VISHAY BAT82S

BAT81S, BAT82S, BAT83S
Vishay Semiconductors
Small Signal Schottky Diodes
Features
• Integrated protection ring against static
discharge
• Low capacitance
• Low leakage current
• Low forward voltage drop
• Very low switching time
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
94 9367
Applications
Mechanical Data
• General purpose and switching Schottky barrier
diode
• HF-Detector
• Protection circuit
• Diode for low currents with a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Type differentiation
Ordering code
Type Marking
Remarks
BAT81S
VR = 40 V
BAT81S-TR or BAT81S-TAP
BAT81S
Tape and Reel/Ammopack
BAT82S
VR = 50 V
BAT82S-TR or BAT82S-TAP
BAT82S
Tape and Reel/Ammopack
BAT83S
VR = 60 V
BAT83S-TR or BAT83S-TAP
BAT83S
Tape and Reel/Ammopack
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse voltage
Repetitive peak forward current
Document Number 85512
Rev. 1.8, 23-Jul-10
Symbol
Value
Unit
BAT81S
VR
40
V
BAT82S
VR
50
V
BAT83S
VR
60
V
IF
30
mA
tp ≤ 10 ms
IFSM
500
mA
tp ≤ 1 s
IFRM
150
mA
Forward continuous current
Peak forward surge current
Part
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
BAT81S, BAT82S, BAT83S
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
l = 4 mm, TL = constant
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Symbol
IF = 0.1 mA
VF
Min.
Typ.
Max.
Unit
330
mV
IF = 1 mA
VF
410
mV
IF = 15 mA
VF
1000
mV
VR = VRmax
IR
200
nA
VR = 1 V, f = 1 MHz
CD
1.6
pF
Forward voltage
Reverse current
Diode capacitance
Test condition
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
PR - Reverse Power Dissipation (mW)
14
1000
VR = 60 V
I F - Forward Current (mA)
12
RthJA = 540 K/W
10
8
6
Limit at
PPRR - Limit
at100
100%%VRVR
4
PR - Limit at 80 % VR
100
Tj = 125 °C
10
Tj = 25 °C
1
0.1
2
0.01
0
25
50
75
100
125
Tj - Junction Temperature (°C)
15794
0
150
1.5
2.0
Figure 3. Forward Current vs. Forward Voltage
1000
2.0
CD - Diode Capacitance (pF)
V R = V RRM
I R - Reverse Current (µA)
1
V F - Forward Voltage (V)
15796
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
0.5
100
10
1
f = 1 MHz
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
25
15795
0
50
75
100
125
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
0.1
150
15797
1
10
100
VR - Reverse Voltage (V)
Figure 4. Diode Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following: Document Number 85512
[email protected], [email protected], [email protected]
Rev. 1.8, 23-Jul-10
BAT81S, BAT82S, BAT83S
Vishay Semiconductors
Package Dimensions in millimeters (inches): DO-35
3.9 (0.154) max.
26 (1.024) min.
1.5 (0.059)
26 (1.024) min.
1.7 (0.067)
0.55. (0.022) max
Cathode identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85512
Rev. 1.8, 23-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
DO35
Vishay Semiconductors
DO35
Package Dimensions in mm (Inches)
3.9 max. (0.154)
26 min. (1.024)
1.5 (0.059)
26 min. (1.024)
1.7 (0.067)
0.55 max. (0.022)
Cathode Identification
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 84001
Rev. 1.3, 12-Feb-07
www.vishay.com
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DO35
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
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Document Number 84001
Rev. 1.3, 12-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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