QRD1313 Reflective Object Sensor Features Description ■ ■ ■ ■ The QRD1313 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1313. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Photodarlington output PACKAGE DIMENSIONS Unfocused for sensing diffused surfaces Low cost plastic housing Designed for paper path and other non-contact surface sensing Package Dimensions 0.083 (2.11) PIN 1 INDICATOR OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) 0.173 (4.39) 0.183 (4.65) 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 1 4 0.100 (2.54) Schematic 0.083 (2.11) PIN 1 COLLECTOR PIN 3 ANODE PIN 2 EMITTER PIN 4 CATHODE 2 3 1 4 NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050” shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. ©2005 Fairchild Semiconductor Corporation QRD1313 Rev. 1.0.1 1 www.fairchildsemi.com QRD1313 Reflective Object Sensor March 2005 Parameter Symbol Rating Units Operating Temperature TOPR -40 to +85 °C Storage Temperature TSTG -40 to +100 °C Lead Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C Lead Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C Continuous Forward Current IF 50 mA Reverse Voltage VR 5 V Power Dissipation(1) PD 100 mW Collector-Emitter Voltage VCEO 15 V Emitter-Collector Voltage VECO 5 V PD 100 mW Emitter Sensor Power Dissipation(1) NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Soldering iron tip 1/16” (1.6 mm) minimum from housing. 4. As long as leads are not under any stress or spring tension. 5. D is the distance from the sensor face to the reflective surface. 6. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 7. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. Electrical / Optical Characteristics (TA =25°C) Parameter Test Conditions Symbol Min Typ Max Units IF = 20 mA VF — — 1.7 V VR = 2 V IR — — 100 µA Input (Emitter) Forward Voltage Reverse Leakage Current Output (Sensor) Emitter to Collector Breakdown IE = 100 µA, Ee = 0 BVECO 5 — — V Collector to Emitter Breakdown IC = 100 µA, Ee = 0 BVCEO 15 — — V VCE = 5 V, Ee = 0 ICEO — — 250 nA On-State Collector Current(5,7) IF = 20 mA, VCE = 5V, D = .050” IC(ON) 10.0 — — mA Crosstalk(8) IF = 20 mA, VCE = 5.0V, Ee = 0 ICK — — 10 µA IF = 20 mA, IC = 2 mA, D = .050” VCE(SAT) — — 1.10 V Collector to Emitter Leakage Coupled Saturation Voltage(5,7) 2 QRD1313 Rev. 1.0.1 www.fairchildsemi.com QRD1313 Reflective Object Sensor Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Fig. 2 Normalized Collector Current vs. Forward Current 1.60 1.6 1.40 1.4 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (V) Fig. 1 Forward Voltage vs. Forward Current 1.20 1.00 0.80 0.60 1.2 1.0 0.8 0.6 0.4 0.40 Vceo=5V D=0.05" 0.2 0.20 0.1 1.0 10 0.0 100 0 10 20 30 40 50 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) Fig. 3 Normalized Collector Current vs. Temperature Fig. 4 Normalized Collector Dark Current vs. Temperature ICEO - NORMALIZED DARK CURRENT IC - COLLECTOR CURRENT (mA) 1.00 0.8 0.6 0.4 0.2 IF = 10 m,A VCE = 5 V 0 -50 -25 0 25 50 104 VCE = 20 V 105 VCE = 30 V VCE = 10 V 102 Normalize VCE = 10 V IF = 0mA TA = 25°C 10 1 75 0 TA - AMBIENT TEMPERATURE (˚C) 25 50 75 100 TA - AMBIENT TEMPERATURE (˚C) Fig. 5 Normalized Collector Current vs. Distance NORMALIZED COLLECTOR CURRENT (mA) 1.0 IF = 20 m,A VCE = 5 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 250 300 350 400 450 500 DISTANCE IN MILS 3 QRD1313 Rev. 1.0.1 www.fairchildsemi.com QRD1313 Reflective Object Sensor Typical Performance Curves The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QRD1313 Rev. 1.0.1 www.fairchildsemi.com QRD1313 Reflective Object Sensor TRADEMARKS