) VCC = 100V VGE = ±10V RG = 4.2Ω Tj = 125°C td(off) td(on) tf di/dt = -1200A/µsec Tj = 25°C t rr Irr 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 102 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 tr 102 Coes 100 10-1 1.8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 104 101 Cres 101 0.6 0 0 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 600A 2 Cies 102 101 103 20 IC = 600A GATE-EMITTER VOLTAGE, VGE, (VOLTS) 3 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 4 103 VGE = 0V f = 1MHz Tj = 25°C Tj = 25°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 15V Tj = 25°C Tj = 125°C 0 0 SWITCHING TIME, (ns) 2.0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5.75 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1200 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VCC = 50V 15 VCC = 100V 10 5 0 0 1 2 3 4 5 GATE CHARGE, QG, (µC) 371 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-5F Trench Gate Design Single IGBTMOD™ 600 Amperes/250 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.13°C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 TIME, (s) 372 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 100 101 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.185°C/W 100 10-1 10-2 10-3 10-3 10-2 10-1 TIME, (s) 100 101