QRD1113/1114 REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS FEATURES • Phototransistor Output 0.083 (2.11) PIN 1 INDICATOR • No contact surface sensing OPTICAL CENTERLINE • Unfocused for sensing diffused surfaces • Compact Package 0.240 (6.10) 0.120 (3.05) • Daylight filter on sensor 0.173 (4.39) 0.183 (4.65) NOTES 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16” (1.6mm) from housing. 5. As long as leads are not under any spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Cross talk (ICX) is the collector current measured with the indicator current on the input diode and with no reflective surface. 8. Measured using an Eastman Kodak neutral white test card with 90% diffused reflecting as a reflective surface. 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 1 4 (Applies to Max Ratings and Characteristics Tables.) 0.100 (2.54) 0.083 (2.11) SCHEMATIC PIN 1 COLLECTOR PIN 3 ANODE PIN 2 EMITTER PIN 4 CATHODE 2 3 1 4 NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050” shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. ABSOLUTE MAXIMUM RATINGS Parameter (TA = 25°C unless otherwise specified) Symbol Rating Units Operating Temperature TOPR -40 to +85 °C Storage Temperature TSTG -40 to +85 °C TSOL-I 240 for 5 sec °C TSOL-F 260 for 10 sec °C EMITTER Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V mW Lead Temperature (Solder Iron)(2,3) Lead Temperature (Solder Power Dissipation(1) Flow)(2,3) PD 100 SENSOR Collector-Emitter Voltage VCEO 30 Emitter-Collector Voltage VECO Power Dissipation(1) 1 of 3 PD V V 100 mW 100030A QRD1113/1114 REFLECTIVE OBJECT SENSOR ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER (TA = 25°C) TEST CONDITIONS SYMBOL MIN TYP MAX IF = 20 mA VF — — 1.7 V VR = 5 V IR — — 100 µA IF = 20 mA !PE — 940 — nm IC = 1 mA BVCEO 30 — — V IE = 0.1 mA BVECO 5 — — V Dark Current VCE = 10 V, IF = 0 mA ID — — 100 nA COUPLED IF = 20 mA, VCE = 5 V IC(ON) 0.300 — — mA IC(ON) 1 — — mA VCE (SAT) — — 0.4 V ICX — .200 10 µA EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Collector-Emitter Breakdown Emitter-Collector Breakdown QRD1113 Collector Current QRD1114 Collector Current Collector Emitter Saturation Voltage Cross Talk D = .050” (6,8) IF = 20 mA, VCE = 5 V D = .050” (6,8) IF = 40 mA, IC = 100 µA D = .050” UNITS (6,8) IF = 20 mA, VCE = 5 V, EE = 0 (7) Rise Time VCE = 5 V, RL = 100 " tr — 10 — µs Fall Time IC(ON) = 5 mA tf — 50 — µs 2 of 3 100030A QRD1113/1114 REFLECTIVE OBJECT SENSOR TYPICAL PERFORMANCE CURVES Fig. 1 Forward Voltage vs. Forward Current Fig. 2 Normalized Collector Current vs. Forward Current 10.0 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (mA) 1.40 1.20 1.00 0.20 0.60 0.40 1.0 IC - COLLECTOR CURRENT (mA) 1.60 Fig. 3 Normalized Collector Current vs. Temperature 1.00 0.10 0.01 VCE = 5 V D = .05" 1.0 0.1 10 100 0 IF - FORWARD CURRENT (mA) 0.6 0.4 IF = 10 mA VCE = 5 V 0.2 0 .001 0.20 0.8 10 20 30 40 -50 50 IF - FORWARD CURRENT (mA) Fig. 4 Normalized Collector Dark Current vs. Temperature -25 0 25 50 75 TA - AMBIENT TEMPERATURE (˚C) Fig. 5 Normalized Collector Current vs. Distance NORMALIZED - COLLECTOR CURRENT (mA) ID - COLLECTOR DARK CURRENT 102 VCE = 10 V 101 10 1.0 10-1 10-2 10-3 -50 -25 0 25 50 75 TA - AMBIENT TEMPERATURE (˚C) 3 of 3 1.0 .9 IF = 20 mA VCE = 5 V .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 100 REFLECTIVE SURFACE DISTANCE (mils) 100030A