QRD1113/1114 Reflective Object Sensor Features Description ■ ■ ■ ■ ■ The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Phototransistor Output PACKAGE DIMENSIONS No contact surface sensing Unfocused for sensing diffused surfaces Compact Package Daylight filter on sensor Package Dimensions 0.083 (2.11) PIN 1 INDICATOR OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) 0.173 (4.39) 0.183 (4.65) 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 1 4 0.100 (2.54) Schematic 2 3 1 4 0.083 (2.11) PIN 1 COLLECTOR PIN 3 ANODE PIN 2 EMITTER PIN 4 CATHODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. ©2005 Fairchild Semiconductor Corporation QRD1113/1114 Rev. 1.0.0 1 www.fairchildsemi.com QRD1113/1114 Reflective Object Sensor March 2005 Parameter Symbol Rating Units Operating Temperature TOPR -40 to +85 °C Storage Temperature TSTG -40 to +100 °C Lead Temperature (Solder Iron)(2,3) TSOL-I 240 for 5 sec °C Lead Temperature (Solder Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V Power Dissipation(1) PD 100 mW Collector-Emitter Voltage VCEO 30 V Emitter-Collector Voltage VECO 100 mW Emitter Sensor Power Dissipation(1) V PD Electrical / Optical Characteristics (TA = 25°C) Parameter Test Conditions Symbol Min Typ Max Units IF = 20 mA VF — — 1.7 V Input (Emitter) Forward Voltage Reverse Leakage Current Peak Emission Wavelength VR = 5 V IR — — 100 µA IF = 20 mA λPE — 940 — nm IC = 1 mA BVCEO 30 — — V Output (Sensor) Collector-Emitter Breakdown Emitter-Collector Breakdown IE = 0.1 mA BVECO 5 — — V VCE = 10 V, IF = 0 mA ID — — 100 nA QRD1113 Collector Current IF = 20 mA, VCE = 5 V, D = .050"(6, 8) IC(ON) 0.300 — — mA QRD1114 Collector Current .050"(6, 8) Dark Current Coupled IC(ON) 1 — — mA IF = 40 mA, IC = 100 µA, D = .050"(6, 8) VCE(SAT) — — 0.4 V Cross Talk IF = 20 mA, VCE = 5 V, EE = 0(7) ICX — .200 10 µA Rise Time VCE = 5V, RL = 100 Ω, IC(ON) = 5 mA tr — 10 — µs tf — 50 — µs Collector Emitter Saturation Voltage IF = 20 mA, VCE = 5 V, D = Fall Time NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16” (1.6 mm) minimum from housing. 5. As long as leads are not under any stress or spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 8. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. 2 QRD1113/1114 Rev. 1.0.0 www.fairchildsemi.com QRD1113/1114 Reflective Object Sensor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 1 Forward Voltage vs. Forward Current Fig. 2 Normalized Collector Current vs. Forward Current 10.0 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (mA) 1.40 1.20 1.00 0.20 0.60 0.40 1.0 IC - COLLECTOR CURRENT (mA) 1.60 Fig. 3 Normalized Collector Current vs. Temperature 1.00 0.10 0.01 VCE = 5 V D = .05" 1.0 0.1 10 100 0 IF - FORWARD CURRENT (mA) 0.6 0.4 IF = 10 mA VCE = 5 V 0.2 0 .001 0.20 0.8 10 20 30 40 -50 50 IF - FORWARD CURRENT (mA) -25 0 25 50 75 TA - AMBIENT TEMPERATURE (˚C) Fig. 4 Normalized Collector Dark Current vs. Temperature NORMALIZED - COLLECTOR CURRENT (mA) ID - COLLECTOR DARK CURRENT 102 VCE = 10 V 101 10 1.0 10-1 10-2 10-3 -50 -25 0 25 50 75 Fig. 5 Normalized Collector Current vs. Distance 1.0 .9 IF = 20 mA VCE = 5 V .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 REFLECTIVE SURFACE DISTANCE (mils) 100 TA - AMBIENT TEMPERATURE (˚C) 3 QRD1113/1114 Rev. 1.0.0 www.fairchildsemi.com QRD1113/1114 Reflective Object Sensor Typical Performance Curves The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QRD1113/1114 Rev. 1.0.0 www.fairchildsemi.com QRD1113/1114 Reflective Object Sensor TRADEMARKS