CM75DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts A B C F K Q - DIA. (2 TYP.) E2 G2 F M J C2E1 E2 G1 E1 D C1 N R S - M5 THD (3 TYP.) Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. (3 TYP.) R R H .110 TAB H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 K 0.67 17.0 B 3.150±0.01 80.0±0.25 L 0.63 16.0 C 1.57 40.0 M 0.51 13.0 D 1.34 34.0 N 0.47 12.0 E 1.22 Max. 31.0 Max. P 0.28 7.0 F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 G 0.85 21.5 R 0.16 4.0 H 0.79 20.0 S M5 Metric M5 J 0.71 18.0 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75DY-24H is a 1200V (VCES), 75 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 75 24 257 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM75DY-24H Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts IC 75 Amperes ICM 150* Amperes Collector Current Peak Collector Current Diode Forward Current IF 75 Amperes Diode Forward Surge Current IFM 150* Amperes Power Dissipation Pd 600 Watts – 17 in-lb Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws – 26 in-lb Module Weight (Typical) – 190 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V – 2.5 3.4** Volts IC = 75A, VGE = 15V, Tj = 150°C – 2.25 – Volts Total Gate Charge QG VCC = 600V, IC = 75A, VGS = 15V – 375 – nC Diode Forward Voltage VFM IE = 75A, VGS = 0V – – 3.5 Volts Min. Typ. Max. Units – – 15 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz – – 5.3 nF – – 3 nF – – 150 ns tr VCC = 600V, IC = 75A, – – 350 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 250 ns – – 350 ns tf Diode Reverse Recovery Time trr IE = 75A, diE/dt = –150A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = –150A/µs – 0.56 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 258 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts 150 125 15 5 12 VGE = 20V 100 11 75 10 50 9 25 7 VCE = 10V Tj = 25°C Tj = 125°C 125 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 100 75 50 25 8 0 0 0 2 4 6 8 0 10 4 8 12 16 4 3 2 1 0 20 0 25 50 75 100 125 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 10 IC = 150A IC = 75A 4 2 IC = 30A 102 101 8 12 16 20 0 0.8 1.6 2.4 3.2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, t rr, (ns) 102 td(on) 102 COLLECTOR CURRENT, IC, (AMPERES) 102 101 Irr di/dt = -150A/µsec Tj = 25°C tr 101 t rr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 101 102 GATE CHARGE, VGE tf td(off) Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 103 101 100 Coes 100 10-1 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C Cies VGE = 0V f = 1MHz 100 4 101 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 6 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 0 150 102 Tj = 25°C 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 500 600 GATE CHARGE, QG, (nC) 259 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 260 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM75DY-24H Dual IGBTMOD™ H-Series Module 75 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3