QRD1113, QRD1114 Reflective Object Sensor FeaturesPACKAGE DIMENSIONS Description ■ Phototransistor Output The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The onaxis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The phototransistor responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. ■ No contact surface sensing ■ Unfocused for sensing diffused surfaces ■ Compact Package ■ Daylight filter on sensor Package Dimensions 0.083 (2.11) PIN 1 INDICATOR OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) 0.173 (4.39) 0.183 (4.65) 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) Schematic 2 3 0.100 (2.54) 1 2 3 1 4 4 0.083 (2.11) PIN 1 COLLECTOR PIN 3 ANODE PIN 2 EMITTER PIN 4 CATHODE Notes: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 www.fairchildsemi.com QRD1113, QRD1114 — Reflective Object Sensor January 2008 Symbol Parameter TOPR Operating Temperature TSTG Storage Temperature TSOL-I TSOL-F Rating Units -40 to +85 °C -40 to +100 °C Lead Temperature (Solder Iron)(2,3) 240 for 5 sec °C Lead Temperature (Solder Flow)(2,3) 260 for 10 sec °C 50 mA EMITTER IF Continuous Forward Current VR Reverse Voltage 5 V PD Power Dissipation(1) 100 mW VCEO Collector-Emitter Voltage 30 V VECO Emitter-Collector Voltage SENSOR PD Power V Dissipation(1) 100 mW Electrical/Optical Characteristics (TA = 25°C) Symbol Parameter Test Conditions Min. Typ. Max. Units 1.7 V INPUT (Emitter) VF Forward Voltage IR Reverse Leakage Current VR = 5V Peak Emission Wavelength IF = 20mA λPE IF = 20mA 100 940 µA nm OUTPUT (Sensor) BVCEO Collector-Emitter Breakdown IC = 1mA 30 V BVECO Emitter-Collector Breakdown IE = 0.1mA 5 V Dark Current VCE = 10 V, IF = 0mA QRD1113 Collector Current IF = 20mA, VCE = 5V, D = .050"(6,8) QRD1114 Collector Current .050"(6,8) ID 100 nA COUPLED IC(ON) IC(ON) VCE(SAT) IF = 20mA, VCE = 5V, D = 0.300 mA 1 mA .050"(6,8) Collector Emitter Saturation Voltage IF = 40mA, IC = 100µA, D = ICX Cross Talk IF = 20mA, VCE = 5V, EE = 0(7) tr Rise Time VCE = 5V, RL = 100Ω, IC(ON) = 5mA tf Fall Time .200 0.4 V 10 µA 10 µs 50 µs Notes: 1. Derate power dissipation linearly 1.33mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16” (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 www.fairchildsemi.com 2 QRD1113, QRD1114 — Reflective Object Sensor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Fig. 1 Forward Voltage vs. Forward Current Fig. 2 Normalized Collector Current vs. Forward Current 10.0 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (mV) 1.40 1.20 1.00 0.20 0.60 0.40 1.0 IC - COLLECTOR CURRENT (mA) 1.60 Fig. 3 Normalized Collector Current vs. Temperature 1.00 0.10 0.01 VCE = 5 V D = .05" 1.0 0.1 10 100 0 IF - FORWARD CURRENT (mA) 0.6 0.4 IF = 10 mA VCE = 5 V 0.2 0 .001 0.20 0.8 10 20 30 40 -50 50 IF - FORWARD CURRENT (mA) -25 0 25 50 75 TA - AMBIENT TEMPERATURE (˚C) Fig. 4 Normalized Collector Dark Current vs. Temperature VCE = 10 V 101 10 1.0 10-1 10-2 10-3 -50 -25 Fig. 5 Normalized Collector Current vs. Distance NORMALIZED - COLLECTOR CURRENT (mA) ID - COLLECTOR DARK CURRENT 102 0 25 50 75 1.0 .9 IF = 20 mA VCE = 5 V .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 REFLECTIVE SURFACE DISTANCE (mils) 100 TA - AMBIENT TEMPERATURE (˚C) ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 www.fairchildsemi.com 3 QRD1113, QRD1114 — Reflective Object Sensor Typical Performance Curves ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EZSWITCH™ * ™ PDP-SPM™ SyncFET™ ® Power220® ® Power247 The Power Franchise® POWEREDGE® Power-SPM™ PowerTrench® TinyBoost™ Programmable Active Droop™ TinyBuck™ ® QFET TinyLogic® QS™ TINYOPTO™ QT Optoelectronics™ TinyPower™ ® Quiet Series™ TinyPWM™ RapidConfigure™ TinyWire™ Fairchild® SMART START™ Fairchild Semiconductor® µSerDes™ ® SPM FACT Quiet Series™ UHC® STEALTH™ FACT® Ultra FRFET™ SuperFET™ FAST® UniFET™ SuperSOT™-3 FastvCore™ VCX™ ® ®* SuperSOT™-6 FlashWriter SuperSOT™-8 * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I32 ©2005 Fairchild Semiconductor Corporation QRD1113, QRD1114 Rev. 1.1.0 www.fairchildsemi.com 4 QRD1113, QRD1114 — Reflective Object Sensor TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.