VISHAY SD101C

SD101A, SD101B, SD101C
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
Mechanical Data
•
•
•
•
•
•
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
HF-Detector
Protection circuit
Diode for low currents with a low supply voltage
Small battery charger
Power supplies
DC/DC converter for notebooks
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
SD101A
VR = 60 V, VF max. 410 mV at IF = 1 mA SD101A-TR or SD101A-TAP
SD101A
Tape and Reel/Ammopack
SD101B
VR = 50 V, VF max. 400 mV at IF = 1 mA SD101B-TR or SD101B-TAP
SD101B
Tape and Reel/Ammopack
SD101C
VR = 40 V, VF max. 390 mV at IF = 1 mA SD101C-TR or SD101C-TAP
SD101C
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Forward continuous current
Symbol
Value
Unit
VR
60
V
SD101B
VR
50
V
SD101C
VR
40
V
IF
30
mA
IFSM
2
A
Repetitive peak forward current
IFRM
150
mA
Power dissipation
Ptot
3101)
mW
Peak forward surge current
tp = 10 µs
Part
SD101A
1) Valid provided that electrodes are kept at ambient temperature.
Document Number 85629
Rev. 1.6, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
SD101A, SD101B, SD101C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Tj
125
°C
Tstg
- 65 to + 150
°C
RthJA
3201)
K/W
Junction temperature
Storage temperature range
Thermal resistance junction to ambient air
1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min.
SD101A
V(BR)
60
V
SD101B
V(BR)
50
V
SD101C
V(BR)
40
V
VR = 50 V
SD101A
IR
200
nA
VR = 40 V
SD101B
IR
200
nA
SD101C
IR
200
nA
SD101A
VF
410
mV
SD101B
VF
400
mV
SD101C
VF
390
mV
SD101A
VF
1000
mV
SD101B
VF
950
mV
SD101C
VF
900
mV
SD101A
CD
2.0
pF
SD101B
CD
2.1
pF
SD101C
CD
2.2
pF
IR = 10 µA
Reverse Breakdown Voltage
Leakage current
VR = 30 V
IF = 1 mA
Forward voltage drop
IF = 15 mA
VR = 0 V, f = 1 MHz
Diode capacitance
VR = 0 V, f = 1 MHz
Typ.
Max.
Unit
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
2.0
Tj = 125 °C
10
Tj = 100 °C
Tj = 75 °C
1
Tj = 50 °C
0.1
Tj = 25 °C
CD - Diode Capacitance (pF)
IR = Reverse Current (µA)
100
Tj = 25 °C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0
16204
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
Figure 1. Reverse Current vs. Reverse Voltage
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2
50
0
16205
5
10
15
20
25
30
35
40
45
50
VR - Reverse Voltage (V)
Figure 2. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85629
[email protected], [email protected], [email protected]
Rev. 1.6, 23-Jul-10
SD101A, SD101B, SD101C
Vishay Semiconductors
IF - Forward Current (mA)
10.00
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF - Forward Voltage (V)
16206
Figure 3. Forward Current vs. Forward Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85629
Rev. 1.6, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
www.vishay.com
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DO35
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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Document Number 84001
Rev. 1.3, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Document Number: 91000
Revision: 11-Mar-11
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