VISHAY SD103C

SD103A, SD103B, SD103C
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• The SD103 series is a Metal-on-silicon
Schottky barrier device which is
protected by a PN junction guard ring.
• The low forward voltage drop and fast
switching make it ideal for protection of
MOS devices, steering, biasing and
coupling diodes for fast switching and low
logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the SOD-123
and SOD-323 case with type designations
SD103AW(S)-V...SD103CW(S)-V, and in the
MiniMELF case with type designations LL103A
thru LL103C.
• For general purpose applications
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
•
•
•
•
HF-Detector
Protection circuit
Small battery charger
AC-DC/DC-DC converters
Mechanical Data
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
SD103A
VR = 40 V
SD103A-TR or SD103A-TAP
SD103A
Tape and Reel/Ammopack
SD103B
VR = 30 V
SD103B-TR or SD103B-TAP
SD103B
Tape and Reel/Ammopack
SD103C
VR = 20 V
SD103C-TR or SD103C-TAP
SD103C
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Peak inverse voltage
Test condition
Part
Symbol
Value
Unit
SD103A
VR
40
V
SD103B
VR
30
V
SD103C
VR
20
V
1)
Power dissipation (infinite heatsink)
Ptot
400
Single cycle surge 60 Hz sine wave
IFSM
15
1)
mW
A
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Document Number 85754
Rev. 1.6, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
SD103A, SD103B, SD103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3101)
K/W
Tj
125
°C
Tstg
- 55 to + 150
°C
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
1)
Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse Breakdown Voltage
Part
Symbol
Min.
SD103A
V(BR)
40
V
SD103B
V(BR)
30
V
SD103C
V(BR)
20
SD103A
IR
5
µA
VR = 20 V
SD103B
IR
5
µA
VR = 10 V
SD103C
IR
5
µA
VF
370
mV
600
mV
IR = 50 µA
VR = 30 V
Leakage current
IF = 20 mA
Forward voltage drop
Diode capacitance
Reverse recovery time
Typ.
Max.
Unit
V
IF = 200 mA
VF
VR = 0 V, f = 1 MHz
CD
50
pF
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
5
100
IF - Forward Current (A)
IF - Forward Current (mA)
1000
10
1
0.1
0.01
0.001
4
3
2
1
0
0 100 200 300 400 500 600 700 800 900 1000
16765
VF - Forward Voltage (mV)
Figure 1. Forward Current vs. Forward Voltage
www.vishay.com
2
0.0
16766
0.5
1.0
1.5
2.0
VF - Forward Voltage (V)
Figure 2. Forward Current vs. Forward Voltage
For technical questions within your region, please contact one of the following: Document Number 85754
[email protected], [email protected], [email protected]
Rev. 1.6, 23-Jul-10
SD103A, SD103B, SD103C
Vishay Semiconductors
25
Itot - Typ. Non Repetitve
Forward Surge Current (A)
IR - Reverse Current (µA)
10 000
1000
100
10
20
15
10
5
1
0
0
16767
20
40
60
80
100
120
140
160
0.1
Tj - Junction Temperature (°C)
16769
Figure 3. Reverse Current vs. Junction Temperature
1.0
10.0
tP - Pulse width (ms)
Figure 5. Typ. Non Repetitive Forward Surge Current vs.
Pulse Width
30
CD - Diode Capacitance (pF)
f = 1 MHz
25
20
15
10
5
0
0
10
5
15
20
25
30
VR - Reverse Voltage (V)
16768
Figure 4. Diode Capacitance vs. Reverse Voltage
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85754
Rev. 1.6, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
www.vishay.com
1
DO35
Vishay Semiconductors
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Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
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substances and do not contain such substances.
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and may do so without further notice.
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damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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Document Number 84001
Rev. 1.3, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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